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公开(公告)号：US10941033B2
公开(公告)日：2021-03-09
申请号：US16540907
申请日：2019-08-14
Applicant: InvenSense, Inc.
Inventor： Dongyang Kang , Bongsang Kim , Bei Zhu , Ian Flader
Abstract: A method includes fusion bonding a first side of a MEMS wafer to a second side of a first handle wafer. A TSV is formed from a first side of the first handle wafer to the second side of the first handle wafer and into the first MEMS wafer. A dielectric layer is formed on the first side of the first handle wafer. A tungsten via is formed in the dielectric layer. Electrodes are formed on the dielectric layer. A second MEMS wafer is eutecticly bonded with a first eutectic bond to the electrodes, wherein the TSV electrically connects the first MEMS wafer to the second MEMS wafer. Standoffs are formed on a second side of the first MEMS wafer. A CMOS wafer is eutecticly bonded with a second eutectic bond to the standoffs, wherein the second eutectic bond includes different materials than the first eutectic bond.
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公开(公告)号：US20180312396A1
公开(公告)日：2018-11-01
申请号：US15497676
申请日：2017-04-26
Applicant: InvenSense, Inc.
Inventor： Daesung Lee , Jeff Chunchieh Huang , Jongwoo Shin , Bongsang Kim , Logeeswaran Veerayah Jayaraman
CPC classification number: B81B7/0038 , B81B3/0008 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81C1/00285 , B81C2203/0118
Abstract: Systems and methods are provided that provide a getter in a micromechanical system. In some embodiments, a microelectromechanical system (MEMS) is bonded to a substrate. The MEMS and the substrate have a first cavity and a second cavity therebetween. A first getter is provided on the substrate in the first cavity and integrated with an electrode. A second getter is provided in the first cavity over a passivation layer on the substrate. In some embodiments, the first cavity is a gyroscope cavity, and the second cavity is an accelerometer cavity.
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公开(公告)号：US10829367B2
公开(公告)日：2020-11-10
申请号：US16389472
申请日：2019-04-19
Applicant: InvenSense, Inc.
Inventor： Jong Il Shin , Peter Smeys , Bongsang Kim
Abstract: Provided herein is an apparatus including a cavity in a first side of a first silicon wafer, and an oxide layer on the first side and in the cavity. A first side of a second silicon wafer is bonded to the first side of the first silicon wafer. A gap control structure is on a second side of the second silicon wafer, and a MEMS structure in the second silicon wafer. A eutectic bond is bonding the second side of the second silicon wafer to a third silicon wafer. A lower cavity is between the second side of the silicon wafer and the third silicon wafer, wherein the gap control structure is outside of the lower cavity and the eutectic bond.
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公开(公告)号：US11040871B2
公开(公告)日：2021-06-22
申请号：US16206861
申请日：2018-11-30
Applicant: INVENSENSE, INC.
Inventor： Jongwoo Shin , Houri Johari-Galle , Bongsang Kim , Joseph Seeger , Dongyang Kang
Abstract: A device comprising a micro-electro-mechanical system (MEMS) substrate with protrusions of different heights that has been integrated with a complementary metal-oxide-semiconductor (CMOS) substrate is presented herein. The MEMS substrate comprises defined protrusions of respective distinct heights from a surface of the MEMS substrate, and the MEMS substrate is bonded to the CMOS substrate. In an aspect, the defined protrusions can be formed from the MEMS substrate. In another aspect, the defined protrusions can be deposited on, or attached to, the MEMS substrate. In yet another aspect, the MEMS substrate comprises monocrystalline silicon and/or polysilicon. In yet even another aspect, the defined protrusions comprise respective electrodes of sensors of the device.
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公开(公告)号：US10745270B2
公开(公告)日：2020-08-18
申请号：US16440860
申请日：2019-06-13
Applicant: InvenSense, Inc.
Inventor： Daesung Lee , Dongyang Kang , Chienlu Chang , Bongsang Kim , Alan Cuthbertson
Abstract: Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. A hardmask is deposited on a second side of the device wafer, wherein the second side is planar. The hardmask is etched to form a MEMS device pattern and a standoff pattern. Standoffs are formed on the device wafer, wherein the standoffs are defined by the standoff pattern. A eutectic bond metal is deposited on the standoffs, the device wafer, and the hardmask. A first photoresist is deposited and removed, such that the first photoresist covers the standoffs. The eutectic bond metal is etched using the first photoresist. The MEMS device pattern is etched into the device wafer. The first photoresist and the hardmask are removed.
