公开(公告)号：US09097847B2

公开(公告)日：2015-08-04

申请号：US14370997

申请日：2013-03-08

Applicant: Japan Science and Technology Agency

Inventor： Yasushi Takahashi ,  Yoshitaka Inui ,  Takashi Asano ,  Susumu Noda ,  Masahiro Chihara

IPC: H01S3/30 ,  G02B6/122 ,  G02F1/365 ,  G02F1/025 ,  G02B6/13 ,  H01S3/063 ,  H01S3/0941

CPC classification number: G02B6/1225 ,  G02B6/13 ,  G02B6/136 ,  G02F1/025 ,  G02F1/365 ,  G02F2202/10 ,  G02F2202/32 ,  G02F2203/15 ,  H01S3/0635 ,  H01S3/0637 ,  H01S3/09415 ,  H01S3/30

Abstract: A Raman scattered light enhancement device including a waveguide provided in a photonic crystal (20) made of a semiconductor substrate in which holes (20a) are formed. The waveguide has resonant modes with respect to incident light at a plurality of frequencies. A difference in frequency between one resonant mode and another resonant mode is equal to a Raman shift frequency of the semiconductor substrate. A waveguide forming direction with respect to a crystal plane orientation of the semiconductor substrate is set so as to maximize a Raman transition probability which is represented by electromagnetic field distribution of the two resonant modes and a Raman tensor of the semiconductor substrate.

Abstract translation: 一种拉曼散射光增强装置，包括设置在其中形成有孔（20a）的半导体衬底的光子晶体（20）中的波导。 波导具有相对于多个频率的入射光的谐振模式。 一个谐振模式和另一谐振模式之间的频率差等于半导体衬底的拉曼移位频率。 设置相对于半导体衬底的晶面取向的波导形成方向，以使由两个谐振模式的电磁场分布和半导体衬底的拉曼张量表示的拉曼转移概率最大化。

公开(公告)号：US20140355630A1

公开(公告)日：2014-12-04

申请号：US14370997

申请日：2013-03-08

Applicant: Japan Science and Technology Agency

Inventor： Yasushi Takahashi ,  Yoshitaka Inui ,  Takashi Asano ,  Susumu Noda ,  Masahiro Chihara

IPC: G02B6/122 ,  G02B6/13 ,  H01S3/30

CPC classification number: G02B6/1225 ,  G02B6/13 ,  G02B6/136 ,  G02F1/025 ,  G02F1/365 ,  G02F2202/10 ,  G02F2202/32 ,  G02F2203/15 ,  H01S3/0635 ,  H01S3/0637 ,  H01S3/09415 ,  H01S3/30

Abstract: A Raman scattered light enhancement device including a waveguide provided in a photonic crystal (20) made of a semiconductor substrate in which holes (20a) are formed. The waveguide has resonant modes with respect to incident light at a plurality of frequencies. A difference in frequency between one resonant mode and another resonant mode is equal to a Raman shift frequency of the semiconductor substrate. A waveguide forming direction with respect to a crystal plane orientation of the semiconductor substrate is set so as to maximize a Raman transition probability which is represented by electromagnetic field distribution of the two resonant modes and a Raman tensor of the semiconductor substrate.

Abstract translation: 一种拉曼散射光增强装置，包括设置在其中形成有孔（20a）的半导体衬底的光子晶体（20）中的波导。 波导具有相对于多个频率的入射光的谐振模式。 一个谐振模式和另一谐振模式之间的频率差等于半导体衬底的拉曼移位频率。 设置相对于半导体衬底的晶面取向的波导形成方向，以使由两个谐振模式的电磁场分布和半导体衬底的拉曼张量表示的拉曼转移概率最大化。