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公开(公告)号：US06361405B1
公开(公告)日：2002-03-26
申请号：US09544734
申请日：2000-04-06
IPC分类号： B24B100
CPC分类号： B24B37/042 , B23K26/3576 , H01L2223/54493
摘要： A utility wafer, more specifically, an utility wafer for simulating a workpiece in a semiconductor processing system. The utility wafer includes a first side, a second side and a peripheral edge wherein one or both edges of the peripheral edge are relieved to remove the otherwise sharp edge. In one embodiment, the peripheral edge is polished. The utility wafer is resistant to chipping, stress cracking and breakage when undergoing chemical mechanical planarization.
摘要翻译： 一种效用晶片，更具体地说，一种用于在半导体处理系统中模拟工件的效用晶片。 实用晶片包括第一侧，第二侧和周边边缘，其中外围边缘的一个或两个边缘被释放以除去其它锋利的边缘。 在一个实施例中，抛光周边。 实用晶圆在进行化学机械平面化时具有抗碎裂，应力开裂和断裂的能力。
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公开(公告)号：US08088298B2
公开(公告)日：2012-01-03
申请号：US12182076
申请日：2008-07-29
IPC分类号： C03C15/00
CPC分类号： B24B49/12 , B24B37/013 , B24B37/205 , B24B49/08 , B24D7/14 , G05B15/02 , H01L21/31053 , H01L21/3212 , H01L22/26
摘要： Methods and apparatus for spectrum-based endpointing. An endpointing method includes selecting two or more reference spectra. Each reference spectrum is a spectrum of white light reflected from a film of interest on a first substrate and has a thickness greater than a target thickness. The reference spectra is selected for particular spectra-based endpoint determination logic so that the target thickness is achieved when endpoint is called by applying the particular spectra-based endpoint logic. The method includes obtaining two or more current spectra. Each current spectrum is a spectrum of white light reflected from a film of interest on a second substrate when the film of interest is being subjected to a polishing step and has a current thickness that is greater than the target thickness. The method includes determining, for the second substrate, when an endpoint of the polishing step has been achieved.
摘要翻译： 用于基于频谱的终点的方法和装置。 一种终点方法包括选择两个或更多个参考光谱。 每个参考光谱是在第一衬底上从感兴趣的膜反射的白光的光谱，并且具有大于目标厚度的厚度。 为特定的基于光谱的端点确定逻辑选择参考光谱，以便通过应用特定的基于光谱的端点逻辑来调用端点时实现目标厚度。 该方法包括获得两个或更多个当前光谱。 每个电流光谱是当感兴趣的膜经受抛光步骤并且具有大于目标厚度的电流厚度时，在第二衬底上从感兴趣的膜反射的白光的光谱。 该方法包括为第二基底确定何时已经实现了抛光步骤的终点。
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