公开(公告)号：US06531656B1

公开(公告)日：2003-03-11

申请号：US09913675

申请日：2001-08-17

申请人： James N. Grote ,  Thomas A. Stein ,  Thomas L. Ricks ,  Jay E. Fullenkamp ,  Donald E. Blanford ,  Reinhard Starost ,  Bruce W. Smith

发明人： James N. Grote ,  Thomas A. Stein ,  Thomas L. Ricks ,  Jay E. Fullenkamp ,  Donald E. Blanford ,  Reinhard Starost ,  Bruce W. Smith

IPC分类号： H02G304

CPC分类号： H02G3/0493 ,  F16L39/00

摘要： An alignment apparatus (28) is provided for use with a supply column (16) including an outer shell (22), a mount (12) configured to couple the outer shell (22) to a ceiling (14), and a plurality of supply lines (24) positioned within the outer shell (22). The supply lines (24) are configured to be coupled to at least one of an electrical supply and a gas supply. The alignment apparatus (28) includes a body member (30) configured to be positioned on the outer shell (22) of the supply column (16), and a plurality of ports (34, 36) formed in the body member (30). The ports (34, 36) are configured to support the supply lines (24) in a predetermined pattern.

摘要翻译： 提供了一种与包括外壳（22）的供应柱（16）一起使用的对准装置（28），被配置为将外壳（22）连接到天花板（14）的安装件（12） 位于外壳（22）内的供应管线（24）。 供应管线（24）被配置为联接到电源和气体供应中的至少一个。 对准装置（28）包括构造成位于供给塔（16）的外壳（22）上的主体构件（30）和形成在主体构件（30）中的多个端口（34,36） 。 端口（34,36）被构造成以预定图案支撑供应管线（24）。

公开(公告)号：USRE40239E1

公开(公告)日：2008-04-15

申请号：US10964295

申请日：2004-10-14

申请人： Bruce W. Smith

发明人： Bruce W. Smith

IPC分类号： G03B27/72 ,  G03B27/54 ,  G03B27/32

CPC分类号： G03F7/70091 ,  G03B27/54 ,  G03F1/26 ,  G03F7/70216

摘要： An illumination system for a microlithographic stepper has a light source that emits light of selected wavelength(s) along an optical path toward a photomask. An aperture mask is positioned in the path of the illumination light and between the light source and the photomask. The aperture mask has a dithered pattern of pixels. The intensity of the pattern controls the illumination of the photomask. The masking aperture pattern defines one or more zones of illumination. Each zone has elements that are patterned in accordance with a selected wavelength of incident light to diffract the incident light into an illumination pattern for illuminating a photomask. Each of the elements is constructed with a matrix of pixels. In the preferred embodiment the array of pixels is 8×8. The number of elements is generally greater than 3×3.

摘要翻译： 用于微光刻步进器的照明系统具有沿着光路朝向光掩模发射选定波长的光的光源。 孔径掩模位于照明光的路径中以及光源和光掩模之间。 孔径掩模具有抖动的像素图案。 图案的强度控制光掩模的照明。 掩蔽孔径图案限定一个或多个照明区域。 每个区域具有根据入射光的选定波长被图案化的元件，以将入射光衍射成用于照射光掩模的照明图案。 每个元素由像素矩阵构成。 在优选实施例中，像素阵列为8×8。 元素的数量通常大于3x3。

公开(公告)号：US06791667B2

公开(公告)日：2004-09-14

申请号：US10092483

申请日：2002-03-08

申请人： Bruce W. Smith

发明人： Bruce W. Smith

IPC分类号： G03B2772

CPC分类号： G03F7/70091 ,  G03B27/54 ,  G03F1/26 ,  G03F7/70216

摘要： A masking aperture for a photomask illumination system provides controlled on-axis and off-axis illumination. The masking aperture has a dithered pattern of pixels. The intensity of the pattern controls the illumination of the photomask. The masking aperture pattern defines one or more zones of illumination. Zones comprise elements that are patterned in accordance with a selected wavelength of incident light to diffract the incident light into an illumination pattern for illuminating a photomask. Each of the elements is constructed with a matrix of pixels. In the preferred embodiment the array of pixels is 8×8. The number of elements is generally greater than 3×3.

