公开(公告)号：US06812545B2

公开(公告)日：2004-11-02

申请号：US10425270

申请日：2003-04-29

申请人： James Stuart Dunn ,  David L. Harame ,  Jeffrey Bowman Johnson ,  Robb Allen Johnson ,  Louis DeWolf Lanzerotti ,  Stephen Arthur St. Onge

发明人： James Stuart Dunn ,  David L. Harame ,  Jeffrey Bowman Johnson ,  Robb Allen Johnson ,  Louis DeWolf Lanzerotti ,  Stephen Arthur St. Onge

IPC分类号： H01L27082

CPC分类号： H01L29/66287 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

摘要： An epitaxial base bipolar transistor comprising an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on the semiconductor surface; a raised extrinsic base on the surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrinsic base, wherein said insulator is a spacer; and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in said single crystal substrate, wherein said emitter diffusion has an emitter diffusion junction depth, and wherein said emitter extends to said substrate surface and said base extends to said substrate surface, wherein said emitter to base surface height difference is less than 20% of said emitter junction depth is provided as well as methods for fabricating the same.

摘要翻译： 一种外延基极双极晶体管，包括在单晶单个衬底上的外延单晶层; 半导体表面上的凸起的发射极; 在半导体衬底的表面上凸起的非本征基底; 凸起的发射极和凸出的外部基极之间的绝缘体，其中所述绝缘体是间隔物; 以及来自凸起的发射极和凸出的外部基极的扩散，以在所述单晶衬底中提供发射极扩散和非本征基极扩散，其中所述发射极扩散具有发射极扩散结深度，并且其中所述发射极延伸到所述衬底表面， 所述基底延伸到所述衬底表面，其中所述发射极与基底表面的高度差小于所述发射极结深度的20％以及其制造方法。

公开(公告)号：US06617220B2

公开(公告)日：2003-09-09

申请号：US09810856

申请日：2001-03-16

申请人： James Stuart Dunn ,  David L. Harame ,  Jeffrey Bowman Johnson ,  Robb Allen Johnson ,  Louis DeWolf Lanzerotti ,  Stephen Arthur St. Onge

发明人： James Stuart Dunn ,  David L. Harame ,  Jeffrey Bowman Johnson ,  Robb Allen Johnson ,  Louis DeWolf Lanzerotti ,  Stephen Arthur St. Onge

IPC分类号： H01L21331

CPC分类号： H01L29/66287 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

摘要： An epitaxial base bipolar transistor including an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on a portion of the single crystal layer; a raised extrinsic base on a surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrinsic base, wherein the insulator is a spacer; and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in the single crystal layer, wherein the emitter diffusion has an emitter diffusion junction depth.

摘要翻译： 一种外延基极双极晶体管，包括在单晶单基片上的外延单晶层; 在单晶层的一部分上的凸起的发射体; 在半导体衬底的表面上的凸起的非本征基底; 所述凸起发射极和所述凸出的外部基极之间的绝缘体，其中所述绝缘体是间隔物; 以及从凸起的发射极和凸出的外部基极的扩散，以在单晶层中提供发射极扩散和非本征的基极扩散，其中发射极扩散具有发射极扩散结深度。