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公开(公告)号：US10957722B2
公开(公告)日：2021-03-23
申请号：US15603406
申请日：2017-05-23
Applicant: JOLED INC.
Inventor： Tomoatsu Kinoshita , Takashige Fujimori , Yuichi Kato
IPC: H01L27/12 , H01L27/32 , H01L51/00 , B23K26/067 , B23K26/53 , B23K26/06 , B23K26/12 , B23K26/082 , B23K103/00 , B23K103/16 , B23K101/40
Abstract: A method of manufacturing a flexible device includes joining a first surface of a support substrate to a back surface of a flexible substrate, the first surface being opposite to a second surface of the support substrate; forming an element layer on a front surface of the flexible substrate; and performing multidirectional oblique irradiation of an interface and its vicinity between the support substrate and the flexible substrate with laser light from the second surface of the support substrate to detach the support substrate from the flexible substrate.
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2.发明授权公开(公告)号：US10916729B2
公开(公告)日：2021-02-09
申请号：US16521699
申请日：2019-07-25
Applicant: JOLED INC.
Inventor： Takashige Fujimori , Yuichiro Ishiyama
Abstract: A light-emitting display device includes an element-formation substrate and a plurality of pixels. The element-formation substrate includes a first barrier film and a second barrier film provided on a substrate, the first barrier film and the second barrier film being provided in the stated order from the substrate and suppressing ingress of moisture. The plurality of pixels is provided on the element-formation substrate. The element-formation substrate further includes an organic part that fills a crack occurred in the first barrier film, or that is attached around a part of a metallic foreign substance protruding from the first barrier film.
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Patent Agency Ranking
3.发明授权公开(公告)号：US10283579B2
公开(公告)日：2019-05-07
申请号：US15880990
申请日：2018-01-26
Applicant: JOLED INC.
Inventor： Yuichiro Ishiyama , Yuichi Kato , Tomoatsu Kinoshita , Takashige Fujimori , Kenta Masuda , Keiichi Akamatsu
Abstract: There is provided a semiconductor device that includes a substrate, an electric field shielding layer, and a semiconductor element. The electric field shielding layer is provided on the substrate. The semiconductor element includes an electrode, and is provided on the electric field shielding layer with an insulating film in between.
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4.发明申请公开(公告)号：US20180151659A1
公开(公告)日：2018-05-31
申请号：US15880990
申请日：2018-01-26
Applicant: JOLED INC.
Inventor： Yuichiro Ishiyama , Yuichi Kato , Tomoatsu Kinoshita , Takashige Fujimori , Kenta Masuda , Keiichi Akamatsu
CPC classification number: H01L27/3272 , H01L27/3262 , H01L27/3276 , H01L51/0097 , H01L51/56 , H01L2227/323 , H01L2251/5338
Abstract: There is provided a semiconductor device that includes a substrate, an electric field shielding layer, and a semiconductor element. The electric field shielding layer is provided on the substrate. The semiconductor element includes an electrode, and is provided on the electric field shielding layer with an insulating film in between.
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5.发明授权公开(公告)号：US09935165B2
公开(公告)日：2018-04-03
申请号：US15207047
申请日：2016-07-11
Applicant: JOLED INC.
Inventor： Yuichiro Ishiyama , Yuichi Kato , Tomoatsu Kinoshita , Takashige Fujimori , Kenta Masuda , Keiichi Akamatsu
CPC classification number: H01L27/3272 , H01L27/3262 , H01L27/3276 , H01L51/0097 , H01L51/56 , H01L2227/323 , H01L2251/5338
Abstract: There is provided a semiconductor device that includes a substrate, an electric field shielding layer, and a semiconductor element. The electric field shielding layer is provided on the substrate. The semiconductor element includes an electrode, and is provided on the electric field shielding layer with an insulating film in between.
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6.发明申请SEMICONDUCTOR DEVICE, DISPLAY UNIT, METHOD OF MANUFACTURING DISPLAY UNIT, AND ELECTRONIC APPARATUS 有权半导体器件，显示单元，制造显示单元的方法和电子设备公开(公告)号：US20170062541A1
公开(公告)日：2017-03-02
申请号：US15207047
申请日：2016-07-11
Applicant: JOLED INC.
Inventor： Yuichiro Ishiyama , Yuichi Kato , Tomoatsu Kinoshita , Takashige Fujimori , Kenta Masuda , Keiichi Akamatsu
CPC classification number: H01L27/3272 , H01L27/3262 , H01L27/3276 , H01L51/0097 , H01L51/56 , H01L2227/323 , H01L2251/5338
Abstract: There is provided a semiconductor device that includes a substrate, an electric field shielding layer, and a semiconductor element. The electric field shielding layer is provided on the substrate. The semiconductor element includes an electrode, and is provided on the electric field shielding layer with an insulating film in between.
Abstract translation: 提供了一种包括基板，电场屏蔽层和半导体元件的半导体器件。 电场屏蔽层设置在基板上。 半导体元件包括电极，并且在电场屏蔽层之间设置有绝缘膜。
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公开(公告)号：US09178072B2
公开(公告)日：2015-11-03
申请号：US13665487
申请日：2012-10-31
Applicant: JOLED INC.
Inventor： Narihiro Morosawa , Takashige Fujimori
IPC: H01L29/10 , H01L29/786 , H01L29/417 , H01L29/45 , H01L27/12 , H01L27/32
CPC classification number: H01L29/7869 , H01L27/1225 , H01L27/3262 , H01L29/41733 , H01L29/45 , H01L29/78606
Abstract: Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective film formed at least in a region corresponding to the channel region on the oxide semiconductor layer; and a source/drain electrode. A top face and a side face of the oxide semiconductor layer are covered with the source/drain electrode and the channel protective layer on the gate insulating film.
Abstract translation: 提供了能够提高包括氧化物半导体层的薄膜晶体管的可靠性的薄膜晶体管。 一种薄膜晶体管，包括：栅电极; 形成在栅电极上的栅极绝缘膜; 形成与所述栅极绝缘膜上的所述栅电极对应的沟道区域的氧化物半导体层; 至少形成在与氧化物半导体层上的沟道区对应的区域中的沟道保护膜; 和源/漏电极。 氧化物半导体层的顶面和侧面被栅极绝缘膜上的源极/漏极电极和沟道保护层覆盖。
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