公开(公告)号：US20240184203A1

公开(公告)日：2024-06-06

申请号：US18422098

申请日：2024-01-25

Applicant: JSR CORPORATION

Inventor： Yuki OZAKI ,  Ryuichi SERIZAWA ,  Kengo HIRASAWA ,  Hiroki HIRABAYASHI

IPC: G03F7/039 ,  G03F7/00 ,  G03F7/004 ,  G03F7/038

CPC classification number: G03F7/0392 ,  G03F7/0035 ,  G03F7/0047 ,  G03F7/0048 ,  G03F7/0382

Abstract: A composition includes a metal compound, a polymer including a first structural unit represented by formula (1) and a second structural unit represented by formula (2), and a solvent. R1 is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; and R2 is a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms. R3 is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; L is a single bond or a divalent linking group; Ar is a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring having 6 to 20 ring members; R4 is a monovalent hydroxyalkyl group having 1 to 10 carbon atoms or a hydroxy group; and n is an integer of 0 to 8.

公开(公告)号：US20240369931A1

公开(公告)日：2024-11-07

申请号：US18769554

申请日：2024-07-11

Applicant: JSR CORPORATION

Inventor： Yuki OZAKI ,  Hiroki HIRABAYASHI ,  Kengo HIRASAWA ,  Ryuichi SERIZAWA

IPC: G03F7/11 ,  C11D7/26 ,  C11D7/50 ,  G03F7/004

Abstract: A method for manufacturing a semiconductor substrate, includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; cleaning a periphery of the substrate with a cleaning liquid; and after cleaning the periphery, forming a resist pattern directly or indirectly on the resist underlayer film. The composition for forming a resist underlayer film includes: a metal compound; and a solvent. The cleaning liquid includes an organic acid.