-
公开(公告)号：US07135256B2
公开(公告)日：2006-11-14
申请号：US10651549
申请日：2003-08-29
IPC分类号： G03F9/00
CPC分类号： G03F7/0045 , G03F7/091 , G03F7/092 , G03F7/093 , G03F7/11 , Y10S430/143 , Y10S430/146
摘要： In photomask making, the environmental sensitivity of a chemically amplified photoresist is eliminated, or at least substantially reduced, by overcoating the photoresist with a thin coating (topcoat) of a protective but transmissive material. To provide improved stability during the long time period required for direct writing of a photomask pattern, typically in the range of about 20 hours, the protective topcoat material is pH adjusted to be as neutral in pH as possible, depending on other process variable requirements. For example, a pH adjusted to be in the range from about 5 to about 8 is particularly helpful. Not only is the stability of the chemically amplified photoresist better during direct writing when the protective topcoat is pH adjusted, but a photoresist-coated substrate with pH adjusted topcoat over its surface can be stored longer prior to imaging without adverse consequences.
摘要翻译： 在光掩模制造中，通过用保护但透射材料的薄涂层（顶涂层）涂覆光致抗蚀剂，消除了化学放大的光致抗蚀剂的环境敏感性，或至少大大降低了环境敏感性。 为了在通常在约20小时的范围内直接写入光掩模图案所需的长时间段期间提供改进的稳定性，根据其它工艺变量要求，将保护性面漆材料的pH调节至尽可能的pH中性。 例如，调节至约5至约8范围内的pH特别有用。 当保护性面漆进行pH调节时，不仅在直接书写期间化学放大光致抗蚀剂的稳定性更好，而在其表面之前具有pH调节的面漆的光致抗蚀剂涂覆的基材可以在成像之前被储存更长时间，而不会产生不良后果。
-
公开(公告)号：US06998206B2
公开(公告)日：2006-02-14
申请号：US10758827
申请日：2004-01-15
CPC分类号： G03F7/168 , G03F1/46 , G03F1/50 , G03F1/76 , G03F7/091 , Y10S430/146 , Y10S430/151
摘要： One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; post apply baking the DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.
摘要翻译： 本公开的一个主要实施例涉及一种使用直写式连续波激光器光学制造光掩模的方法，包括一系列步骤，包括：在包含含铬层的光掩模的表面上施加有机抗反射涂层; 在有机抗反射涂层上施加化学放大的DUV光致抗蚀剂; 在特定温度范围内涂抹DUV光刻胶; 将DUV光致抗蚀剂的表面暴露于直写式连续波激光器; 并且在特定温度范围内曝光烘烤成像的DUV光致抗蚀剂。 直写式连续波激光器优选在244nm或257nm的波长下工作。 在替代实施例中，有机抗反射涂层可以涂覆在覆盖含铬层的无机抗反射涂层上。
-
公开(公告)号：US06703169B2
公开(公告)日：2004-03-09
申请号：US09912116
申请日：2001-07-23
IPC分类号： G03F900
CPC分类号： G03F7/168 , G03F1/46 , G03F1/50 , G03F1/76 , G03F7/091 , Y10S430/146 , Y10S430/151
摘要： One principal embodiment of the disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including: applying an organic antireflection coating over a surface of a photomask which includes a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; post apply baking the DUV photoresist over a specific temperature range; exposing a surface of the DUV photoresist to the direct write continuous wave laser; and, post exposure baking the imaged DUV photoresist over a specific temperature range. The direct write continuous wave laser preferably operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.
摘要翻译： 本公开的一个主要实施例涉及一种使用直写式连续波激光器光学制造光掩模的方法，包括一系列步骤，包括：在包含含铬层的光掩模的表面上施加有机抗反射涂层; 在有机抗反射涂层上施加化学放大的DUV光致抗蚀剂; 在特定温度范围内涂抹DUV光刻胶; 将DUV光致抗蚀剂的表面暴露于直写式连续波激光器; 并且在特定温度范围内曝光烘烤成像的DUV光致抗蚀剂。 直写式连续波激光器优选在244nm或257nm的波长下工作。 在替代实施例中，有机抗反射涂层可以涂覆在覆盖含铬层的无机抗反射涂层上。
-
公开(公告)号：US11449069B2
公开(公告)日：2022-09-20
申请号：US16685715
申请日：2019-11-15
申请人： Jeffrey A Albelo
发明人： Jeffrey A Albelo
IPC分类号： G05D1/02 , G01S7/481 , G01S17/931
摘要： A beam scanner for use in conjunction with the operational guidance system of a vehicle. The beam scanner can be used as part of an electromagnetic signal transmit module or an electromagnetic signal receive module in either a transmissive or reflective mode. The beam scanner is a substantially transparent and partially conductive substrate plate having at least one generally planar face thereon with a series of particles affixed with said plate, each of said particles of an arbitrary size, and each of said particles possessing an induced dipole moment, and each of said particles in electrical contact with said partially conductive substrate plate.
