SEMICONDUCTING MICROCAVITY AND MICROCHANNEL PLASMA DEVICES
    1.
    发明申请
    SEMICONDUCTING MICROCAVITY AND MICROCHANNEL PLASMA DEVICES 有权
    SEMICONDUCING MICROCAVITY和MICROCHANNEL PLASMA DEVICES

    公开(公告)号:US20110140073A1

    公开(公告)日:2011-06-16

    申请号:US12915630

    申请日:2010-10-29

    IPC分类号: H01L29/66

    CPC分类号: H01J11/12 H01J65/046 H05H1/46

    摘要: Preferred embodiments of the invention provide semiconducting microcavity plasma devices. Preferred embodiments of the invention are microcavity plasma devices having at least two pn junctions, separated by a microcavity or microchannel and powered by alternate half-cycles of a time-varying voltage waveform. Alternate embodiments have a single pn junction. Microplasma is produced throughout the cavity between single or multiple pn junctions and a dielectric layer isolates the microplasma from the single or multiple pn junctions. Additional preferred embodiments are devices in which the spatial extent of the plasma itself or the n or p regions associated with a pn junction are altered by a third (control) electrode.

    摘要翻译: 本发明的优选实施例提供半导体微腔等离子体装置。 本发明的优选实施例是具有至少两个pn结的微腔等离子体装置,由微腔或微通道隔开并由时变电压波形的交替半周期供电。 备选实施例具有单个pn结。 在单个或多个pn结之间的整个空腔中产生微血管,并且介电层将微血管与单个或多个pn结隔离。 附加的优选实施例是其中等离子体本身的空间范围或与pn结相关联的n或p区域被第三(控制)电极改变的装置。

    Semiconducting microcavity and microchannel plasma devices
    2.
    发明授权
    Semiconducting microcavity and microchannel plasma devices 有权
    半导体微腔和微通道等离子体器件

    公开(公告)号:US08492744B2

    公开(公告)日:2013-07-23

    申请号:US12915630

    申请日:2010-10-29

    IPC分类号: H01L29/12

    CPC分类号: H01J11/12 H01J65/046 H05H1/46

    摘要: Preferred embodiments of the invention provide semiconducting microcavity plasma devices. Preferred embodiments of the invention are microcavity plasma devices having at least two pn junctions, separated by a microcavity or microchannel and powered by alternate half-cycles of a time-varying voltage waveform. Alternate embodiments have a single pn junction. Microplasma is produced throughout the cavity between single or multiple pn junctions and a dielectric layer isolates the microplasma from the single or multiple pn junctions. Additional preferred embodiments are devices in which the spatial extent of the plasma itself or the n or p regions associated with a pn junction are altered by a third (control) electrode.

    摘要翻译: 本发明的优选实施例提供半导体微腔等离子体装置。 本发明的优选实施例是具有至少两个pn结的微腔等离子体装置,由微腔或微通道隔开并由时变电压波形的交替半周期供电。 备选实施例具有单个pn结。 在单个或多个pn结之间的整个空腔中产生微血管,并且介电层将微血管与单个或多个pn结隔离。 附加的优选实施例是其中等离子体本身的空间范围或与pn结相关联的n或p区域被第三(控制)电极改变的装置。