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公开(公告)号:US20060245117A1
公开(公告)日:2006-11-02
申请号:US11475517
申请日:2006-06-27
申请人: Janusz Nowak , Konstantin Nikolaev , Khuong Tran , Mark Kief
发明人: Janusz Nowak , Konstantin Nikolaev , Khuong Tran , Mark Kief
IPC分类号: G11B5/187
CPC分类号: G11B5/3906 , Y10T29/49021 , Y10T29/49025 , Y10T29/49032 , Y10T29/49034 , Y10T29/49128 , Y10T29/49151 , Y10T428/1121
摘要: A sensor includes a sensor stack and a layer of high resistivity material having a precursor within the sensor stack. When a current is applied at the precursor, a current confining path is formed through the layer of high resistivity material at the precursor.
摘要翻译: 传感器包括传感器堆叠和在传感器堆叠内具有前体的高电阻率材料层。 当在前体施加电流时,在前体处形成通过高电阻率材料层的电流限制路径。
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公开(公告)号:US20050122633A1
公开(公告)日:2005-06-09
申请号:US10728406
申请日:2003-12-05
申请人: Janusz Nowak , Konstantin Nikolaev , Khuong Tran , Mark Kief
发明人: Janusz Nowak , Konstantin Nikolaev , Khuong Tran , Mark Kief
CPC分类号: G11B5/3906 , Y10T29/49021 , Y10T29/49025 , Y10T29/49032 , Y10T29/49034 , Y10T29/49128 , Y10T29/49151 , Y10T428/1121
摘要: A magnetoresistive (MR) sensor having a decreased electrical profile due to a confining of the device sense current within a conductive nanoconstriction. The MR sensor includes a giant magnetoresistive (GMR) stack and a layer of high resistivity material within the GMR stack. The layer of high resistivity material includes a nanoconstriction precursor. When a punch current is applied at the nanoconstriction precursor, a conductive nanoconstriction is formed through the layer of high resistivity material at the nanoconstriction precursor.
摘要翻译: 由于在传导性纳米收集过程中限制了器件感应电流,所以具有降低的电气剖面的磁阻(MR)传感器。 MR传感器包括巨磁阻(GMR)堆叠和GMR堆叠内的高电阻率材料层。 高电阻率材料层包括纳米收集前体。 当在纳米收集前体施加冲击电流时,在纳米收集前体处通过高电阻率材料层形成导电纳米收缩。
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公开(公告)号:US20070139827A1
公开(公告)日:2007-06-21
申请号:US11305778
申请日:2005-12-16
申请人: Zheng Gao , Brian Karr , Song Xue , Eric Granstrom , Khuong Tran , Yi Li
发明人: Zheng Gao , Brian Karr , Song Xue , Eric Granstrom , Khuong Tran , Yi Li
CPC分类号: G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08 , Y10T428/1114 , Y10T428/1121
摘要: A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. At least one of the first magnetic portion and the second magnetic portion includes a multilayer structure having a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor has an MR ratio of at least about 80% when the magnetic sensor has a resistance-area (RA) product of about 1.0 Ω·μm2.
摘要翻译: 磁传感器包括具有在第一磁性部分和第二磁性部分之间的第一磁性部分,第二磁性部分和阻挡层的传感器堆叠。 第一磁性部分和第二磁性部分中的至少一个包括多层结构,其具有与阻挡层相邻的具有正的磁致伸缩的第一磁性层,第二磁性层以及第一磁性层和第二磁性层之间的中间层 层。 磁传感器具有至少约80%的MR比,当磁传感器的电阻面积(RA)乘积约为1.0欧姆/平方毫米时。
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