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19 条记录 (耗时 0.027 秒)

    ENGINEERING MULTIPLE THRESHOLD VOLTAGES IN AN INTEGRATED CIRCUIT
    2.
    发明申请
    ENGINEERING MULTIPLE THRESHOLD VOLTAGES IN AN INTEGRATED CIRCUIT 审中-公开
    在一体化电路中工程多路阈值电压

    公开(公告)号：US20150214323A1

    公开(公告)日：2015-07-30

    申请号：US14681215

    申请日：2015-04-08

    申请人： International Business Machines Corporation ,  Centre National de la Recherche Scientifique

    发明人： Catherine Anne Dubourdieu ,  Martin Michael Frank ,  Vijay Narayanan

    IPC分类号： H01L29/51 ,  H01L27/088

    CPC分类号： H01L29/516 ,  H01L21/823412 ,  H01L21/823462 ,  H01L27/088 ,  H01L29/40111 ,  H01L29/78 ,  H01L29/7843

    摘要： An integrated circuit and method for forming an integrated circuit. There are at least three field-effect transistors with at least two of the field-effect transistors having the same electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. It is optional for the third field-effect transistor to have an electrically insulating material which is ferroelectric when unstrained or is capable of being ferroelectric when strain is induced. The at least three field-effect transistors are strained to varying amounts so that each of the three field-effect transistors has a threshold voltage, Vt, which is different from the Vt of the two other field-effect transistors.

    摘要翻译： 一种用于形成集成电路的集成电路和方法。 存在至少三个场效应晶体管，其中至少两个场效应晶体管具有相同的电绝缘材料，其在未应变时为铁电体，或者当诱发应变时能够为铁电体。 对于第三场效应晶体管来说，具有电绝缘材料是可选的，其在未应变时为铁电体，或者当诱发应变时能够是铁电体。 至少三个场效应晶体管被应变到不同的量，使得三个场效应晶体管中的每一个具有不同于另外两个场效应晶体管的Vt的阈值电压Vt。

    LIGAND SELECTION FOR TERNARY OXIDE THIN FILMS
    4.
    发明申请
    LIGAND SELECTION FOR TERNARY OXIDE THIN FILMS 有权

    公开(公告)号：US20220328302A1

    公开(公告)日：2022-10-13

    申请号：US17851100

    申请日：2022-06-28

    申请人： International Business Machines Corporation ,  ULVAC, Inc.

    发明人： Martin Michael Frank ,  John Rozen ,  Yohei Ogawa

    IPC分类号： H01L21/02 ,  H01L29/788 ,  H01L29/78 ,  H01L45/00

    摘要： Embodiments of the present invention are directed to forming a ternary compound using a modified atomic layer deposition (ALD) process. In a non-limiting embodiment of the invention, a first precursor and a second precursor are selected. The first precursor includes a first metal and a first ligand. The second precursor includes a second metal and a second ligand. The second ligand is selected based on the first ligand to target a second metal uptake. A substrate is exposed to the first precursor during a first pulse of an ALD cycle and the substrate is exposed to the second precursor during a second pulse of the ALD cycle, the second pulse occurring after the first pulse. The substrate is exposed to a third precursor (e.g., an oxidant) during a third pulse of the ALD cycle. The ternary compound can include a ternary oxide film.

    ASSIGNING DNN WEIGHTS TO A 3D CROSSBAR ARRAY
    6.
    发明公开
    ASSIGNING DNN WEIGHTS TO A 3D CROSSBAR ARRAY 审中-公开

    公开(公告)号：US20240202275A1

    公开(公告)日：2024-06-20

    申请号：US18085011

    申请日：2022-12-20

    申请人： International Business Machines Corporation

    发明人： Geoffrey Burr ,  HsinYu Tsai ,  Irem Boybat Kara ,  Martin Michael Frank

    IPC分类号： G06F12/02 ,  G06F17/16

    CPC分类号： G06F12/0207 ,  G06F17/16

    摘要： A system, method and computer program product for assigning deep neural network (DNN) weight matrices to a Compute-in-Memory (CiM) accelerator system, and particularly, efficient allocation strategies for assigning DNN model weight-layers to two-dimensional (2D) tiers of three-dimensional (3D) crossbar array tiles. Such efficient allocation strategies for assigning DNN model weight-layers to tiers and tiles of a CiM accelerator are optimized to minimize contention, latency and dead-time, and to maximize accelerator throughput. In one scenario, efficient allocation strategies include assigning DNN weight matrices to the 2D tiers of a 3D crossbar array tile to maximize throughput and minimize completion latency for a finite-batch-size example of an incoming workflow. In a further scenario, efficient allocation strategies assign DNN weight matrices to the 2D tiers of a 3D crossbar array tile to minimize dead-time-latency-before-next-batch-member-can-be-input in an infinite-batch-size or a continuous workflow scenario.

    Ligand selection for ternary oxide thin films
    7.
    发明授权
    Ligand selection for ternary oxide thin films 有权

    公开(公告)号：US11462398B2

    公开(公告)日：2022-10-04

    申请号：US16514351

    申请日：2019-07-17

    申请人： International Business Machines Corporation ,  ULVAC, Inc.

    发明人： Martin Michael Frank ,  John Rozen ,  Yohei Ogawa

    IPC分类号： H01L21/02 ,  H01L29/788 ,  H01L29/78 ,  H01L45/00

    摘要： Embodiments of the present invention are directed to forming a ternary compound using a modified atomic layer deposition (ALD) process. In a non-limiting embodiment of the invention, a first precursor and a second precursor are selected. The first precursor includes a first metal and a first ligand. The second precursor includes a second metal and a second ligand. The second ligand is selected based on the first ligand to target a second metal uptake. A substrate is exposed to the first precursor during a first pulse of an ALD cycle and the substrate is exposed to the second precursor during a second pulse of the ALD cycle, the second pulse occurring after the first pulse. The substrate is exposed to a third precursor (e.g., an oxidant) during a third pulse of the ALD cycle. The ternary compound can include a ternary oxide film.

    SUB-STOICHIOMETRIC METAL-OXIDE THIN FILMS
    8.
    发明申请
    SUB-STOICHIOMETRIC METAL-OXIDE THIN FILMS 有权

    公开(公告)号：US20210020427A1

    公开(公告)日：2021-01-21

    申请号：US16516423

    申请日：2019-07-19

    申请人： International Business Machines Corporation ,  ULVAC, Inc.

    发明人： John Rozen ,  Martin Michael Frank ,  Yohei Ogawa

    IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L45/00 ,  C23C16/40 ,  C23C16/455

    摘要： Embodiments of the present invention are directed to forming a sub-stoichiometric metal-oxide film using a modified atomic layer deposition (ALD) process. In a non-limiting embodiment of the invention, a first precursor and a second precursor are selected. The first precursor can include a metal and a first ligand. The second precursor can include the same metal and a second ligand. A substrate can be exposed to the first precursor during a first pulse of an ALD cycle. The substrate can be exposed to the second precursor during a second pulse of the ALD cycle. The second pulse can occur directly after the first pulse without an intervening thermal oxidant. The substrate can be exposed to the thermal oxidant during a third pulse of the ALD cycle.