公开(公告)号：US20190245056A1

公开(公告)日：2019-08-08

申请号：US15886876

申请日：2018-02-02

申请人： International Business Machines Corporation ,  Centre National De La Recherche Scientifique ,  Ecole Centrale De Lyon

发明人： John Bruley ,  Eduard Albert Cartier ,  Catherine Dubourdieu ,  Martin Michael Frank ,  Lucie Mazet ,  Vijay Narayanan

IPC分类号： H01L29/51 ,  H01L27/088 ,  H01L29/66 ,  H01L49/02

CPC分类号： H01L29/516 ,  H01L27/088 ,  H01L28/55 ,  H01L29/6684

摘要： A circuit and method relating to a ferroelectric region free of extended grain boundaries through a thickness of ferroelectric film. The circuit includes an interlayer insulating film disposed on a semiconductor wafer; a first conductive film disposed on the interlayer insulating film; a ferroelectric film disposed on the first conductive film; a second conductive film disposed on the ferroelectric film; and a ferroelectric region patterned from the ferroelectric film, wherein the ferroelectric region is free of extended grain boundaries through a thickness of the ferroelectric film. The method includes depositing an interlayer insulating film over a semiconductor wafer; depositing a first conductive film over the interlayer insulating film; depositing a ferroelectric film over the first conductive film; depositing a second conductive film over the ferroelectric film; and forming a capacitor by patterning the first conductive film, the second conductive film, and the ferroelectric film.