公开(公告)号：US20110001179A1

公开(公告)日：2011-01-06

申请号：US12820468

申请日：2010-06-22

申请人： Itaru YANAGI ,  Digh HISAMOTO ,  Daisuke OKADA ,  Atushi YOSHITOMI ,  Yasufumi MORIMOTO ,  Toshiyuki MINE

发明人： Itaru YANAGI ,  Digh HISAMOTO ,  Daisuke OKADA ,  Atushi YOSHITOMI ,  Yasufumi MORIMOTO ,  Toshiyuki MINE

IPC分类号： H01L27/115 ,  H01L29/788

CPC分类号： H01L29/42344 ,  G11C16/0408 ,  H01L27/11568 ,  H01L29/40117 ,  H01L29/66833 ,  H01L29/792

摘要： In a non-volatile memory in which charge is injected from a gate electrode to a charge accumulating layer, charge injection efficiency, charge retention characteristic and reliability are all improved compared with a conventional gate structure. In a nonvolatile memory which carries out write/erasure by changing the total charge amount by injecting electrons and holes into a silicon nitride film which makes up a charge accumulating layer, in order to highly efficiently carry out charge injection from a gate electrode, the gate electrode of a memory cell is made up of a two-layer film of a non-doped polysilicon layer and a metal material electrode layer.

摘要翻译： 在从栅电极向电荷累积层注入电荷的非易失性存储器中，与常规栅极结构相比，电荷注入效率，电荷保持特性和可靠性都得到改善。 在通过将电子和空穴注入构成电荷积聚层的氮化硅膜中来改变总电荷量而进行写入/擦除的非易失性存储器中，为了从栅电极高效地进行电荷注入， 存储单元的电极由非掺杂多晶硅层和金属材料电极层的两层膜构成。