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    Pixel sensor cell, methods and design structure including optically transparent gate
    1.
    发明授权
    Pixel sensor cell, methods and design structure including optically transparent gate 有权
    像素传感器单元，方法和设计结构包括光学透明门

    公开(公告)号：US07923750B2

    公开(公告)日：2011-04-12

    申请号：US12139524

    申请日：2008-06-16

    申请人： James William Adkisson ,  Rajendran Krishnasamy ,  John Joseph Ellis-Monaghan ,  Solomon Mulugeta ,  Charles Francis Musante ,  Richard J. Rassel

    发明人： James William Adkisson ,  Rajendran Krishnasamy ,  John Joseph Ellis-Monaghan ,  Solomon Mulugeta ,  Charles Francis Musante ,  Richard J. Rassel

    IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L31/00 ,  H01L29/74 ,  H01L31/111

    CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14612

    摘要： A pixel sensor cell, a method for fabricating or operating the pixel sensor cell and a design structure for fabricating the pixel sensor cell each include a semiconductor substrate that includes a photoactive region separated from a floating diffusion region by a channel region. At least one gate dielectric is located upon the semiconductor substrate at least in-part interposed between the photoactive region and the floating diffusion region, and at least one optically transparent gate is located upon the gate dielectric and at least in-part over the channel region. Preferably, the at least one gate dielectric is also located over the photoactive region and the at least one optically transparent gate is also located at least in-part over the photoactive region, to provide enhanced charge transfer capabilities within the pixel sensor cell, which is typically a CMOS pixel sensor cell.

    摘要翻译： 像素传感器单元，用于制造或操作像素传感器单元的方法和用于制造像素传感器单元的设计结构各自包括半导体衬底，其包括通过沟道区域与浮动扩散区域分离的光活性区域。 至少一个栅极介质至少部分地位于半导体衬底之间，介于光活性区域和浮动扩散区域之间，并且至少一个光学透明栅极位于栅极电介质上并且至少部分地位于沟道区域上 。 优选地，至少一个栅极电介质也位于光活性区域之上，并且至少一个光学透明栅极也至少部分地位于光活性区域上，以在像素传感器单元内提供增强的电荷转移能力，其是 通常是CMOS像素传感器单元。

    PIXEL SENSOR CELL, METHODS AND DESIGN STRUCTURE INCLUDING OPTICALLY TRANSPARENT GATE
    2.
    发明申请
    PIXEL SENSOR CELL, METHODS AND DESIGN STRUCTURE INCLUDING OPTICALLY TRANSPARENT GATE 审中-公开
    像素传感器单元，包括光学透明门的方法和设计结构

    公开(公告)号：US20090311822A1

    公开(公告)日：2009-12-17

    申请号：US12139523

    申请日：2008-06-16

    申请人： James William Adkisson ,  Rajendran Krishnasamy ,  John Joseph Ellis-Monaghan ,  Solomon Mulugeta ,  Charles Francis Musante ,  Richard J. Rassel

    发明人： James William Adkisson ,  Rajendran Krishnasamy ,  John Joseph Ellis-Monaghan ,  Solomon Mulugeta ,  Charles Francis Musante ,  Richard J. Rassel

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14614 ,  H01L27/14643 ,  H01L27/14689

    摘要： A pixel sensor cell, a method for fabricating or operating the pixel sensor cell and a design structure for fabricating the pixel sensor cell each include a semiconductor substrate that includes a photoactive region separated from a floating diffusion region by a channel region. At least one gate dielectric is located upon the semiconductor substrate at least in-part interposed between the photoactive region and the floating diffusion region, and at least one optically transparent gate is located upon the gate dielectric and at least in-part over the channel region. Preferably, the at least one gate dielectric is also located over the photoactive region and the at least one optically transparent gate is also located at least in-part over the photoactive region, to provide enhanced charge transfer capabilities within the pixel sensor cell, which is typically a CMOS pixel sensor cell.

