公开(公告)号：US20190035905A1

公开(公告)日：2019-01-31

申请号：US16044233

申请日：2018-07-24

Applicant: InvenSense, Inc.

Inventor： Bongsang KIM ,  Jongwoo SHIN ,  Joseph SEEGER ,  Logeeswaran Veerayah JAYARAMAN ,  Houri JOHARI-GALLE

IPC: H01L29/49 ,  G01P15/097 ,  H01L23/532

Abstract: A method includes depositing a silicon layer over a first oxide layer that overlays a first silicon substrate. The method further includes depositing a second oxide layer over the silicon layer to form a composite substrate. The composite substrate is bonded to a second silicon substrate to form a micro-electro-mechanical system (MEMS) substrate. Holes within the second silicon substrate are formed by reaching the second oxide layer of the composite substrate. The method further includes removing a portion of the second oxide layer through the holes to release MEMS features. The MEMS substrate may be bonded to a CMOS substrate.