公开(公告)号：US20230387137A1

公开(公告)日：2023-11-30

申请号：US18233414

申请日：2023-08-14

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Hideo HOSONO ,  Junghwan Kim ,  Hideya Kumomi

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/127 ,  H10K59/1201

Abstract: In an embodiment, a thin film transistor is formed on a substrate, the thin film transistor includes a channel formed by at least part of a metal oxide semiconductor layer containing at least indium (In), a gate electrode, a gate insulating layer arranged between the channel and the gate electrode, a source electrode connected to the metal oxide semiconductor layer, and a drain electrode connected to the metal oxide semiconductor layer. For example, the average concentration of carbon atoms in an area from a surface to the depth of 5 nm of the channel is 1.5×1021 cm−3 or less, whereby a threshold shift due to a voltage stress can be effectively reduced.