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    SEMICONDUCTOR DEVICE AND DISPLAY UNIT
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND DISPLAY UNIT 审中-公开

    公开(公告)号：US20190273101A1

    公开(公告)日：2019-09-05

    申请号：US16289659

    申请日：2019-03-01

    Applicant: JOLED INC.

    Inventor： Tomoatsu Kinoshita

    IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

    Abstract: A semiconductor device includes a substrate, a transistor, an electrically-conductive film, and a voltage applying section. The substrate includes a resin material and has a first surface and a second surface opposite to each other. The transistor is provided on the first surface of the substrate, and includes a semiconductor layer and paired source-drain electrodes. The source-drain electrodes are electrically coupled to the semiconductor layer, and are configured to receive a source potential and a drain potential, respectively. The electrically-conductive film is provided on the second surface of the substrate. The voltage applying section is configured to supply the electrically-conductive film with any of a potential equal to the source potential, a potential equal to the drain potential, and a potential between the source potential and the drain potential.

    Active matrix substrate method of manufacturing active matrix substrate, and display device
    5.
    发明授权
    Active matrix substrate method of manufacturing active matrix substrate, and display device 有权

    公开(公告)号：US10551704B2

    公开(公告)日：2020-02-04

    申请号：US15615834

    申请日：2017-06-07

    Applicant: JOLED INC.

    Inventor： Eri Matsuo ,  Tomoatsu Kinoshita ,  Motohiro Toyota ,  Yasunobu Hiromasu

    IPC: G02F1/1362 ,  H01L23/00 ,  H01L27/12

    Abstract: Provided is an active matrix substrate that includes a substrate, a thin film transistor, an electrode layer, and a second insulating film. The thin film transistor is provided on the substrate and includes an oxide semiconductor layer, a gate electrode, and source and drain electrodes. The oxide semiconductor layer includes a first region as a channel region. The electrode layer is level with the gate electrode, is provided in a different region from the thin film transistor, and includes a first end. The second insulating film is provided between the substrate and the electrode layer and includes a second end at a more retreated position than the first end of the electrode layer. The oxide semiconductor layer further includes a second region having lower resistance than the first region. The electrode layer is electrically coupled, at the first end, to the second region of the oxide semiconductor layer.

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