公开(公告)号：US20170186935A1

公开(公告)日：2017-06-29

申请号：US14982307

申请日：2015-12-29

Applicant: Intermolecular, Inc.

Inventor： Joseph Anthony Bonetti ,  Frank Greer ,  Wenxian Zhu

IPC: H01L39/24 ,  H01L21/285

CPC classification number: H01L39/2493 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L39/2406

Abstract: Provided are superconducting circuits and, more specifically, methods of forming such circuits. A method may involve forming a silicon-containing low loss dielectric (LLD) layer over a metal electrode such that metal carbides at the interface of the LLD layer and electrode. The LLD layer may be formed using chemical vapor deposition (CVD) at a temperature of less than about 500° C. At such a low temperature, metal silicides may not form even though silicon containing precursors may come in contact with metal of the electrode. Silicon containing precursors having silane molecules in which two silicon atoms bonded to each other (e.g., di-silane and tri-silane) may be used at these low temperatures. The LLD layer may include amorphous silicon, silicon oxide, or silicon nitride, and this layer may directly interface one or more metal electrodes. The thickness of LLD layer may be between about 1,000 Angstroms and 10,000 Angstroms.