公开(公告)号：US11449069B2

公开(公告)日：2022-09-20

申请号：US16685715

申请日：2019-11-15

申请人： Jeffrey A Albelo

发明人： Jeffrey A Albelo

IPC分类号： G05D1/02 ,  G01S7/481 ,  G01S17/931

摘要： A beam scanner for use in conjunction with the operational guidance system of a vehicle. The beam scanner can be used as part of an electromagnetic signal transmit module or an electromagnetic signal receive module in either a transmissive or reflective mode. The beam scanner is a substantially transparent and partially conductive substrate plate having at least one generally planar face thereon with a series of particles affixed with said plate, each of said particles of an arbitrary size, and each of said particles possessing an induced dipole moment, and each of said particles in electrical contact with said partially conductive substrate plate.

公开(公告)号：US20200081449A1

公开(公告)日：2020-03-12

申请号：US16685715

申请日：2019-11-15

申请人： Jeffrey A Albelo

发明人： Jeffrey A Albelo

IPC分类号： G05D1/02 ,  G01S7/481

摘要： A beam scanner for use in conjunction with the operational guidance system of a vehicle. The beam scanner can be used as part of an electromagnetic signal transmit module or an electromagnetic signal receive module in either a transmissive or reflective mode. The beam scanner is a substantially transparent and partially conductive substrate plate having at least one generally planar face thereon with a series of particles affixed with said plate, each of said particles of an arbitrary size, and each of said particles possessing an induced dipole moment, and each of said particles in electrical contact with said partially conductive substrate plate.

公开(公告)号：US06605394B2

公开(公告)日：2003-08-12

申请号：US09848859

申请日：2001-05-03

申请人： Melvin W. Montgomery ,  Jeffrey A Albelo

发明人： Melvin W. Montgomery ,  Jeffrey A Albelo

IPC分类号： G03F900

CPC分类号： G03F1/46 ,  G03F1/76 ,  G03F7/091

摘要： The disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including applying an organic antireflection coating over a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; and exposing a surface of the DUV photoresist to the direct write continuous wave laser. The direct write continuous wave laser operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.