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公开(公告)号：US11430954B2
公开(公告)日：2022-08-30
申请号：US17106286
申请日：2020-11-30
发明人： Praneet Adusumilli , Anirban Chandra , Takashi Ando , Cheng Chi , Reinaldo Vega
IPC分类号： H01L45/00
摘要： A mushroom-type Phase-Change Memory (PCM) device includes a substrate, a lower interconnect disposed in the substrate, a first dielectric layer disposed on the substrate, a bottom electrode disposed in the first dielectric layer and extending above an upper surface of the first dielectric layer, a type drift-mitigation liner encircling an upper portion of the bottom electrode extending above the upper surface of the first dielectric layer, a PCM element disposed on the liner and an upper surface of the bottom electrode, a top electrode disposed on the PCM element, and a second dielectric layer disposed on an exposed portion of the first dielectric layer and the top electrode, wherein the second dielectric layer is disposed on sidewalls of the liner, the PCM element, and the top electrode.
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公开(公告)号：US20220173312A1
公开(公告)日：2022-06-02
申请号：US17106286
申请日：2020-11-30
发明人： Praneet Adusumilli , Anirban Chandra , Takashi Ando , Cheng Chi , Reinaldo Vega
IPC分类号： H01L45/00
摘要： A mushroom-type Phase-Change Memory (PCM) device includes a substrate, a lower interconnect disposed in the substrate, a first dielectric layer disposed on the substrate, a bottom electrode disposed in the first dielectric layer and extending above an upper surface of the first dielectric layer, a type drift-mitigation liner encircling an upper portion of the bottom electrode extending above the upper surface of the first dielectric layer, a PCM element disposed on the liner and an upper surface of the bottom electrode, a top electrode disposed on the PCM element, and a second dielectric layer disposed on an exposed portion of the first dielectric layer and the top electrode, wherein the second dielectric layer is disposed on sidewalls of the liner, the PCM element, and the top electrode.
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