公开(公告)号：US20110140073A1

公开(公告)日：2011-06-16

申请号：US12915630

申请日：2010-10-29

申请人： J. Gary Eden ,  Paul Tchertchian ,  Clark J. Wagner ,  Steve Solomon ,  Robert Ginn

发明人： J. Gary Eden ,  Paul Tchertchian ,  Clark J. Wagner ,  Steve Solomon ,  Robert Ginn

IPC分类号： H01L29/66

CPC分类号： H01J11/12 ,  H01J65/046 ,  H05H1/46

摘要： Preferred embodiments of the invention provide semiconducting microcavity plasma devices. Preferred embodiments of the invention are microcavity plasma devices having at least two pn junctions, separated by a microcavity or microchannel and powered by alternate half-cycles of a time-varying voltage waveform. Alternate embodiments have a single pn junction. Microplasma is produced throughout the cavity between single or multiple pn junctions and a dielectric layer isolates the microplasma from the single or multiple pn junctions. Additional preferred embodiments are devices in which the spatial extent of the plasma itself or the n or p regions associated with a pn junction are altered by a third (control) electrode.

摘要翻译： 本发明的优选实施例提供半导体微腔等离子体装置。 本发明的优选实施例是具有至少两个pn结的微腔等离子体装置，由微腔或微通道隔开并由时变电压波形的交替半周期供电。 备选实施例具有单个pn结。 在单个或多个pn结之间的整个空腔中产生微血管，并且介电层将微血管与单个或多个pn结隔离。 附加的优选实施例是其中等离子体本身的空间范围或与pn结相关联的n或p区域被第三（控制）电极改变的装置。

公开(公告)号：US08492744B2

公开(公告)日：2013-07-23

申请号：US12915630

申请日：2010-10-29

申请人： J. Gary Eden ,  Paul Tchertchian ,  Clark J. Wagner ,  Steve Solomon ,  Robert Ginn

发明人： J. Gary Eden ,  Paul Tchertchian ,  Clark J. Wagner ,  Steve Solomon ,  Robert Ginn

IPC分类号： H01L29/12

CPC分类号： H01J11/12 ,  H01J65/046 ,  H05H1/46

摘要： Preferred embodiments of the invention provide semiconducting microcavity plasma devices. Preferred embodiments of the invention are microcavity plasma devices having at least two pn junctions, separated by a microcavity or microchannel and powered by alternate half-cycles of a time-varying voltage waveform. Alternate embodiments have a single pn junction. Microplasma is produced throughout the cavity between single or multiple pn junctions and a dielectric layer isolates the microplasma from the single or multiple pn junctions. Additional preferred embodiments are devices in which the spatial extent of the plasma itself or the n or p regions associated with a pn junction are altered by a third (control) electrode.

摘要翻译： 本发明的优选实施例提供半导体微腔等离子体装置。 本发明的优选实施例是具有至少两个pn结的微腔等离子体装置，由微腔或微通道隔开并由时变电压波形的交替半周期供电。 备选实施例具有单个pn结。 在单个或多个pn结之间的整个空腔中产生微血管，并且介电层将微血管与单个或多个pn结隔离。 附加的优选实施例是其中等离子体本身的空间范围或与pn结相关联的n或p区域被第三（控制）电极改变的装置。

公开(公告)号：US20080090319A1

公开(公告)日：2008-04-17

申请号：US11582937

申请日：2006-10-17

申请人： Robert Ginn ,  Kenneth Gerber ,  Andreas Hampp ,  Alexander Childs

发明人： Robert Ginn ,  Kenneth Gerber ,  Andreas Hampp ,  Alexander Childs

IPC分类号： H01L21/00

CPC分类号： H01L27/14683 ,  H01L27/144 ,  H01L27/1469 ,  H01L31/0304 ,  H01L31/184

摘要： InSb infrared photodiodes and sensor arrays with improved passivation layers and methods for making same are disclosed. In the method, a passivation layer of AlInSb is deposited on an n-type InSb substrate using molecular beam epitaxy before photodiode detector regions are formed in the n-type substrate. Then, a suitable P+ dopant is implanted directly through the AlInSb passivation layer to form photodiode detector regions. Next, the AlInSb passivation layer is selectively removed, exposing first regions of the InSb substrate, and gate contacts are formed in the first regions of the InSb substrate. Then, additional portions of the AlInSb passivation layer are selectively removed above the photodiode detectors exposing second regions. Next, metal contacts are formed in the second regions, and bump contacts are formed atop the metal contacts. Then, an antireflection coating is applied to a side of the substrate opposite from the side having the metal and bump contacts. Forming the AlInSb passivation layer before the photodiode detector regions reduces the number of defects created in the n-type InSb substrate during fabrication in comparison to conventional methods and improves the noise performance of InSb photodiodes and sensor arrays incorporating the improved passivation layer.

摘要翻译： 公开了具有改进的钝化层的InSb红外光电二极管和传感器阵列及其制造方法。 在该方法中，在n型衬底中形成光电二极管检测器区域之前，使用分子束外延，在n型InSb衬底上沉积钝化层AlInSb。 然后，通过AlInSb钝化层直接注入合适的P +掺杂剂，以形成光电二极管检测器区域。 接下来，选择性地去除AlInSb钝化层，暴露InSb衬底的第一区域，并且在InSb衬底的第一区域中形成栅极接触。 然后，在暴露第二区域的光电二极管检测器上方选择性地去除AlInSb钝化层的附加部分。 接下来，在第二区域中形成金属触点，并且在金属触点顶部形成凸点触点。 然后，将抗反射涂层施加到与具有金属和凸块接触的一侧相对的基板的一侧。 与传统方法相比，在光电二极管检测器区域之前形成AlInSb钝化层减少了在制造期间在n型InSb衬底中产生的缺陷的数量，并且改善了纳入改进的钝化层的InSb光电二极管和传感器阵列的噪声性能。