公开(公告)号：US09389192B2

公开(公告)日：2016-07-12

申请号：US14222635

申请日：2014-03-23

Applicant: Jordan Valley Semiconductors Ltd.

Inventor： Alex Tokar ,  Alex Dikopoltsev ,  Isaac Mazor ,  Matthew Wormington

IPC: G01N23/223

CPC classification number: G01N23/223 ,  G01N2223/076

Abstract: A method for inspection includes capturing an optical image of one or more features on a surface of a sample and irradiating an area of the sample containing at least one of the features with an X-ray beam. An intensity of X-ray fluorescence emitted from the sample in response to the irradiating X-ray beam is measured. The optical image is processed so as to extract geometrical parameters of the at least one of the features and to compute a correction factor responsively to the geometrical parameters. The correction factor is applied to the measured intensity in order to derive a property of the at least one of the features.

Abstract translation: 检查方法包括：在样品的表面上捕获一个或多个特征的光学图像，并用X射线束照射含有至少一个特征的样品的区域。 测量响应于照射X射线束从样品发射的X射线荧光的强度。 处理光学图像以便提取至少一个特征的几何参数并且计算响应于几何参数的校正因子。 校正因子被应用于测量的强度，以便导出至少一个特征的属性。

公开(公告)号：US20150330921A1

公开(公告)日：2015-11-19

申请号：US14708323

申请日：2015-05-11

Applicant: JORDAN VALLEY SEMICONDUCTORS LTD.

Inventor： Isaac Mazor ,  Fouad Atrash ,  Alex Tokar ,  Olga Ostrovsky

IPC: G01N23/223

CPC classification number: G01N23/2076 ,  G01N23/223 ,  G01N2223/6116 ,  H01L22/12

Abstract: A method for X-ray Fluorescence (XRF) analysis includes directing an X-ray beam onto a sample and measuring an XRF signal excited from the sample, in a reference measurement in which the sample includes one or more first layers formed on a substrate, and in a target measurement after one or more second layers are formed on the substrate in addition to the first layers, so as to produce a reference XRF spectrum and a target XRF spectrum, respectively. A contribution of the first layers to the target XRF spectrum is reduced using the reference XRF spectrum. A parameter of at least one of the second layers is estimated using the target XRF spectrum in which the contribution of the first layers has been reduced.

Abstract translation: 用于X射线荧光（XRF）分析的方法包括将X射线束引导到样品上并测量从样品激发的XRF信号，其中参考测量中样品包括形成在基底上的一个或多个第一层， 并且在除了第一层之外在基板上形成一个或多个第二层之后的目标测量中，以分别产生参考XRF光谱和目标XRF光谱。 使用参考XRF谱减少第一层对目标XRF谱的贡献。 使用其中第一层的贡献已经减小的目标XRF光谱来估计第二层中的至少一个的参数。

公开(公告)号：US09829448B2

公开(公告)日：2017-11-28

申请号：US14922220

申请日：2015-10-26

Applicant: JORDAN VALLEY SEMICONDUCTORS LTD.

Inventor： Matthew Wormington ,  Isaac Mazor ,  Alex Tokar ,  Alex Dikopoltsev

IPC: G01N23/223 ,  G01B15/02

CPC classification number: G01N23/223 ,  G01B15/02 ,  G01N2223/303

Abstract: A method for X-ray measurement includes, in a calibration phase, scanning a first X-ray beam, having a first beam profile, across a feature of interest on a calibration sample and measuring first X-ray fluorescence (XRF) emitted from the feature and from background areas of the calibration sample surrounding the feature. Responsively to the first XRF and the first beam profile, a relative emission factor is computed. In a test phase, a second X-ray beam, having a second beam profile, different from the first beam profile, is directed to impinge on the feature of interest on a test sample and second XRF emitted from the test sample is measured in response to the second X-ray beam. A property of the feature of interest on the test sample is computed by applying the relative emission factor together with the second beam profile to the measured second XRF.

公开(公告)号：US20160123909A1

公开(公告)日：2016-05-05

申请号：US14922220

申请日：2015-10-26

Applicant: JORDAN VALLEY SEMICONDUCTORS LTD.

Inventor： Matthew Wormington ,  Isaac Mazor ,  Alex Tokar ,  Alex Dikopoltsev

IPC: G01N23/223 ,  G01B15/02

CPC classification number: G01N23/223 ,  G01B15/02 ,  G01N2223/303

Abstract: A method for X-ray measurement includes, in a calibration phase, scanning a first X-ray beam, having a first beam profile, across a feature of interest on a calibration sample and measuring first X-ray fluorescence (XRF) emitted from the feature and from background areas of the calibration sample surrounding the feature. Responsively to the first XRF and the first beam profile, a relative emission factor is computed. In a test phase, a second X-ray beam, having a second beam profile, different from the first beam profile, is directed to impinge on the feature of interest on a test sample and second XRF emitted from the test sample is measured in response to the second X-ray beam. A property of the feature of interest on the test sample is computed by applying the relative emission factor together with the second beam profile to the measured second XRF.

