公开(公告)号：US20240253177A1

公开(公告)日：2024-08-01

申请号：US18404519

申请日：2024-01-04

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： Yu-Chung SU ,  Lee Melbourne COOK ,  Hyunjin KIM

IPC分类号： B24B37/20

CPC分类号： B24B37/205

摘要： A polishing pad for chemical mechanical polishing comprises a polishing layer having a top polishing surface, a sub-pad located opposite from the top polishing surface, the sub-pad comprising a sub-pad material and having a bottom sub-pad surface defining a bottom surface of the polishing pad, and a window for transmitting a signal wave through the polishing pad to a substrate to be polished and back through the polishing pad for endpoint detection, the window having a top window surface, a bottom window surface, and side edges, wherein the top window surface is recessed from the top polishing surface, the bottom window surface is substantially coplanar with the bottom sub-pad surface, and the side edges are in contact with the polishing material and the sub-pad material.

公开(公告)号：US11883922B2

公开(公告)日：2024-01-30

申请号：US16201546

申请日：2018-11-27

申请人： EBARA CORPORATION

发明人： Yuki Watanabe ,  Keita Yagi

IPC分类号： B24B37/005 ,  B24B37/32 ,  B24B37/013 ,  B24B37/20

CPC分类号： B24B37/005 ,  B24B37/013 ,  B24B37/205 ,  B24B37/32

摘要： A substrate processing apparatus includes a polishing head defining plural pressure chambers D1 to D5 for pressing a wafer W on a polishing pad 42, a pressure control unit performing pressure feedback control by individually controlling pressures in the pressure chambers D1 to D5, a film thickness measurement unit measuring a film thickness distribution of the wafer W being polished, a storage unit storing multiple pieces of information on a preset pressure of the pressure chambers D1 to D5, and a response characteristic acquisition unit changing the preset pressure every time a predetermined condition is satisfied during polishing of the wafer W, measuring a polishing rate applied to the wafer W, and acquiring a response characteristic of the polishing of the wafer W. The response characteristic indicates responsiveness of the polishing of the wafer W to the pressure feedback. The response characteristic is acquired based on the obtained polishing rates.

公开(公告)号：US20230339066A1

公开(公告)日：2023-10-26

申请号：US18215267

申请日：2023-06-28

申请人： Applied Materials, Inc.

发明人： Justin H. WONG ,  Kevin H. SONG

IPC分类号： B24B37/10 ,  B24B49/12 ,  B24B37/20 ,  B24B37/015 ,  B24B37/32 ,  B24B37/013 ,  B24B57/02

CPC分类号： B24B37/013 ,  B24B37/015 ,  B24B37/105 ,  B24B37/205 ,  B24B49/12 ,  B24B57/02 ,  B24B37/32

摘要： A method and apparatus for dispensing polishing fluids and onto a polishing pad within a chemical mechanical polishing (CMP) system are disclosed herein. In particular, embodiments herein relate to a CMP system with a first fluid delivery arm and a second fluid delivery arm disposed over the polishing pad to dispense liquid, such as a polishing fluid or water. The first fluid delivery arm is disposed over at least 50% of the radius of the polishing pad, while the second fluid delivery arm is disposed over less than 50% of the radius of the polishing pad. The second fluid delivery arm is configured to dispense either a polishing fluid or a water onto the polishing pad to effect the polishing rate at the edge of the substrate.

公开(公告)号：US11780057B2

公开(公告)日：2023-10-10

申请号：US16479824

申请日：2018-01-18

申请人： SK enpulse Co., Ltd.

发明人： Joonsung Ryou ,  Tae Kyoung Kwon ,  Jang Won Seo ,  Sunghoon Yun

IPC分类号： B24D18/00 ,  B24B37/20 ,  B24B37/22

CPC分类号： B24D18/0045 ,  B24B37/205 ,  B24B37/22

摘要： Disclosed is a method for producing a polishing pad, the method comprising the steps of: providing a polishing layer; forming a first through-hole penetrating the polishing layer; providing a support layer facing the polishing layer; interposing an adhesive layer between the polishing layer, which has the first through-hole, and support layer, and adhering the polishing layer and support layer to each other by means of the adhesive layer; forming, with the first through-hole as a reference point, a third through-hole penetrating the adhesive layer on a set area thereof, and a second through-hole penetrating the support layer on a set area thereof; and inserting a window inside the first through-hole.

公开(公告)号：US20230278158A1

公开(公告)日：2023-09-07

申请号：US18295250

申请日：2023-04-03

申请人： Applied Materials, Inc.

