公开(公告)号：US20250063767A1

公开(公告)日：2025-02-20

申请号：US18939825

申请日：2024-11-07

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI ,  Kazufumi WATABE ,  Tomoyuki ARIYOSHI ,  Osamu KARIKOME ,  Ryohei TAKAYA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49

Abstract: The invention allows stable fabrication of a TFT circuit board used in a display device and having thereon an oxide semiconductor TFT. A TFT circuit board includes a TFT that includes an oxide semiconductor. The TFT has a gate insulating film formed on part of the oxide semiconductor and a gate electrode formed on the gate insulating film. A portion of the oxide semiconductor that is covered with the gate electrode 104 and a portion of the oxide semiconductor that is not covered with the gate electrode are both covered with a first interlayer insulating film. The first interlayer insulating film is covered with a first film 106, and the first film is covered with a first AlO film.

公开(公告)号：US20230361220A1

公开(公告)日：2023-11-09

申请号：US18346927

申请日：2023-07-05

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI ,  Kazufumi WATABE ,  Tomoyuki ARIYOSHI ,  Osamu KARIKOME ,  Ryohei TAKAYA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/40 ,  H01L29/45

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/401 ,  H01L27/124 ,  H01L29/45

Abstract: The invention allows stable fabrication of a TFT circuit board used in a display device and having thereon an oxide semiconductor TFT. A TFT circuit board includes a TFT that includes an oxide semiconductor. The TFT has a gate insulating film formed on part of the oxide semiconductor and a gate electrode formed on the gate insulating film. A portion of the oxide semiconductor that is covered with the gate electrode 104 and a portion of the oxide semiconductor that is not covered with the gate electrode are both covered with a first interlayer insulating film. The first interlayer insulating film is covered with a first film 106, and the first film is covered with a first AlO film.

公开(公告)号：US20210305434A1

公开(公告)日：2021-09-30

申请号：US17347630

申请日：2021-06-15

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI ,  Kazufumi WATABE ,  Tmoyuki ARIYOSHI ,  Osamu KARIKOME ,  Ryohei TAKAYA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/423 ,  H01L29/40

Abstract: The invention allows stable fabrication of a TFT circuit board used in a display device and having thereon an oxide semiconductor TFT. A TFT circuit board includes a TFT that includes an oxide semiconductor. The TFT has a gate insulating film formed on part of the oxide semiconductor and a gate electrode formed on the gate insulating film. A portion of the oxide semiconductor that is covered with the gate electrode 104 and a portion of the oxide semiconductor that is not covered with the gate electrode are both covered with a first interlayer insulating film. The first interlayer insulating film is covered with a first film 106, and the first film is covered with a first AlO film.