公开(公告)号：US10941033B2

公开(公告)日：2021-03-09

申请号：US16540907

申请日：2019-08-14

Applicant: InvenSense, Inc.

Inventor： Dongyang Kang ,  Bongsang Kim ,  Bei Zhu ,  Ian Flader

IPC: B81B7/00 ,  B81C3/00 ,  B81C1/00 ,  B81B1/00

Abstract: A method includes fusion bonding a first side of a MEMS wafer to a second side of a first handle wafer. A TSV is formed from a first side of the first handle wafer to the second side of the first handle wafer and into the first MEMS wafer. A dielectric layer is formed on the first side of the first handle wafer. A tungsten via is formed in the dielectric layer. Electrodes are formed on the dielectric layer. A second MEMS wafer is eutecticly bonded with a first eutectic bond to the electrodes, wherein the TSV electrically connects the first MEMS wafer to the second MEMS wafer. Standoffs are formed on a second side of the first MEMS wafer. A CMOS wafer is eutecticly bonded with a second eutectic bond to the standoffs, wherein the second eutectic bond includes different materials than the first eutectic bond.