公开(公告)号：US12078607B2

公开(公告)日：2024-09-03

申请号：US17569680

申请日：2022-01-06

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Chih-Yu Chang ,  Ken-Ichi Goto ,  Yen-Chieh Huang ,  Min-Kun Dai ,  Han-Ting Tsai ,  Sai-Hooi Yeong ,  Yu-Ming Lin ,  Chung-Te Lin

IPC分类号： G01N27/22 ,  G01R31/24 ,  G01R31/26 ,  H01L21/66 ,  H01L27/14

CPC分类号： G01N27/221 ,  G01R31/24 ,  G01R31/2648 ,  H01L22/14 ,  H01L27/14

摘要： A method of characterizing a wide-bandgap semiconductor material is provided. A substrate is provided, which includes a layer stack of a conductive material layer, a dielectric material layer, and a wide-bandgap semiconductor material layer. A mercury probe is disposed on a top surface of the wide-bandgap semiconductor material layer. Alternating-current (AC) capacitance of the layer stack is determined as a function of a variable direct-current (DC) bias voltage across the conductive material layer and the wide-bandgap semiconductor material layer. A material property of the wide-bandgap semiconductor material layer is extracted from a profile of the AC capacitance as a function of the DC bias voltage.

公开(公告)号：US11862672B2

公开(公告)日：2024-01-02

申请号：US17354500

申请日：2021-06-22

申请人： ROHM CO., LTD.

发明人： Katsuhisa Nagao

IPC分类号： H01L29/872 ,  H01L29/06 ,  G01R31/12 ,  H01L29/78 ,  H01L29/47 ,  H01L21/78 ,  H01L29/16 ,  H01L21/66 ,  H01L21/761 ,  H01L29/40 ,  G01R31/26

CPC分类号： H01L29/0623 ,  G01R31/129 ,  H01L21/761 ,  H01L21/78 ,  H01L22/14 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/408 ,  H01L29/47 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/872 ,  G01R31/2648 ,  H01L2224/0603

摘要： [Object] To provide a semiconductor device capable of improving a discharge starting voltage when measuring electric characteristics, and widening a pad area of a surface electrode or increasing the number of semiconductor devices (number of chips) to be obtained from one wafer, and a method for manufacturing the same.
[Solution Means] A semiconductor device 1 includes an n-type SiC layer 2 having a first surface 2A, a second surface 2B, and end faces 2C, a p-type voltage relaxing layer 7 formed in the SiC layer 2 so as to be exposed to the end portion of the first surface 2A of the SiC layer 2, an insulating layer 8 formed on the SiC layer 2 so as to cover the voltage relaxing layer 7, and an anode electrode 9 that is connected to the first surface 2A of the SiC layer 2 through the insulating layer 8 and has a pad area 95 selectively exposed.

公开(公告)号：US20230341438A1

公开(公告)日：2023-10-26

申请号：US17945743

申请日：2022-09-15

申请人： ENGION CO., LTD.

发明人： Hyoung Sik KIM

IPC分类号： G01R35/00 ,  G01R1/073 ,  G01R31/26

CPC分类号： G01R1/07307 ,  G01R31/2648 ,  G01R35/005

摘要： The present invention provides a semiconductor film layer inspection apparatus (10) for detecting the electrical characteristics of a semiconductor film layer (30) formed on one surface of a substrate (20) and including an oxide semiconductor layer (31), and a detection unit used therein. The apparatus includes a base unit (40), a detection unit (200) and a carrier generator (300 300a and 300b). The detection unit (200) includes: a detection probe pin (230) and a detection probe module (202). The detection probe pin (230) includes a detection probe pin body (231) and a detection probe pin contactor unit (233). The detection probe pin contactor unit at least partially forms a plurality of independently detectable and operable segmented pin contactor unit blocks.

