X-ray inspection of bumps on a semiconductor substrate

    公开(公告)号:US09390984B2

    公开(公告)日:2016-07-12

    申请号:US13647408

    申请日:2012-10-09

    CPC classification number: H01L22/12

    Abstract: A method for inspection includes irradiating, with a focused beam, a feature formed on a semiconductor wafer, the feature including a volume containing a first material and a cap made of a second material, different from the first material, that is formed over the volume. One or more detectors positioned at different angles relative to the feature are used to detect X-ray fluorescent photons that are emitted by the first material in response to the irradiating beam and pass through the cap before striking the detectors. Signals output by the one or more detectors at the different angles in response to the detected photons are processed in order to assess a quality of the cap.

    X-ray inspection of bumps on a semiconductor substrate
    2.
    发明申请
    X-ray inspection of bumps on a semiconductor substrate 有权
    在半导体衬底上的凸块的X射线检查

    公开(公告)号:US20130089178A1

    公开(公告)日:2013-04-11

    申请号:US13647408

    申请日:2012-10-09

    CPC classification number: H01L22/12

    Abstract: A method for inspection includes irradiating, with a focused beam, a feature formed on a semiconductor wafer, the feature including a volume containing a first material and a cap made of a second material, different from the first material, that is formed over the volume. One or more detectors positioned at different angles relative to the feature are used to detect X-ray fluorescent photons that are emitted by the first material in response to the irradiating beam and pass through the cap before striking the detectors. Signals output by the one or more detectors at the different angles in response to the detected photons are processed in order to assess a quality of the cap.

    Abstract translation: 一种用于检查的方法包括用聚焦光束照射形成在半导体晶片上的特征,所述特征包括容纳第一材料的体积和与所述第一材料不同的第二材料制成的帽,所述第二材料形成在所述体积 。 使用相对于特征以不同角度定位的一个或多个检测器来检测由第一材料响应于照射束而发射的X射线荧光光子,并在撞击检测器之前穿过盖。 处理由响应于检测到的光子以不同角度输出的一个或多个检测器的信号,以便评估盖的质量。

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