公开(公告)号：US20200333707A1

公开(公告)日：2020-10-22

申请号：US16853857

申请日：2020-04-21

Applicant: JSR CORPORATION

Inventor： Miki Tamada ,  Sousuke Oosawa ,  Ken Maruyama

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

Abstract: A resist pattern-forming method includes applying a radiation-sensitive composition directly or indirectly on a substrate to form a resist film. The resist film is exposed to an extreme ultraviolet ray or an electron beam. The resist film is developed after the exposing. The radiation-sensitive composition includes a first complex, a compound and a second complex. The first complex includes a metal atom and a first ligand coordinating to the metal atom. The compound gives a second ligand that differs from the first ligand. The second complex includes the metal atom and the second ligand coordinating to the metal atom.

公开(公告)号：US10564546B2

公开(公告)日：2020-02-18

申请号：US15592373

申请日：2017-05-11

Applicant: JSR CORPORATION

Inventor： Tomohiko Sakurai ,  Sousuke Oosawa ,  Hiromitsu Nakashima ,  Kousuke Terayama

IPC: G03F7/11 ,  G03F7/20

Abstract: A resist pattern-forming method includes applying a photoresist composition directly or indirectly on a front face of a substrate to form a photoresist film. A topcoat layer is laminated directly or indirectly on a front face of the photoresist film. The photoresist film is subjected to liquid immersion lithography in a presence of a liquid immersion liquid on a front face of the topcoat layer. Part of the topcoat layer is removed after subjecting the photoresist film to the liquid immersion lithography. The photoresist film is developed after the part of the topcoat layer is removed.