    摘要翻译： 像素传感器单元，用于制造或操作像素传感器单元的方法和用于制造像素传感器单元的设计结构各自包括半导体衬底，其包括通过沟道区域与浮动扩散区域分离的光活性区域。 至少一个栅极介质至少部分地位于半导体衬底之间，介于光活性区域和浮动扩散区域之间，并且至少一个光学透明栅极位于栅极电介质上并且至少部分地位于沟道区域上 。 优选地，至少一个栅极电介质也位于光活性区域之上，并且至少一个光学透明栅极也至少部分地位于光活性区域上，以在像素传感器单元内提供增强的电荷转移能力，其是 通常是CMOS像素传感器单元。

    Structures, design structures and methods of fabricating global shutter pixel sensor cells
    4.
    发明授权
    Structures, design structures and methods of fabricating global shutter pixel sensor cells 有权
    制造全局快门像素传感器单元的结构，设计结构和方法

    公开(公告)号：US08138531B2

    公开(公告)日：2012-03-20

    申请号：US12561581

    申请日：2009-09-17

    申请人： James William Adkisson ,  John Joseph Ellis-Monaghan ,  Mark David Jaffe ,  Richard John Rassel

    发明人： James William Adkisson ,  John Joseph Ellis-Monaghan ,  Mark David Jaffe ,  Richard John Rassel

    IPC分类号： H01L31/113

    CPC分类号： H01L27/14609 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

    摘要： Pixel sensor cells, method of fabricating pixel sensor cells and design structure for pixel sensor cells. The pixel sensor cells including: a photodiode body in a first region of a semiconductor layer; a floating diffusion node in a second region of the semiconductor layer, a third region of the semiconductor layer between and abutting the first and second regions; and dielectric isolation in the semiconductor layer, the dielectric isolation surrounding the first, second and third regions, the dielectric isolation abutting the first, second and third regions and the photodiode body, the dielectric isolation not abutting the floating diffusion node, portions of the second region intervening between the dielectric isolation and the floating diffusion node.

    摘要翻译： 像素传感器单元，制造像素传感器单元的方法和像素传感器单元的设计结构。 所述像素传感器单元包括：在半导体层的第一区域中的光电二极管主体; 半导体层的第二区域中的浮动扩散节点，位于第一和第二区域之间并邻接第一和第二区域的半导体层的第三区域; 以及在所述半导体层中的绝缘隔离，围绕所述第一，第二和第三区域的介电隔离，所述介质隔离邻接所述第一，第二和第三区域以及所述光电二极管主体，所述介电隔离件不邻接所述浮动扩散节点，所述第二 介于介电隔离和浮动扩散节点之间的区域。

    STRUCTURES, DESIGN STRUCTURES AND METHODS OF FABRICATING GLOBAL SHUTTER PIXEL SENSOR CELLS
    5.
    发明申请
    STRUCTURES, DESIGN STRUCTURES AND METHODS OF FABRICATING GLOBAL SHUTTER PIXEL SENSOR CELLS 有权
    制作全球快门像素传感器细胞的结构，设计结构和方法

    公开(公告)号：US20110062542A1

    公开(公告)日：2011-03-17

    申请号：US12561581

    申请日：2009-09-17

    申请人： James William Adkisson ,  John Joseph Ellis-Monaghan ,  Mark David Jaffe ,  Richard John Rassel

    发明人： James William Adkisson ,  John Joseph Ellis-Monaghan ,  Mark David Jaffe ,  Richard John Rassel

    IPC分类号： H01L31/12 ,  H01L31/18 ,  G06F17/50

    CPC分类号： H01L27/14609 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

    摘要： Pixel sensor cells, method of fabricating pixel sensor cells and design structure for pixel sensor cells. The pixel sensor cells including: a photodiode body in a first region of a semiconductor layer; a floating diffusion node in a second region of the semiconductor layer, a third region of the semiconductor layer between and abutting the first and second regions; and dielectric isolation in the semiconductor layer, the dielectric isolation surrounding the first, second and third regions, the dielectric isolation abutting the first, second and third regions and the photodiode body, the dielectric isolation not abutting the floating diffusion node, portions of the second region intervening between the dielectric isolation and the floating diffusion node.