公开(公告)号：US20180188205A1

公开(公告)日：2018-07-05

申请号：US15690624

申请日：2017-08-30

申请人： Northwestern University

发明人： Matthew Grayson ,  Jiajun Luo

IPC分类号： G01N27/72 ,  G01R19/08 ,  G01R15/20 ,  H05K1/11

CPC分类号： G01N27/72 ,  G01R15/202 ,  G01R19/08 ,  G01R31/2648 ,  H05K1/11 ,  H05K2201/032

摘要： Systems and methods can provide a fast and accurate way to measure conductivity and Hall effect, such that transient conductivities, transient carrier densities or transient mobilities can be measured on millisecond time scales, for example. The systems and methods can also reduce the minimum magnetic field needed to extract carrier density or mobility of a given sample, and reduce the minimum mobility that can be measured with a given magnetic field.

公开(公告)号：US20180179661A1

公开(公告)日：2018-06-28

申请号：US15788142

申请日：2017-10-19

申请人： SUMCO CORPORATION

发明人： Noritomo MITSUGI ,  Kazutaka ERIGUCHI ,  Shuichi SAMATA ,  Ayumi MASADA

IPC分类号： C30B25/16 ,  C30B29/06 ,  C30B25/20 ,  G01R31/26 ,  H01L21/66

CPC分类号： C30B25/16 ,  C30B25/20 ,  C30B29/06 ,  G01R31/2648 ,  H01L22/12 ,  H01L22/20

摘要： The method is a method of evaluating a manufacturing process of a silicon material, wherein the manufacturing process includes a process that uses a member containing a carbon-containing sintered body, and the method of evaluating the manufacturing process of a silicon material includes performing DLTS measurement on a silicon material manufactured in the manufacturing process, and estimating a heavy metal contamination source of a silicon material manufactured in the manufacturing process with an indicator in the form of presence/absence of detection of a peak of a carbon-related level and presence/absence of detection of a peak of a heavy metal-related level in a DLTS spectrum obtained by the DLTS measurement.

公开(公告)号：US20180024186A1

公开(公告)日：2018-01-25

申请号：US15546252

申请日：2016-01-19

申请人： Soitec ,  UNIVERSITE CATHOLIQUE DU LOUVAIN

发明人： Cédric Malaquin ,  Jean-Pierre Raskin ,  Eric Desbonnets

IPC分类号： G01R31/28 ,  G01R29/12 ,  G01R29/08 ,  G01R31/26

CPC分类号： G01R31/2822 ,  G01R29/0878 ,  G01R29/12 ,  G01R31/2648 ,  G01R31/2831 ,  G01R31/2887 ,  G01R31/2889

摘要： The disclosure relates to a device for measuring an electrical characteristic of a substrate comprising a support made of a dielectric material having a bearing surface, the support comprising an electrical test structure having a contact surface flush with the bearing surface of the support, the bearing surface of the support and the contact surface of the electrical test structure being suitable for coming into close contact with a substrate. The measurement device also comprises at least one connection bump contact formed on another surface of the support and electrically linked to the electrical test structure. This disclosure also relates to a system for characterizing a substrate and a method for measuring a characteristic of a substrate employing the measurement device.

公开(公告)号：US09874596B2

公开(公告)日：2018-01-23

申请号：US14772304

申请日：2014-03-10

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Shoyu Watanabe ,  Akihiro Koyama ,  Shigehisa Yamamoto ,  Yukiyasu Nakao ,  Kazuya Konishi

IPC分类号： G01R31/26 ,  H01L21/66 ,  H01L29/16 ,  H01L29/32 ,  H01L29/66 ,  H01L29/78 ,  G01R31/28 ,  H01L21/56

CPC分类号： G01R31/2632 ,  G01R31/2648 ,  G01R31/2855 ,  G01R31/2877 ,  H01L21/565 ,  H01L22/14 ,  H01L29/1608 ,  H01L29/32 ,  H01L29/66068 ,  H01L29/7805 ,  H01L2924/0002

摘要： The present invention provides a method for manufacturing silicon carbide semiconductor apparatus including a testing step of testing a PN diode for the presence or absence of stacking faults in a relatively short time and an energization test apparatus. The present invention sets the temperature of a bipolar semiconductor element at 150° C. or higher and 230° C. or lower, causes a forward current having a current density of 120 [A/cm2] or more and 400 [A/cm2] or less to continuously flow through the bipolar semiconductor element, calculates, in a case where a forward resistance of the bipolar semiconductor element through which the forward current flows reaches a saturation state, the degree of change in the forward resistance, and determines whether the calculated degree of change is smaller than a threshold value.