公开(公告)号：US06556361B1

公开(公告)日：2003-04-29

申请号：US09528272

申请日：2000-03-17

申请人： Bruce W. Smith ,  John S. Petersen

发明人： Bruce W. Smith ,  John S. Petersen

IPC分类号： G02B908

CPC分类号： G03F7/70058 ,  G03F7/70091 ,  G03F7/70425

摘要： A imaging tool for use with a mask with features oriented along at least an x-axis or a y-axis where the x-axis extends in directions substantially perpendicular to the directions of the y-axis. The tool has a condenser lens with a condenser plate which is located in a condenser lens pupil plane and which has a condenser aperture with four-sides. The sides of the condenser aperture are oriented in substantially the same direction as either the x-axis or the y-axis. The condenser lens is positioned to place at least a portion of any illumination on at least a portion of the mask.

摘要翻译： 一种用于与面罩一起使用的成像工具，其特征是至少沿x轴或y轴定向，其中x轴沿基本上垂直于y轴方向的方向延伸。 该工具具有聚光透镜，其具有位于聚光透镜光瞳平面中并且具有四面的聚光器孔的聚光板。 冷凝器孔的侧面被定向在与x轴或y轴基本相同的方向上。 聚光透镜被定位成将任何照明的至少一部分放置在掩模的至少一部分上。

公开(公告)号：US06541750B1

公开(公告)日：2003-04-01

申请号：US09527640

申请日：2000-03-17

申请人： Bruce W. Smith

发明人： Bruce W. Smith

IPC分类号： H01L2700

CPC分类号： G03F7/70091 ,  G03F7/70441

摘要： A imaging tool for use with a mask with features oriented along at least an x-axis or a y-axis where the x-axis extends in directions substantially perpendicular to the directions of the y-axis. The tool has a condenser lens and an objective lens. The condenser lens has a condenser aperture with four-sides and four comers that are located in a condenser lens pupil plane. The sides of the condenser aperture are oriented in substantially the same direction as either the x-axis or the y-axis. The condenser lens is positioned to place at least a portion of any illumination on the mask and then into an objective lens pupil plane of the objective lens. At least one of the comers of the condenser aperture in the condenser plate may have a substantially rounded shape. Additionally, the mask may have at least one artifact added to at least one comer of the features for optical proximity correction.

摘要翻译： 一种用于与面罩一起使用的成像工具，其特征是至少沿x轴或y轴定向，其中x轴沿基本上垂直于y轴方向的方向延伸。 该工具具有聚光透镜和物镜。 聚光透镜具有位于聚光透镜光瞳平面中的四边和四角的聚光器孔。 冷凝器孔的侧面被定向在与x轴或y轴基本相同的方向上。 聚光透镜被定位成将任何照明的至少一部分放置在掩模上，然后进入物镜的物镜光瞳平面。 冷凝器板中的冷凝器孔的至少一个角可以具有基本圆形的形状。 此外，掩模可以具有添加到用于光学邻近校正的特征的至少一个角的至少一个伪影。

公开(公告)号：US08852850B2

公开(公告)日：2014-10-07

申请号：US11049796

申请日：2005-02-03

申请人： Bruce W. Smith

发明人： Bruce W. Smith

IPC分类号： G03F7/00 ,  G03B27/42 ,  G03F7/20

CPC分类号： G03F7/2041 ,  G03B27/42 ,  G03F7/70341

摘要： A photolithographic exposure system for use on a photoresist on a substrate includes an illumination system, a photomask with one or more object patterns, a projection optical exposure system, and a fluid dispensing system. The projection optical exposure system is positioned to project an image of the one or more object patterns toward an image plane. The fluid dispensing system positions a fluid between the projection optical exposure system and the photoresist on the substrate. The fluid has a refractive index value above a refractive index value of water and an absorbance below 0.8 per millimeter at wavelengths between about 180 nm and about 300 nm.

摘要翻译： 用于基板上的光致抗蚀剂的光刻曝光系统包括照明系统，具有一个或多个目标图案的光掩模，投影光学曝光系统和流体分配系统。 投影光学曝光系统被定位成将一个或多个目标图案的图像投影到图像平面。 流体分配系统将投影光学曝光系统和基板上的光致抗蚀剂之间的流体定位。 流体具有高于水的折射率值的折射率值，并且在约180nm至约300nm之间的波长处的吸光度低于0.8每毫米。

