公开(公告)号：US20190382258A1

公开(公告)日：2019-12-19

申请号：US16366672

申请日：2019-03-27

Applicant: InvenSense, Inc.

Inventor： Daesung LEE ,  Jeff Chunchieh HUANG

IPC: B81B7/00 ,  B81C1/00

Abstract: An apparatus includes a MEMS wafer with a device layer and a handle substrate bonded to the device layer. The apparatus also includes a CMOS wafer including an oxide layer, and a passivation layer overlying the oxide layer. A bonding electrode overlies the passivation layer and a bump stop electrode overlies the passivation layer. A eutectic bond is between a first bonding metal on the bonding electrode and a second bonding metal on the MEMS wafer. A sensing electrode is positioned adjacent to the bump stop electrode and the bonding electrode. A sensing gap is positioned between the sensing electrode and the device layer, wherein the sensing gap is greater than a bump stop gap positioned between the bump stop electrode and the device layer.