Abstract translation: 一种用于X射线测量的方法包括：在校准阶段，扫描具有第一光束轮廓的第一X射线束跨越校准样本上的感兴趣特征，并测量从第二射线谱发射的第一X射线荧光（XRF） 特征和来自该特征周围的校准样本的背景区域。 响应于第一XRF和第一光束轮廓，计算相对排放因子。 在测试阶段，具有不同于第一光束轮廓的第二光束轮廓的第二X射线束被引导以撞击测试样本上的感兴趣特征，并且响应地测量从测试样品发射的第二X射线 到第二个X射线束。 通过将相对放射因子与第二光束轮廓应用于测量的第二XRF来计算测试样品上的感兴趣特征的特性。

公开(公告)号：US09390984B2

公开(公告)日：2016-07-12

申请号：US13647408

申请日：2012-10-09

Applicant: JORDAN VALLEY SEMICONDUCTORS LTD.

Inventor： Isaac Mazor ,  Alex Tokar ,  Boris Yokhin ,  Matthew Wormington

IPC: H01L21/44 ,  H01L21/66

CPC classification number: H01L22/12

Abstract: A method for inspection includes irradiating, with a focused beam, a feature formed on a semiconductor wafer, the feature including a volume containing a first material and a cap made of a second material, different from the first material, that is formed over the volume. One or more detectors positioned at different angles relative to the feature are used to detect X-ray fluorescent photons that are emitted by the first material in response to the irradiating beam and pass through the cap before striking the detectors. Signals output by the one or more detectors at the different angles in response to the detected photons are processed in order to assess a quality of the cap.

公开(公告)号：US20130089178A1

公开(公告)日：2013-04-11

申请号：US13647408

申请日：2012-10-09

Applicant: Jordan Valley Semiconductors Ltd.

Inventor： Isaac Mazor ,  Alex Tokar ,  Boris Yokhin ,  Matthew Wormington

IPC: G01N23/223

CPC classification number: H01L22/12

Abstract: A method for inspection includes irradiating, with a focused beam, a feature formed on a semiconductor wafer, the feature including a volume containing a first material and a cap made of a second material, different from the first material, that is formed over the volume. One or more detectors positioned at different angles relative to the feature are used to detect X-ray fluorescent photons that are emitted by the first material in response to the irradiating beam and pass through the cap before striking the detectors. Signals output by the one or more detectors at the different angles in response to the detected photons are processed in order to assess a quality of the cap.

Abstract translation: 一种用于检查的方法包括用聚焦光束照射形成在半导体晶片上的特征，所述特征包括容纳第一材料的体积和与所述第一材料不同的第二材料制成的帽，所述第二材料形成在所述体积 。 使用相对于特征以不同角度定位的一个或多个检测器来检测由第一材料响应于照射束而发射的X射线荧光光子，并在撞击检测器之前穿过盖。 处理由响应于检测到的光子以不同角度输出的一个或多个检测器的信号，以便评估盖的质量。

公开(公告)号：US09632043B2

公开(公告)日：2017-04-25

申请号：US14708323

申请日：2015-05-11

Applicant: JORDAN VALLEY SEMICONDUCTORS LTD.

Inventor： Isaac Mazor ,  Fouad Atrash ,  Alex Tokar ,  Olga Ostrovsky

IPC: G01N23/00 ,  G01N23/207 ,  G01N23/223 ,  H01L21/66

CPC classification number: G01N23/2076 ,  G01N23/223 ,  G01N2223/6116 ,  H01L22/12

Abstract: A method for X-ray Fluorescence (XRF) analysis includes directing an X-ray beam onto a sample and measuring an XRF signal excited from the sample, in a reference measurement in which the sample includes one or more first layers formed on a substrate, and in a target measurement after one or more second layers are formed on the substrate in addition to the first layers, so as to produce a reference XRF spectrum and a target XRF spectrum, respectively. A contribution of the first layers to the target XRF spectrum is reduced using the reference XRF spectrum. A parameter of at least one of the second layers is estimated using the target XRF spectrum in which the contribution of the first layers has been reduced.

公开(公告)号：US20140286473A1

公开(公告)日：2014-09-25

申请号：US14222635

申请日：2014-03-23

Applicant: JORDAN VALLEY SEMICONDUCTORS LTD.

Inventor： Alex Tokar ,  Alex Dikopoltsev ,  Isaac Mazor ,  Matthew Wormington

IPC: G01N23/223

CPC classification number: G01N23/223 ,  G01N2223/076

Abstract: A method for inspection includes capturing an optical image of one or more features on a surface of a sample and irradiating an area of the sample containing at least one of the features with an X-ray beam. An intensity of X-ray fluorescence emitted from the sample in response to the irradiating X-ray beam is measured. The optical image is processed so as to extract geometrical parameters of the at least one of the features and to compute a correction factor responsively to the geometrical parameters. The correction factor is applied to the measured intensity in order to derive a property of the at least one of the features.

Abstract translation: 检查方法包括：在样品的表面上捕获一个或多个特征的光学图像，并用X射线束照射含有至少一个特征的样品的区域。 测量响应于照射X射线束从样品发射的X射线荧光的强度。 处理光学图像以便提取至少一个特征的几何参数并且计算响应于几何参数的校正因子。 校正因子被应用于测量的强度，以便导出至少一个特征的属性。