摘要:
An ink jet channel wafer for an ink jet printer has a first surface in which a plurality of anisotropically etched ink channels and an anisotropically etched ink reservoir are directly connected to one another. The ink jet channel wafer is etched using an admixture of at least one alkali metal hydroxide and at least one alcohol compound.
摘要:
A method of fabricating ink jet printheads from channel plates with a low stress integral ink inlet filters and heater plates. The channel plates are obtained from p-type (100) silicon wafers, one surface of which has a lightly doped n-type patterned layer in the form of a screen. In the preferred embodiment, a first etch resistant material is deposited on both surfaces of the wafer and patterned on the surface of wafer opposite the one containing the n-type layer. The patterned first etch resistant material provides a first etch mask with channel and reservoir vias. A second etch resistant material is deposited over the first etch resistant material and patterned on the same wafer surface as the first etch resistant material in order to provide a second etch mask having reservoir vias smaller than the reservoir vias in the first etch mask, but aligned therewithin. The wafer with the two patterned etch masks is placed into an anisotropic etch bath and etched with a bias potential between the p-n junction formed by the patterned n-type layer and the p-type wafer and an electrode also in the etch bath. The patterned, lightly doped, n-type layer functions as an etch stop when under a bias potential, and because the doping level of the n-type layer is low, the internal stress is also low. When the reservoir recesses have been etched through the wafer leaving the patterned n-type layer covering the open bottom, the second etch resistant material is removed and the wafer replaced into the anisotropic etch bath to etch the channel recesses and complete the reservoir recesses with a similar bias potential. The first etch resistant material is removed and the channel wafer is aligned and bonded to a heater wafer. The bonded wafer pair is separated into a plurality of printheads having an integral inlet filter devoid of internal stress.
摘要:
In an ink-jet printhead, channels in which liquid ink is nucleated by a heating element defines five sides in cross-section. One of the sides is created by the main surface of a heater chip which includes the heating element, while the other four sides, forming a truncated parallelogram or diamond-shape, are defined in a channel plate abutting the heater chip. The four-sided channel in the channel plate is created by a combined process of plasma etching and wet etching.
摘要:
A liquid ink printing apparatus printing images includes a printhead having a plurality of nozzles wherein a single power pulse causes two or more nozzles to eject ink simultaneously. The printhead includes an ink directing element having a plurality of ink conduits coupled to an array of spaced nozzles and a transducer element aligned with and mated to the ink directing element. The transducers are spaced a distance apart and each transducer is substantially aligned with at least two or more of the nozzles. The printhead is stepped in a direction transverse to the array of spaced nozzles a stepping distance approximately equal to or less than the distance between transducers. The ink directing element includes a silicon wafer having etched ink conduits or channels holding ink for ejection through the nozzles connected thereto. Each transducer is cooperatively associated with one channel having a fork member coupled to two or more nozzles or is cooperatively associated with two or more channels wherein each channel is connected to one or more nozzles.
摘要:
An integral filter is fabricated by patterning a layer of etch resistant material on one side of a (100) silicon wafer to produce an array of equally spaced, uniformly sized posts or shapes and doping the exposed surface of the wafer by boron ion implant. The dopant is diffused into the wafer while the array of posts of etch resistant material masks the diffusion under them. The size of the posts or shapes determines the undoped areas of the wafer and, thus, the mesh size of the eventually produced integral filter. The wafer is recoated with a layer of etch resistant material and the other side, which was not doped, is patterned to form a plurality of sets of elongated channel vias and reservoir vias, one reservoir via for each set of channel vias. The wafer is orientation dependently etched for a predetermined time period to produce the sets of channel grooves and reservoir recesses, the recesses having a depth of about 75-85% of the wafer thickness, followed by etching of the wafer in an EDP etchant to finish etching the reservoirs through the wafer. The doped silicon area is not etched, so that an integral filter is produced having an arbitrary pore size determined by the size of the posts or shapes patterned initially prior to the diffused doping step.
摘要:
A thermal ink jet printhead is improved by a specific heating element structure and method of manufacture. The heating elements each have a resistive layer, a high temperature deposited plasma or pyrolytic silicon nitride thereover of predetermined thickness to electrically isolate a subsequently formed cavitational stress protecting layer of tantalum thereon. The pyrolytic silicon nitride permits wet chemical or dry plasma etching delineation of the tantalum without deleterious impact on the silicon nitride, while the delineated tantalum can serve as mask for the wet etch delineation of the silicon nitride. Because of the high deposition temperatures, the aluminum electrodes are patterned and passivated last. Such a construction lowers the manufacturing cost and concurrently provides a more durable printhead.
摘要:
In an ink-jet printhead, the individual channels for ejecting ink onto a print medium are orientation dependently etched along the (111) planes perpendicular to the (110) surface orientation of a single crystal silicon wafer. The silicon wafer is bonded on a glass substrate to act as both a support and an etch stop in the etching process. The orientation of the channels within the silicon layer facilitates channels which are rectangular in cross section.
摘要:
Three dimensional silicon structures are fabricated from (100) silicon wafers by a single side, two-step anisotropic etching process using different etchants. The two etch masks are formed one on top of the other on a single side of the wafer prior to the initiation of the two-step etching process, with the mask for the largest and deepest etched recesses formed last and used first. The last formed mask is removed to expose the first formed mask. The anisotropic etchant for the smaller, closer toleranced recesses is chosen to minimize mask etching and improve dimensional control of etched recesses requiring close tolerances and uniform sizes.
摘要:
An ink jet printhead having an integral silicon filter over the printhead ink inlet is disclosed. The filter is produced by orientation dependent etching during printhead fabrication. The individual printheads are obtained by a sectioning operation which cuts aligned and bonded channel and heater wafers into a plurality of printheads. The channel wafer is orientation dependent etched from one side of a (100) silicon wafer through a patterned etch resistant mask layer to produce the plurality of reservoir recesses, each having a predetermined depth and floor thickness, and a plurailty of sets of parallel ink channel grooves, one set of channel grooves for each reservoir recess. The etch resistant mask layer on both sides of the channel wafer are removed and a second etch resistant mask layer is deposited thereon. The second mask layer on the side opposite the one with the channel grooves and reservoir recesses are patterned to produce a plurality of patterns of filter pore vias in alignment with the bottoms of the reservoir recesses. The printhead filters are produced by a second orientation dependent etching step of the channel wafer and prior to bonding to the heater wafer.
摘要:
A fabrication process for wafer derived elements such as channel plates for thermal ink jet printers includes formation of a final etchant pattern in first and second masking layers. The second masking layer is a protective layer to prevent removal of the first layer upon removal of a subsequent third masking layer. Preferably, the second masking layer is an oxide applied under low temperature condition to lessen the possibility of inducing formation of oxygen precipitates in the wafer. A third masking layer is formed over the final etchant pattern formed by the first and second masking layers. The third masking layer is patterned to form a precursor structure of a large structure contained in the final etchant pattern. After formation of the precursor structure, the third masking layer is removed and the wafer is subjected to a final etching exposure to form the final etched structures. The process is useful for forming channel plates for thermal ink jet printheads.