公开(公告)号：US20110260287A1

公开(公告)日：2011-10-27

申请号：US13091264

申请日：2011-04-21

Applicant: JIAN-HSING LEE

Inventor： JIAN-HSING LEE

IPC: H01L23/525

CPC classification number: H01L23/5256 ,  H01L23/62 ,  H01L27/0288 ,  H01L29/0847 ,  H01L29/41758 ,  H01L29/7835 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: An ultra-high voltage device has a high voltage path established from a high voltage N-well through a first metal layer to a second metal layer, and a contact plug electrically connected between the high voltage N-well and the first metal layer. The contact plug has a distributed structure on a horizontal layout to improve the uniformity of the ultra-high voltage device such that the current in the high voltage path will be more uniform distributed so as to avoid the localized heat concentration caused by non-uniform current distribution that would damage the ultra-high voltage device. Multiple fuse apparatus are preferably connected to the first metal layer individually. Each the fuse apparatus includes a poly fuse to be burnt down when an over-load current flows therethrough.

Abstract translation: 超高压装置具有从高压N阱穿过第一金属层到第二金属层建立的高电压路径，以及电连接在高压N阱和第一金属层之间的接触插塞。 接触塞在水平布局上具有分布式结构，以提高超高压装置的均匀性，使得高压路径中的电流将更均匀地分布，以避免由不均匀电流引起的局部热集中 分配会损坏超高压设备。 多个保险丝装置优选地分别连接到第一金属层。 每个保险丝装置包括多个熔断器，当过载电流流过其中时，该熔断器被烧毁。