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    Photovoltaic cell and method for manufacturing the same
    1.
    发明申请
    Photovoltaic cell and method for manufacturing the same 审中-公开
    光伏电池及其制造方法

    公开(公告)号：US20060000505A1

    公开(公告)日：2006-01-05

    申请号：US11138742

    申请日：2005-05-25

    申请人： Iwao Hayashi ,  Toshimitsu Muramatsu ,  Junichi Mogi ,  Hideo Kogure

    发明人： Iwao Hayashi ,  Toshimitsu Muramatsu ,  Junichi Mogi ,  Hideo Kogure

    IPC分类号： H01L31/00

    CPC分类号： H01G9/2077 ,  H01G9/2031 ,  H01G9/2059 ,  Y02E10/542 ,  Y02P70/521

    摘要： A photovoltaic cell having a transparent first substrate (61) having semiconductor electrodes (7) supporting a photosensitizing dye, a second substrate (62) having counter electrodes (4) disposed so as to face the semiconductor electrodes (7), and an electrolyte layer disposed between the semiconductor electrode (7) and the counter electrode (4); the electrolyte layer (1) being sealed by a sealing member (2) lying between the first substrate (61) and the second substrate (62); the first substrate (61), the second substrate (62) and the sealing member (2) being formed of similar materials, and the portions of the first substrate and the second substrate that are in contact with the sealing member (2) being ultrasonically welded to the sealing member. This photovoltaic cell can maintain excellent cell performance for a long time.

    摘要翻译： 一种具有透明第一基板（61）的光伏电池，具有支撑光敏染料的半导体电极（7），具有与半导体电极（7）相对配置的对置电极（4）的第二基板（62） 设置在半导体电极（7）和对置电极（4）之间; 电解质层（1）由位于第一基板（61）和第二基板（62）之间的密封构件（2）密封; 第一基板（61），第二基板（62）和密封部件（2）由相似的材料形成，并且与密封部件（2）接触的第一基板和第二基板的部分是超声波的 焊接到密封构件。 该光伏电池可以长时间保持优异的电池性能。

    Semiconductor devices having VMOS transistors and VMOS dynamic memory cells
    2.
    发明授权
    Semiconductor devices having VMOS transistors and VMOS dynamic memory cells 失效
    具有VMOS晶体管和VMOS动态存储单元的半导体器件

    公开(公告)号：US4250519A

    公开(公告)日：1981-02-10

    申请号：US71083

    申请日：1979-08-31

    申请人： Junichi Mogi ,  Kiyoshi Miyasaka

    发明人： Junichi Mogi ,  Kiyoshi Miyasaka

    IPC分类号： H01L27/10 ,  H01L21/8242 ,  H01L27/088 ,  H01L27/108 ,  H01L29/78 ,  H01L27/02 ,  H01L29/06

    CPC分类号： H01L27/088 ,  H01L27/10823

    摘要： A semiconductor device has VMOS transistors and VMOS dynamic memory cells which are formed on the same semiconductor substrate of a first conductivity type. A buried layer of the opposite conductivity type is formed between the substrate and an epitaxial layer having V-grooves for the VMOS dynamic memory cells. In the buried layer are formed buried layers of the first conductivity type serving as sources and capacitors for the VMOS dynamic memory cells.

    摘要翻译： 半导体器件具有形成在第一导电类型的相同半导体衬底上的VMOS晶体管和VMOS动态存储单元。 在基板和具有用于VMOS动态存储单元的V形槽的外延层之间形成相反导电类型的掩埋层。 在掩埋层中形成用作VMOS动态存储单元的源极和电容器的第一导电类型的掩埋层。