公开(公告)号：US20020177279A1

公开(公告)日：2002-11-28

申请号：US10205143

申请日：2002-07-24

申请人： International Business Machines Corporation

发明人： James W. Adkisson ,  Arne W. Ballantine ,  Ramachandra Divakaruni ,  Jeffrey B. Johnson ,  Erin C. Jones ,  Hon-Sum P. Wong

IPC分类号： H01L021/336

CPC分类号： H01L29/4916 ,  H01L21/82345 ,  H01L29/4238 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/66666 ,  H01L29/7827

摘要： A shorter gate length FET for very large scale integrated circuit chips is achieved by providing a wafer with multiple threshold voltages. Multiple threshold voltages are developed by combining multiple work function gate materials. The gate materials are geometrically aligned in a predetermined pattern so that each gate material is adjacent to other gate materials. A patterned linear array embodiment is developed for a multiple threshold voltage design. The method of forming a multiple threshold voltage FET requires disposing different gate materials in aligned trenches within a semiconductor wafer, wherein each gate material represents a separate work function. The gate materials are arranged to be in close proximity to one another to accommodate small gate length designs.

摘要翻译： 通过提供具有多个阈值电压的晶片来实现用于非常大规模集成电路芯片的较短栅长FET。 通过组合多个功能门极材料来开发多个阈值电压。 栅极材料以预定图案几何对准，使得每个栅极材料与其它栅极材料相邻。 开发了用于多阈值电压设计的图案化线性阵列实施例。 形成多阈值电压FET的方法需要在半导体晶片内的对准沟槽中布置不同的栅极材料，其中每个栅极材料表示单独的功函数。 栅极材料被布置成彼此靠近以适应小栅极长度设计。

公开(公告)号：US20010023949A1

公开(公告)日：2001-09-27

申请号：US09862817

申请日：2001-05-22

申请人： International Business Machines Corporation

发明人： Jeffrey B. Johnson ,  Hon-Sum P. Wong

IPC分类号： H01L027/148

CPC分类号： H01L27/14609 ,  H01L27/1463

摘要： A photosensitive device includes an array of active pixel sensor devices, each APS device being formed in an isolated cell of silicon. Each cell has an insulating barrier around it, and sits upon an insulating layer formed on an underlying substrate. A semiconductor connector making vertical contact between the pinning layer and the body of each APS device preferably replaces at least some portion of the insulating barrier adjacent to each cell. The semiconductor connector may be a single vertical connection for each cell or it may be an elongated strip connecting multiple APS devices. It may extend only to the underlying insulating layer or it may extend through the insulating layer to the substrate, with the substrate acting to interconnect and ground the pinning layer and the body of each APS device. The invention also includes the method of making the photosensitive device.

摘要翻译： 感光装置包括有源像素传感器装置的阵列，每个APS装置形成在隔离的硅电池中。 每个电池在其周围具有绝缘屏障，并且位于形成在下面的衬底上的绝缘层上。 在每个APS装置的钉扎层和主体之间进行垂直接触的半导体连接器优选地替代与每个电池相邻的绝缘屏障的至少一部分。 半导体连接器可以是每个单元的单个垂直连接，或者可以是连接多个APS器件的细长条。 它可以仅延伸到下面的绝缘层，或者它可以延伸穿过绝缘层到衬底，其中衬底用于互连和接地每个APS器件的钉扎层和主体。 本发明还包括制造感光装置的方法。