公开(公告)号：US07345735B2

公开(公告)日：2008-03-18

申请号：US11527911

申请日：2006-09-27

申请人： Bruce W. Smith

发明人： Bruce W. Smith

IPC分类号： G03B27/68 ,  G03B27/52 ,  G03B27/42

CPC分类号： G01M11/0264 ,  G03F7/706

摘要： Aberrations in an optical system can be detected and measured using a method comprised of a test target in the object plane of a projection system and imaging a photoresist film with the system. The test target comprises at least one open figure which comprises a multiple component array of phase zones, where the multiple zones are arranged within the open figure so that their response to lens aberration is interrelated and the zones respond uniquely to specific aberrations depending on their location within the figure. This is a unique and new method of detecting a variety of aberration types including coma, spherical, astigmatism, and three-point through the exposure of a photoresist material placed in the image plane of the system and the evaluation of these images.

摘要翻译： 光学系统中的像差可以使用由投影系统的物平面中的测试对象组成的方法并利用该系统对光致抗蚀剂膜进行成像来检测和测量。 测试目标包括至少一个开放图形，其包括相位区域的多分量阵列，其中多个区域布置在开放图形内，使得它们对透镜像差的响应是相互关联的，并且该区域根据其位置独特地响应特定像差 在图中。 这是一种独特和新的方法，通过放置在系统的图像平面中的光致抗蚀剂材料的曝光和这些图像的评估来检测各种像差类型，包括彗差，球面，散光和三点。

公开(公告)号：US07233887B2

公开(公告)日：2007-06-19

申请号：US10348031

申请日：2003-01-21

申请人： Bruce W. Smith

发明人： Bruce W. Smith

IPC分类号： G06F17/10

CPC分类号： G03F1/36

摘要： A method of level assist feature OPC layout is described using frequency model-based approach. Through low-pass spatial frequency filtering of a mask function, the local influence of zero diffraction energy can be determined. By determining isofocal intensity threshold requirements of an imaging process, a mask equalizing function can be designed. This provides the basis for frequency model-based assist feature layout. By choosing assist feature parameters that meet the requirements of the equalizing function, through-pitch focus and dose matching is possible for large two dimensional mask fields. The concepts introduced also lead to additional assist feature options and design flexibility.

摘要翻译： 使用基于频率模型的方法描述了级别辅助功能OPC布局的方法。 通过掩模函数的低通空间频率滤波，可以确定零衍射能的局部影响。 通过确定成像过程的等效强度阈值要求，可以设计掩模均衡功能。 这为基于频率模型的辅助功能布局提供了基础。 通过选择满足均衡功能要求的辅助特征参数，可以对大二维掩模场进行贯穿间距焦点和剂量匹配。 引入的概念还可以提供额外的辅助功能选项和设计灵活性。

公开(公告)号：US06395433B1

公开(公告)日：2002-05-28

申请号：US09415149

申请日：1999-10-08

申请人： Bruce W. Smith

发明人： Bruce W. Smith

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/46

摘要： An attenuated phase shift mask for use in a lithography process includes a masking film made of at least one material with at least a silicon component which provides a transmission above about 0.5 percent and a phase shift of about a 180° for radiation at a wavelength at or below about 160 nm.

摘要翻译： 用于光刻工艺的衰减相移掩模包括由至少一种材料制成的掩模膜，该至少一种材料具有至少一种硅成分，其提供高于约0.5％的透射率，并且在波长为 或低于约160nm。

公开(公告)号：US06309780B1

公开(公告)日：2001-10-30

申请号：US09333316

申请日：1999-06-15

申请人： Bruce W. Smith

发明人： Bruce W. Smith

IPC分类号： G03F900

CPC分类号： G03F1/32

摘要： The attenuated phase shift mask in accordance with one embodiment of the present invention for use in lithography at or below 0.20 &mgr;m and for use at wavelengths below 300 nm includes a substrate with a layer deposited on the substrate. The layer comprises a group IV, V or VI transitional metal nitride and silicon nitride SixNy. The attenuated phase shift mask has a thickness between about 500 angstroms and 2000 angstroms, where the group IV, V or VI transitional metal nitride comprises about ten to forty percent of the layer.

摘要翻译： 根据本发明的一个实施例的衰减相移掩模用于在或低于0.20μm的光刻并且用于波长低于300nm的光刻包括具有沉积在衬底上的层的衬底。 该层包括IV，V或VI族过渡金属氮化物和氮化硅SixNy。 衰减的相移掩模具有在约500埃至2000埃之间的厚度，其中IV，V或VI族过渡金属氮化物占该层的约10％至40％。