公开(公告)号：US20160149046A1

公开(公告)日：2016-05-26

申请号：US14944676

申请日：2015-11-18

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Masayoshi Fuchi ,  Hajime Watakabe ,  Takashi Okada ,  Arichika Ishiba

IPC: H01L29/786 ,  H01L21/467 ,  H01L29/66 ,  H01L29/423 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/467 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78696

Abstract: According to one embodiment, a thin-film transistor and a method of manufacturing the thin-film transistor provided herein achieve enhanced reliability by preventing a disconnection in a gate insulating film at a position corresponding to an end surface of an oxide semiconductor layer. The oxide semiconductor layer includes a channel region, a source region, and a drain region. The channel region is placed between the source region and the drain region. The gate insulating film covers the oxide semiconductor layer in a range from at least a part of an upper surface to an end surface continuous with the upper surface of the oxide semiconductor layer. The oxide semiconductor layer is formed so as to have an oxygen concentration that becomes lower from a top side to a bottom side and the end surface is inclined so as to diverge from the top side to the bottom side.

Abstract translation: 根据一个实施例，本文提供的薄膜晶体管和制造薄膜晶体管的方法通过防止栅极绝缘膜在与氧化物半导体层的端面相对应的位置处的断开而实现增强的可靠性。 氧化物半导体层包括沟道区，源极区和漏极区。 沟道区域放置在源极区域和漏极区域之间。 栅极绝缘膜在从上表面至与氧化物半导体层的上表面连续的端面的至少一部分的范围内覆盖氧化物半导体层。 氧化物半导体层形成为具有从上侧到底侧变低的氧浓度，并且端面倾斜以从顶侧向底侧发散。