    摘要翻译： 像素传感器单元，制造像素传感器单元的方法和像素传感器单元的设计结构。 所述像素传感器单元包括：在半导体层的第一区域中的光电二极管主体; 半导体层的第二区域中的浮动扩散节点，位于第一和第二区域之间并邻接第一和第二区域的半导体层的第三区域; 以及在所述半导体层中的绝缘隔离，围绕所述第一，第二和第三区域的介电隔离，所述介质隔离邻接所述第一，第二和第三区域以及所述光电二极管主体，所述介电隔离件不邻接所述浮动扩散节点，所述第二 介于介电隔离和浮动扩散节点之间的区域。

    Variable focus point lens
    7.
    发明授权
    Variable focus point lens 有权
    可变焦点镜头

    公开(公告)号：US08238032B2

    公开(公告)日：2012-08-07

    申请号：US12708561

    申请日：2010-02-19

    申请人： John Joseph Ellis-Monaghan ,  Jeffrey Peter Gambino ,  Kirk David Peterson ,  Jed Hickory Rankin

    发明人： John Joseph Ellis-Monaghan ,  Jeffrey Peter Gambino ,  Kirk David Peterson ,  Jed Hickory Rankin

    IPC分类号： G02B3/12

    CPC分类号： G02B3/14

    摘要： A variable focal point lens includes a transparent tank, which comprises a transparent enclosure containing a transparent flexible membrane separating the inner volume of the transparent tank into an upper tank portion and a lower tank portion. The upper tank portion and the lower tank portion contain liquids having different indices of refraction. The transparent flexible membrane is electrostatically displaced to change the thicknesses of the first tank portion and the second tank portion in the path of the light, thereby shifting the focal point of the lens axially and/or laterally. The electrostatic displacement of the membrane may be effected by a fixed charge in the membrane and an array of enclosure-side conductive structures on the transparent enclosure, or an array of membrane-side conductive structures on the transparent membrane and an array of enclosure-side conductive structures.

    摘要翻译： 可变焦点透镜包括透明容器，透明容器包括透明的外壳，该透明外壳包含将透明容器的内部容积分隔成上部容器部分和下部容器部分的透明柔性膜。 上罐部分和下罐部分含有不同折射率的液体。 透明柔性膜被静电移位以改变光路中的第一罐部分和第二罐部分的厚度，从而轴向和/或横向地移动透镜的焦点。 膜的静电位移可以通过膜中的固定电荷和透明外壳上的封闭侧导电结构阵列，或透明膜上的膜侧导电结构阵列和外壳侧阵列 导电结构。

    STRUCTURE FOR CHARGE DISSIPATION DURING FABRICATION OF INTEGRATED CIRCUITS AND ISOLATION THEREOF
    8.
    发明申请
    STRUCTURE FOR CHARGE DISSIPATION DURING FABRICATION OF INTEGRATED CIRCUITS AND ISOLATION THEREOF 有权
    集成电路制造过程中的充电结构及其隔离结构

    公开(公告)号：US20080265422A1

    公开(公告)日：2008-10-30

    申请号：US12166362

    申请日：2008-07-02

    申请人： John Joseph Ellis-Monaghan ,  Jeffrey Peter Gambino ,  Timothy Dooling Sullivan ,  Steven Howard Voldman

    发明人： John Joseph Ellis-Monaghan ,  Jeffrey Peter Gambino ,  Timothy Dooling Sullivan ,  Steven Howard Voldman

    IPC分类号： H01L23/48

    CPC分类号： H01L27/0248 ,  Y10S438/926

    摘要： A structure for dissipating charge during fabrication of an integrated circuit. The structure includes: a substrate contact in a semiconductor substrate; one or more wiring levels over the substrate; one or more electrically conductive charge dissipation structures extending from a top surface of an uppermost wiring level of the one or more wiring levels through each lower wiring level of the one or more wiring levels to and in electrical contact with the substrate contact; and circuit structures in the substrate and in the one or more wiring layers, the charge dissipation structures not electrically contacting any the circuit structures in any of the one or more wiring levels, the one or more charge dissipation structures dispersed between the circuit structures.

    摘要翻译： 用于在集成电路制造期间耗散电荷的结构。 该结构包括：半导体衬底中的衬底接触; 衬底上的一个或多个布线层; 一个或多个导电电荷耗散结构，其从所述一个或多个布线层的最上层布线层的顶表面延伸通过所述一个或多个布线层的每个下布线层与所述基板接触电接触; 以及在基板中和在一个或多个布线层中的电路结构，电荷耗散结构在电路结构之间分散的一个或多个电荷耗散结构不会电接触任何一个或多个布线层中的任何一个电路结构。