Method and apparatus for providing shear-induced alignment of nanostructure in thin films
    3.
    发明申请
    Method and apparatus for providing shear-induced alignment of nanostructure in thin films 审中-公开
    用于在薄膜中提供纳米结构的剪切引导对准的方法和装置

    公开(公告)号:US20060013956A1

    公开(公告)日:2006-01-19

    申请号:US11011495

    申请日:2004-12-14

    IPC分类号: B05D3/02 B05D1/40

    摘要: A method and apparatus is disclosed for providing shear-induced alignment of nanostructures, such as spherical nanodomains, self-assembled nanodomains, and particles, in thin films, such as block copolymer (BCP) thin films. A silicon substrate is provided, and a thin film is formed on the substrate. A pad is then applied to the thin film, and optionally, a weight can be positioned on the pad. Optionally, a thin fluid layer can be formed between the pad and the thin film to transmit shear stress to the thin film. The thin film is annealed and the pad slid in a lateral direction with respect to the substrate to impart a shear stress to the thin film during annealing. The shear stress aligns the nanostructures in the thin film. After annealing and application of the shear stress, the pad is removed, and the nanostructures are uniformly aligned.

    摘要翻译: 公开了用于在诸如嵌段共聚物(BCP)薄膜的薄膜中提供纳米结构例如球形纳米结构域,自组装纳米域和颗粒的剪切诱导对准的方法和装置。 提供硅衬底,并且在衬底上形成薄膜。 然后将垫施加到薄膜上,并且可选地,可以将重量定位在垫上。 可选地,可以在垫和薄膜之间形成薄流体层,以将剪切应力传递到薄膜。 薄膜退火,并且焊盘相对于基板在横向方向上滑动,以在退火期间赋予薄膜剪切应力。 剪切应力使薄膜中的纳米结构对齐。 在退火和施加剪切应力之后,去除垫,并且纳米结构均匀地排列。