公开(公告)号：US20170234960A1

公开(公告)日：2017-08-17

申请号：US15514545

申请日：2015-09-16

申请人： SunEdison Semiconductor Limited (UEN201334164H)

发明人： Igor Rapoport ,  Robert James Crepin ,  Patrick Alan Taylor

IPC分类号： G01R35/00 ,  H01L21/265 ,  H01L29/207 ,  H01L29/167 ,  H01L29/36 ,  H01L21/266 ,  G01R31/26 ,  H01L21/324

CPC分类号： G01R35/007 ,  G01R31/2648 ,  G01R31/2831 ,  G01R35/005 ,  H01L21/26506 ,  H01L21/2654 ,  H01L21/266 ,  H01L21/3221 ,  H01L21/324 ,  H01L22/12 ,  H01L22/14 ,  H01L29/167 ,  H01L29/207 ,  H01L29/36

摘要： A method of preparing an iron-implanted semiconductor wafer for use in surface photovoltage iron mapping and other evaluation techniques. A semiconductor wafer is implanted with iron through the at least two different regions of the front surface of the semiconductor at different iron implantation densities, and the iron-implanted semiconductor wafer is annealed at a temperature and duration sufficient to diffuse implanted iron into the bulk region of the semiconductor wafer.

公开(公告)号：US20160266196A1

公开(公告)日：2016-09-15

申请号：US14747546

申请日：2015-06-23

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Keith A. Jenkins ,  Barry P. Linder

IPC分类号： G01R31/26 ,  G01R31/02

CPC分类号： G01R31/2628 ,  G01R31/025 ,  G01R31/2601 ,  G01R31/2648

摘要： A method of measuring semiconductor output characteristics is provided that includes connecting a pulse generator to the gate structure of a semiconductor device, and applying a plurality of voltage pulses at least some of which having a different pulse width to the gate structure of the semiconductor device. The average current is measured from the drain structure of the device for a duration of each pulse of the plurality of pulses. From the measured values for the average current, a self-heating curve of the average current divided by the pulse width is plotted as a function of the pulse width. The self-heating curve is then extrapolated to a pulse width substantially equal to zero to provide a value of drain current measurements without self-heating effects.

摘要翻译： 提供了一种测量半导体输出特性的方法，包括将脉冲发生器连接到半导体器件的栅极结构，并将至少其中一些具有不同脉冲宽度的电压脉冲施加到半导体器件的栅极结构。 在多个脉冲的每个脉冲的持续时间内，从器件的漏极结构测量平均电流。 根据平均电流的测量值，将平均电流的自加热曲线除以脉冲宽度作为脉冲宽度的函数。 然后将自热曲线外推到基本上等于零的脉冲宽度，以提供没有自热效应的漏极电流测量值。

公开(公告)号：US09331151B2

公开(公告)日：2016-05-03

申请号：US14788159

申请日：2015-06-30

申请人： STMicroelectronics S.r.l.

发明人： Sebastiano Ravesi ,  Corrado Accardi ,  Cristina Tringali ,  Noemi Graziana Sparta′ ,  Stella Loverso ,  Filippo Giannazzo

IPC分类号： H01L23/58 ,  H01L21/322 ,  H01L29/16 ,  H01L21/02 ,  H01L21/762 ,  H01L29/786 ,  H01L31/028

CPC分类号： H01L29/1606 ,  G01R31/2648 ,  H01L21/02376 ,  H01L21/7624 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78684 ,  H01L31/028

摘要： The present disclosure regards a method for coupling a graphene layer to a substrate having at least one hydrophilic surface, the method comprising the steps of providing the substrate having at least one hydrophilic surface, depositing on the hydrophilic surface a layer of a solvent selected in the group constituted by acetone, ethyl lactate, isopropyl alcohol, methylethyl ketone and mixtures thereof and depositing on the solvent layer a graphene layer. It moreover regards an electronic device comprising the graphene/substrate structure obtained.