公开(公告)号：US5406214A

公开(公告)日：1995-04-11

申请号：US808671

申请日：1991-12-16

申请人： Janos Boda ,  Gyorgy Ferenczi ,  Peter Horvath ,  Zoltan Mirk ,  Tibor Pavelka

发明人： Janos Boda ,  Gyorgy Ferenczi ,  Peter Horvath ,  Zoltan Mirk ,  Tibor Pavelka

IPC分类号： G01N22/00 ,  G01R31/265 ,  G01R31/26 ,  G01R27/06

CPC分类号： G01N22/00 ,  G01R31/2656

摘要： A contactless apparatus for measuring contaminants in a semiconductor specimen (24) includes a tunable microwave generator (26) coupled by a coaxial cable (36) to a tuned narrowband microstrip antenna (38) that defines a through hole (72). The antenna is placed in near field relationship to the specimen to direct microwave energy toward a first specimen surface (44). This proximity provides a substantially more powerful microwave field than prior art systems, and the specimen comprises an impedance termination for the microwave path that includes the microwave generator and antenna, thereby rendering system measurements substantially immune to mechanical vibration of the specimen. A pulsed laser (42) directs optical energy through the antenna through hole toward the first specimen surface (44). The optical energy generates minority carriers within the specimen that begin to recombine upon cessation of each pulse. Minority lifetime decay affects microwave energy reflecting from freed holes and electrons in the specimen, which energy is coupled from the antenna to a detector (46) and preferably a computer system (48) that controls the system and provides signal processing of the detector output.

摘要翻译： 用于测量半导体样品（24）中的污染物的非接触式设备包括可调谐微波发生器（26），其通过同轴电缆（36）耦合到限定通孔（72）的调谐窄带微带天线（38）。 将天线放置成与样品的近场关系，以将微波能量引向第一样品表面（44）。 该接近度提供了比现有技术系统更强大的微波场，并且样本包括用于包括微波发生器和天线的微波路径的阻抗终端，从而使得系统测量基本上不受样本的机械振动的影响。 脉冲激光器（42）将光能通过天线通孔朝向第一样品表面（44）引导。 光能在样品中产生少量载体，在每个脉冲停止时开始复合。 少数生命周期衰减影响从样品中释放的空穴和电子反射的微波能量，该能量从天线耦合到检测器（46），优选地控制系统并提供检测器输出的信号处理的计算机系统（48）。

公开(公告)号：US06653850B2

公开(公告)日：2003-11-25

申请号：US09958172

申请日：2001-10-05

申请人： Tibor Pavelka

发明人： Tibor Pavelka

IPC分类号： G01R31302

CPC分类号： G01R31/2648 ,  G01R31/2656

摘要： The invention relates to a method and arrangement for passivating the surface of semiconductor samples in which, simultaneously to passivation, the life-time of free carriers is also determined by illuminating the semiconductor sample by a light pulse of higher energy than the forbidden band of the material, and the time function of the resistance change occurring in the semiconductor as a result of illumination is measured advantageously by a microwave reflectometer, and the life-time of carriers is determined as the characteristic time constant of the process. The essence of the method lies in that, the surface part of the semiconductor sample to be measured is continuously electrically charged. The arrangement comprises a microwave reflectometer (2), a signal processing unit (3), and a laser light source (4) illuminating the semiconductor sample (1). The surface of the semiconductor sample (1) charged by ions generated by corona generators (5, 6) simultaneously with the measurement.