公开(公告)号：US10580772B2

公开(公告)日：2020-03-03

申请号：US16051820

申请日：2018-08-01

申请人： Interantional Business Machines Corporation

发明人： Sami Rosenblatt ,  Rasit O. Topaloglu

IPC分类号： H01L27/088 ,  H01L21/8234 ,  H01L29/16 ,  H01L29/51 ,  H01L29/165 ,  H01L21/762 ,  H01L29/06 ,  H01L21/02 ,  H01L21/82 ,  H01L21/8238 ,  H01L21/3105

摘要： A semiconductor structure includes fins that have a 2D material, such as Graphene, upon at least the fin sidewalls. The thickness of the 2D material sidewall may be tuned to achieve desired finFET band gap control. Neighboring fins of the semiconductor structure form fin wells. The semiconductor structure may include a fin cap upon each fin and the 2D material is formed upon the sidewalls of the fin and the bottom surface of the fin wells. The semiconductor structure may include a well-plug at the bottom of the fin wells and the 2D material is formed upon the sidewalls and upper surface of the fins. The semiconductor structure may include both fin caps and well-plugs such that the 2D material is formed upon the sidewalls of the fins.