-
公开(公告)号：US20200081449A1
公开(公告)日：2020-03-12
申请号：US16685715
申请日：2019-11-15
申请人： Jeffrey A Albelo
发明人： Jeffrey A Albelo
摘要： A beam scanner for use in conjunction with the operational guidance system of a vehicle. The beam scanner can be used as part of an electromagnetic signal transmit module or an electromagnetic signal receive module in either a transmissive or reflective mode. The beam scanner is a substantially transparent and partially conductive substrate plate having at least one generally planar face thereon with a series of particles affixed with said plate, each of said particles of an arbitrary size, and each of said particles possessing an induced dipole moment, and each of said particles in electrical contact with said partially conductive substrate plate.
-
6.发明授权公开(公告)号：US06605394B2
公开(公告)日：2003-08-12
申请号：US09848859
申请日：2001-05-03
IPC分类号： G03F900
摘要： The disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including applying an organic antireflection coating over a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; and exposing a surface of the DUV photoresist to the direct write continuous wave laser. The direct write continuous wave laser operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.
-
公开(公告)号：US08624157B2
公开(公告)日：2014-01-07
申请号：US11440792
申请日：2006-05-25
CPC分类号： B23K26/364 , B23K26/0624 , B23K26/384 , B23K26/386 , B23K26/389 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： Systems and methods are provided for scribing wafers with short laser pulses so as to reduce the ablation threshold of target material. In a stack of material layers, a minimum laser ablation threshold based on laser pulse width is determined for each of the layers. The highest of the minimum laser ablation thresholds is selected and a beam of one or more laser pulses is generated having a fluence in a range between the selected laser ablation threshold and approximately ten times the selected laser ablation threshold. In one embodiment, a laser pulse width in a range of approximately 0.1 picosecond to approximately 1000 picoseconds is used. In addition, or in other embodiments, a high pulse repetition frequency is selected to increase the scribing speed. In one embodiment, the pulse repetition frequency is in a range between approximately 100 kHz and approximately 100 MHz.
摘要翻译： 提供了用短激光脉冲刻划晶片的系统和方法，以减少目标材料的消融阈值。 在堆叠的材料层中，针对每个层确定基于激光脉冲宽度的最小激光烧蚀阈值。 选择最小激光消融阈值中的最高值，并且产生一个或多个激光脉冲的光束，其具有在所选择的激光烧蚀阈值和所选激光烧蚀阈值的大约十倍之间的范围内的能量密度。 在一个实施例中，使用在约0.1皮秒至约1000皮秒范围内的激光脉冲宽度。 另外或在其他实施例中，选择高脉冲重复频率以增加划线速度。 在一个实施例中，脉冲重复频率在大约100kHz到大约100MHz之间的范围内。
-
公开(公告)号：US20070272668A1
公开(公告)日：2007-11-29
申请号：US11440792
申请日：2006-05-25
CPC分类号： B23K26/364 , B23K26/0624 , B23K26/384 , B23K26/386 , B23K26/389 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： Systems and methods are provided for scribing wafers with short laser pulses so as to reduce the ablation threshold of target material. In a stack of material layers, a minimum laser ablation threshold based on laser pulse width is determined for each of the layers. The highest of the minimum laser ablation thresholds is selected and a beam of one or more laser pulses is generated having a fluence in a range between the selected laser ablation threshold and approximately ten times the selected laser ablation threshold. In one embodiment, a laser pulse width in a range of approximately 0.1 picosecond to approximately 1000 picoseconds is used. In addition, or in other embodiments, a high pulse repetition frequency is selected to increase the scribing speed. In one embodiment, the pulse repetition frequency is in a range between approximately 100 kHz and approximately 100 MHz.
摘要翻译： 提供了用短激光脉冲刻划晶片的系统和方法，以减少目标材料的消融阈值。 在堆叠的材料层中，针对每个层确定基于激光脉冲宽度的最小激光烧蚀阈值。 选择最小激光消融阈值中的最高值，并且产生一个或多个激光脉冲的光束，其具有在所选择的激光烧蚀阈值和所选激光烧蚀阈值的大约十倍之间的范围内的能量密度。 在一个实施例中，使用在约0.1皮秒至约1000皮秒范围内的激光脉冲宽度。 另外或在其他实施例中，选择高脉冲重复频率以增加划线速度。 在一个实施例中，脉冲重复频率在大约100kHz到大约100MHz之间的范围内。
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.013 秒)
