公开(公告)号：US07923750B2

公开(公告)日：2011-04-12

申请号：US12139524

申请日：2008-06-16

申请人： James William Adkisson ,  Rajendran Krishnasamy ,  John Joseph Ellis-Monaghan ,  Solomon Mulugeta ,  Charles Francis Musante ,  Richard J. Rassel

发明人： James William Adkisson ,  Rajendran Krishnasamy ,  John Joseph Ellis-Monaghan ,  Solomon Mulugeta ,  Charles Francis Musante ,  Richard J. Rassel

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L31/00 ,  H01L29/74 ,  H01L31/111

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14612

摘要： A pixel sensor cell, a method for fabricating or operating the pixel sensor cell and a design structure for fabricating the pixel sensor cell each include a semiconductor substrate that includes a photoactive region separated from a floating diffusion region by a channel region. At least one gate dielectric is located upon the semiconductor substrate at least in-part interposed between the photoactive region and the floating diffusion region, and at least one optically transparent gate is located upon the gate dielectric and at least in-part over the channel region. Preferably, the at least one gate dielectric is also located over the photoactive region and the at least one optically transparent gate is also located at least in-part over the photoactive region, to provide enhanced charge transfer capabilities within the pixel sensor cell, which is typically a CMOS pixel sensor cell.

摘要翻译： 像素传感器单元，用于制造或操作像素传感器单元的方法和用于制造像素传感器单元的设计结构各自包括半导体衬底，其包括通过沟道区域与浮动扩散区域分离的光活性区域。 至少一个栅极介质至少部分地位于半导体衬底之间，介于光活性区域和浮动扩散区域之间，并且至少一个光学透明栅极位于栅极电介质上并且至少部分地位于沟道区域上 。 优选地，至少一个栅极电介质也位于光活性区域之上，并且至少一个光学透明栅极也至少部分地位于光活性区域上，以在像素传感器单元内提供增强的电荷转移能力，其是 通常是CMOS像素传感器单元。

公开(公告)号：US20090311822A1

公开(公告)日：2009-12-17

申请号：US12139523

申请日：2008-06-16

申请人： James William Adkisson ,  Rajendran Krishnasamy ,  John Joseph Ellis-Monaghan ,  Solomon Mulugeta ,  Charles Francis Musante ,  Richard J. Rassel

发明人： James William Adkisson ,  Rajendran Krishnasamy ,  John Joseph Ellis-Monaghan ,  Solomon Mulugeta ,  Charles Francis Musante ,  Richard J. Rassel

IPC分类号： H01L21/00

CPC分类号： H01L27/14614 ,  H01L27/14643 ,  H01L27/14689

摘要： A pixel sensor cell, a method for fabricating or operating the pixel sensor cell and a design structure for fabricating the pixel sensor cell each include a semiconductor substrate that includes a photoactive region separated from a floating diffusion region by a channel region. At least one gate dielectric is located upon the semiconductor substrate at least in-part interposed between the photoactive region and the floating diffusion region, and at least one optically transparent gate is located upon the gate dielectric and at least in-part over the channel region. Preferably, the at least one gate dielectric is also located over the photoactive region and the at least one optically transparent gate is also located at least in-part over the photoactive region, to provide enhanced charge transfer capabilities within the pixel sensor cell, which is typically a CMOS pixel sensor cell.

摘要翻译： 像素传感器单元，用于制造或操作像素传感器单元的方法和用于制造像素传感器单元的设计结构各自包括半导体衬底，其包括通过沟道区域与浮动扩散区域分离的光活性区域。 至少一个栅极介质至少部分地位于半导体衬底之间，介于光活性区域和浮动扩散区域之间，并且至少一个光学透明栅极位于栅极电介质上并且至少部分地位于沟道区域上 。 优选地，至少一个栅极电介质也位于光活性区域之上，并且至少一个光学透明栅极也至少部分地位于光活性区域上，以在像素传感器单元内提供增强的电荷转移能力，其是 通常是CMOS像素传感器单元。

公开(公告)号：US20090309143A1

公开(公告)日：2009-12-17

申请号：US12139524

申请日：2008-06-16

申请人： James William Adkisson ,  Rajendran Krishnasamy ,  John Joseph Ellis-Monaghan ,  Solomon Mulugeta ,  Charles Francis Musante ,  Richard J. Rassel

发明人： James William Adkisson ,  Rajendran Krishnasamy ,  John Joseph Ellis-Monaghan ,  Solomon Mulugeta ,  Charles Francis Musante ,  Richard J. Rassel

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14612

摘要： A pixel sensor cell, a method for fabricating or operating the pixel sensor cell and a design structure for fabricating the pixel sensor cell each include a semiconductor substrate that includes a photoactive region separated from a floating diffusion region by a channel region. At least one gate dielectric is located upon the semiconductor substrate at least in-part interposed between the photoactive region and the floating diffusion region, and at least one optically transparent gate is located upon the gate dielectric and at least in-part over the channel region. Preferably, the at least one gate dielectric is also located over the photoactive region and the at least one optically transparent gate is also located at least in-part over the photoactive region, to provide enhanced charge transfer capabilities within the pixel sensor cell, which is typically a CMOS pixel sensor cell.