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Patent Agency Ranking
公开(公告)号：US10692761B2
公开(公告)日：2020-06-23
申请号：US16387469
申请日：2019-04-17
Applicant: INVENSENSE, INC.
Inventor： Bongsang Kim , Joseph Seeger
IPC: B81B3/00 , H01L21/768 , H01L21/02 , H01L21/8238 , B81C1/00 , B81B7/02
Abstract: Selectively controlling application of a self-assembled monolayer (SAM) coating on a substrate of a device is presented herein. A method comprises: forming a material on a first substrate; removing a selected portion of the material from a defined contact area of the first substrate; forming a SAM coating on the material and the defined contact area—the SAM coating comprising a first adhesion force with respect to the material and a second adhesion force with respect to the defined contact area, and the first adhesion force being less than the second adhesion force; removing the SAM coating that has been formed on the material; and attaching the first substrate to the second substrate—the first substrate being positioned across from the second substrate, and the SAM coating that has been formed on the defined contact area being positioned across from a bump stop of the second substrate.
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7.发明授权公开(公告)号：US11623246B2
公开(公告)日：2023-04-11
申请号：US16269892
申请日：2019-02-07
Applicant: INVENSENSE, INC.
Inventor： Emad Mehdizadeh , Bongsang Kim , Chienliu Chang , Leonardo Baldasarre , Nikhil Apte , Xiaoyue Jiang , Mei-Lin Chan
IPC: B06B1/06 , B06B1/02 , H01L41/04 , H01L41/047 , H01L41/08 , H01L41/187 , H01L41/29 , H01L41/332 , H01L41/313 , G06V40/13
Abstract: A piezoelectric micromachined ultrasound transducer (PMUT) device may include a plurality of layers including a structural layer, a piezoelectric layer, and electrode layers located on opposite sides of the piezoelectric layer. Conductive barrier layers may be located between the piezoelectric layer and the electrodes to the prevent diffusion of the piezoelectric layer into the electrode layers.
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公开(公告)号：US10906802B2
公开(公告)日：2021-02-02
申请号：US16440816
申请日：2019-06-13
Applicant: InvenSense, Inc.
Inventor： Daesung Lee , Dongyang Kang , Chienlu Chang , Bongsang Kim , Alan Cuthbertson
Abstract: Provided herein is a method including fusion bonding a handle wafer to a first side of a device wafer. Standoffs are formed on a second side of the device wafer. A first hardmask is deposited on the second side. A second hardmask is deposited on the first hardmask. A surface of the second hardmask is planarized. A photoresist is deposited on the second hardmask, wherein the photoresist includes a MEMS device pattern. The MEMS device pattern is etched into the second hardmask. The MEMS device pattern is etched into the first hardmask, wherein the etching stops before reaching the device wafer. The photoresist and the second hardmask are removed. The MEMS device pattern is further etched into the first hardmask, wherein the further etching reaches the device wafer. The MEMS device pattern is etched into the device wafer. The first hardmask is removed.
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公开(公告)号：US11945713B2
公开(公告)日：2024-04-02
申请号：US16504999
申请日：2019-07-08
Applicant: INVENSENSE, INC.
Inventor： Daesung Lee , Jeff Chunchieh Huang , Jongwoo Shin , Bongsang Kim , Logeeswaran Veerayah Jayaraman
CPC classification number: B81B7/0038 , B81B3/0008 , B81B7/02 , B81C1/00285 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81C2203/0118
Abstract: Systems and methods are provided that provide a getter in a micromechanical system. In some embodiments, a microelectromechanical system (MEMS) is bonded to a substrate. The MEMS and the substrate have a first cavity and a second cavity therebetween. A first getter is provided on the substrate in the first cavity and integrated with an electrode. A second getter is provided in the first cavity over a passivation layer on the substrate. In some embodiments, the first cavity is a gyroscope cavity, and the second cavity is an accelerometer cavity.
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公开(公告)号：US20220348455A1
公开(公告)日：2022-11-03
申请号：US17812856
申请日：2022-07-15
Applicant: INVENSENSE, INC.
Inventor： Daesung Lee , Jeff Chunchieh Huang , Jongwoo Shin , Bongsang Kim , Logeeswaran Veerayah Jayaraman
Abstract: Systems and methods are provided that provide a getter in a micromechanical system. In some embodiments, a microelectromechanical system (MEMS) is bonded to a substrate. The MEMS and the substrate have a first cavity and a second cavity therebetween. A first getter is provided on the substrate in the first cavity and integrated with an electrode. A second getter is provided in the first cavity over a passivation layer on the substrate. In some embodiments, the first cavity is a gyroscope cavity, and the second cavity is an accelerometer cavity.
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