公开(公告)号：US20220060258A1

公开(公告)日：2022-02-24

申请号：US17421144

申请日：2020-01-08

Applicant: JOLED INC.

Inventor： Atsushi SASAKI

IPC: H04B10/116

Abstract: The optical communication system includes a transmitter including a display panel which has a curved surface and is capable of emitting light, and a transmission controller which causes the display panel to emit light representing an information signal; and a receiver including an image sensor which receives the light emitted from the display panel, and a reception controller which extracts the information signal from the light received by the image sensor. The display panel may be a transparent display panel which allows background light to pass through.

公开(公告)号：US20170294610A1

公开(公告)日：2017-10-12

申请号：US15484163

申请日：2017-04-11

Applicant: JOLED INC.

Inventor： Atsushi SASAKI

IPC: H01L51/00 ,  H01L27/32

CPC classification number: H01L51/0097 ,  H01L27/3211 ,  H01L27/3276 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

Abstract: In an organic electroluminescence (EL) display panel including: a substrate that is flexible and is made of a resin material; a plurality of light-emitting elements that are disposed on the substrate and are spaced away from one another; and a plurality of wire units that are disposed on the substrate and establish electrical connection between the plurality of light-emitting elements, a first region of the substrate that is below the light-emitting elements has greater stiffness than a second region of the substrate that is a remainder of the substrate.

公开(公告)号：US20200227665A1

公开(公告)日：2020-07-16

申请号：US16734787

申请日：2020-01-06

Applicant: JOLED INC.

Inventor： Atsushi SASAKI

IPC: H01L51/50 ,  H01L51/52 ,  H01L51/00

Abstract: A luminescent panel includes an upper sealing layer, a lower sealing layer, and an organic electroluminescent layer. The organic electroluminescent layer is provided between the upper sealing layer and the lower sealing layer and includes one or a plurality of organic electroluminescent elements. At least one of the upper sealing layer or the lower sealing layer includes one or a plurality of inorganic sealing films each provided with a plurality of fracture control parts. The fracture control parts each include an inorganic material having relatively lower mechanical strength than parts of the one or plurality of inorganic sealing films other than the fracture control parts.

公开(公告)号：US20220320346A1

公开(公告)日：2022-10-06

申请号：US17657066

申请日：2022-03-29

Applicant: JOLED INC.

Inventor： Atsushi SASAKI

IPC: H01L29/786 ,  H01L29/66 ,  B05D1/26

Abstract: A semiconductor device includes a conductive resin layer that includes an insulating resin and first fillers dispersed in the insulating resin and has first and second main surfaces, and an element layer that is arranged on the first main surface and includes a semiconductor element. The first fillers are each a fibrous conductive filler. The conductive resin layer has a first surface layer section that includes the first main surface and has a thickness which is 30% of a thickness of the conductive resin layer, a second surface layer section that includes the second main surface and has a thickness which is 30% of the thickness of the conductive resin layer, and an intermediate layer section arranged between the first and second surface layer sections. First fillers have a smaller directional angle relative to the first main surface in the first surface layer section than in the intermediate layer section.

公开(公告)号：US20160300954A1

公开(公告)日：2016-10-13

申请号：US15100384

申请日：2014-08-26

Applicant: JOLED INC.

Inventor： Atsushi SASAKI

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L21/02164 ,  H01L21/02252 ,  H01L21/32105 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A manufacturing method for a thin-film transistor includes: forming an oxide semiconductor film above a substrate; forming a silicon film on the oxide semiconductor film; and performing plasma oxidation on the silicon film to (i) form an oxidized silicon film and (ii) supply oxygen to the oxide semiconductor film.

Abstract translation: 薄膜晶体管的制造方法包括：在衬底上形成氧化物半导体膜; 在氧化物半导体膜上形成硅膜; 并在硅膜上进行等离子体氧化，以（i）形成氧化硅膜，和（ii）向氧化物半导体膜供给氧。