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1.发明授权公开(公告)号：US09935165B2
公开(公告)日：2018-04-03
申请号：US15207047
申请日：2016-07-11
Applicant: JOLED INC.
Inventor： Yuichiro Ishiyama , Yuichi Kato , Tomoatsu Kinoshita , Takashige Fujimori , Kenta Masuda , Keiichi Akamatsu
CPC classification number: H01L27/3272 , H01L27/3262 , H01L27/3276 , H01L51/0097 , H01L51/56 , H01L2227/323 , H01L2251/5338
Abstract: There is provided a semiconductor device that includes a substrate, an electric field shielding layer, and a semiconductor element. The electric field shielding layer is provided on the substrate. The semiconductor element includes an electrode, and is provided on the electric field shielding layer with an insulating film in between.
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2.发明申请SEMICONDUCTOR DEVICE, DISPLAY UNIT, METHOD OF MANUFACTURING DISPLAY UNIT, AND ELECTRONIC APPARATUS 有权半导体器件，显示单元，制造显示单元的方法和电子设备公开(公告)号：US20170062541A1
公开(公告)日：2017-03-02
申请号：US15207047
申请日：2016-07-11
Applicant: JOLED INC.
Inventor： Yuichiro Ishiyama , Yuichi Kato , Tomoatsu Kinoshita , Takashige Fujimori , Kenta Masuda , Keiichi Akamatsu
CPC classification number: H01L27/3272 , H01L27/3262 , H01L27/3276 , H01L51/0097 , H01L51/56 , H01L2227/323 , H01L2251/5338
Abstract: There is provided a semiconductor device that includes a substrate, an electric field shielding layer, and a semiconductor element. The electric field shielding layer is provided on the substrate. The semiconductor element includes an electrode, and is provided on the electric field shielding layer with an insulating film in between.
Abstract translation: 提供了一种包括基板，电场屏蔽层和半导体元件的半导体器件。 电场屏蔽层设置在基板上。 半导体元件包括电极，并且在电场屏蔽层之间设置有绝缘膜。
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3.发明授权公开(公告)号：US10283579B2
公开(公告)日：2019-05-07
申请号：US15880990
申请日：2018-01-26
Applicant: JOLED INC.
Inventor： Yuichiro Ishiyama , Yuichi Kato , Tomoatsu Kinoshita , Takashige Fujimori , Kenta Masuda , Keiichi Akamatsu
Abstract: There is provided a semiconductor device that includes a substrate, an electric field shielding layer, and a semiconductor element. The electric field shielding layer is provided on the substrate. The semiconductor element includes an electrode, and is provided on the electric field shielding layer with an insulating film in between.
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4.发明申请公开(公告)号：US20180151659A1
公开(公告)日：2018-05-31
申请号：US15880990
申请日：2018-01-26
Applicant: JOLED INC.
Inventor： Yuichiro Ishiyama , Yuichi Kato , Tomoatsu Kinoshita , Takashige Fujimori , Kenta Masuda , Keiichi Akamatsu
CPC classification number: H01L27/3272 , H01L27/3262 , H01L27/3276 , H01L51/0097 , H01L51/56 , H01L2227/323 , H01L2251/5338
Abstract: There is provided a semiconductor device that includes a substrate, an electric field shielding layer, and a semiconductor element. The electric field shielding layer is provided on the substrate. The semiconductor element includes an electrode, and is provided on the electric field shielding layer with an insulating film in between.
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