公开(公告)号：US11189735B2

公开(公告)日：2021-11-30

申请号：US16736813

申请日：2020-01-08

Applicant: JOLED INC.

Inventor： Hiroshi Hayashi ,  Naoki Asano ,  Ryo Koshiishi

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L29/12

Abstract: A semiconductor device includes a gate electrode, a semiconductor film, and a conductive film. The semiconductor film includes an oxide semiconductor material. The semiconductor film includes a channel region, a low-resistance region, and an intermediate region. The channel region is opposed to the gate electrode. The low-resistance region has a lower electric resistance than the channel region. The intermediate region is provided between the low-resistance region and the channel region. The conductive film is provided selectively in contact with the low-resistance region of the semiconductor film.

公开(公告)号：US10249761B2

公开(公告)日：2019-04-02

申请号：US15800604

申请日：2017-11-01

Applicant: JOLED INC.

Inventor： Toshiaki Yoshitani ,  Hiroshi Hayashi ,  Ryo Koshiishi

IPC: H01L29/786 ,  H01L27/32

Abstract: A thin-film transistor (TFT) substrate is provided which includes: a substrate; a TFT disposed above the substrate; and a capacitor disposed above the substrate and electrically connected with the TFT, wherein the capacitor includes: a lower electrode layer disposed above the substrate and including an electrically conductive material as a main component; an upper electrode layer disposed above and opposed to the lower electrode layer and including, as a main component, an oxide semiconductor material to which electrical conductivity is given; and a capacitor insulating layer disposed between the lower electrode layer and the upper electrode layer. An extension extending outward from at least a portion of the outer edge of the lower electrode layer in plan view is provided to the lower electrode layer. In plan view, the upper electrode layer covers the lower electrode layer except the extension.