发明人： Rajkumar Alagarsamy ,  Yongqi Hu ,  Simon Yavelberg ,  Periya Gopalan ,  Christopher R. Mahon

IPC分类号： B24B37/20 ,  B24B37/22 ,  B24B49/12

CPC分类号： B24B37/205 ,  B24B37/22 ,  B24B37/20 ,  B24B49/12

摘要： A polishing article has a polishing surface and an aperture, the aperture including a first section and a second section. The polishing article includes a projection extending inwardly into the aperture. The polishing article includes a lower portion on a side of the first surface farther from the polishing surface. A window has a first portion positioned in the first section of the aperture and a second portion extending into the second section of the aperture. The window has a second surface substantially parallel to the polishing surface. A first adhesive adheres the first surface of the projection to the second surface of the window to secure the window to the projection and a second adhesive of different material composition than the first adhesive. The second adhesive is positioned laterally between the second portion of the window and the lower portion of the polishing article.

公开(公告)号：US20190061094A1

公开(公告)日：2019-02-28

申请号：US15882511

申请日：2018-01-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Kanyu Han ,  Juster Huang ,  Fang-Chi Chien ,  Stone Chen ,  Sheng-Tai Peng

IPC分类号： B24B37/04 ,  B24B37/24 ,  B24B57/02 ,  H01L21/321

CPC分类号： B24B37/042 ,  B24B37/013 ,  B24B37/105 ,  B24B37/12 ,  B24B37/205 ,  B24B37/245 ,  B24B57/02 ,  H01L21/3212 ,  H01L21/7684

摘要： A stopper includes a head portion sized and configured to be coupled to an upper platen of a chemical-mechanical planarization system and a stopper leg sized and configured to direct a flow of liquid slurry applied to an upper planar surface of the upper platen substantially away from a lower surface of the upper platen.

公开(公告)号：US20180304439A1

公开(公告)日：2018-10-25

申请号：US15910187

申请日：2018-03-02

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： Nan-Rong Chiou ,  Mohammad T. Islam ,  George C. Jacob

IPC分类号： B24B37/20 ,  B24B37/24 ,  H01L21/306 ,  H01L21/66

CPC分类号： B24B37/205 ,  B24B37/24 ,  H01L21/30625 ,  H01L22/26

摘要： The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average to molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine or bismuth neodecanoate, all weight percent's based on the total solids weight of the reaction mixture.

公开(公告)号：US10056277B2

公开(公告)日：2018-08-21

申请号：US15357706

申请日：2016-11-21

申请人： EBARA CORPORATION

发明人： Yoichi Kobayashi ,  Yoichi Shiokawa ,  Katsuhide Watanabe

IPC分类号： B24B37/00 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/66 ,  B24B37/013 ,  B24B37/10 ,  B24B37/20 ,  B24B37/32 ,  B24B49/10 ,  B24B49/12

CPC分类号： H01L21/67253 ,  B24B37/013 ,  B24B37/105 ,  B24B37/205 ,  B24B37/32 ,  B24B49/105 ,  B24B49/12 ,  H01L21/31053 ,  H01L21/67092 ,  H01L22/12 ,  H01L22/26

摘要： A polishing method capable of obtaining a stable film thickness without being affected by a difference in measurement position is disclosed. The polishing method includes: rotating a polishing table that supports a polishing pad; pressing the surface of the wafer against the polishing pad; obtaining a plurality of film-thickness signals from a film thickness sensor during a latest predetermined number of revolutions of the polishing pad, the film thickness sensor being installed in the polishing table; determining a plurality of measured film thicknesses from the plurality of film-thickness signals; determining an estimated film thickness at a topmost portion of the raised portion based on the plurality of measured film thicknesses; and monitoring polishing of the wafer based on the estimated film thickness at the topmost portion of the raised portion.

公开(公告)号：US09993907B2

公开(公告)日：2018-06-12

申请号：US14549443

申请日：2014-11-20

申请人： Applied Materials, Inc.

发明人： Laxman Murugesh ,  Kadthala Ramaya Narendrnath

IPC分类号： B24B37/20 ,  B29C71/04 ,  B29C67/20 ,  B24B37/24 ,  B29K75/00 ,  B29K105/04 ,  B29K105/00 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y50/02 ,  B29C35/08 ,  B29C64/112

CPC分类号： B24B37/205 ,  B24B37/24 ,  B29C64/112 ,  B29C67/20 ,  B29C71/04 ,  B29C2035/0822 ,  B29C2035/0827 ,  B29K2075/00 ,  B29K2105/0032 ,  B29K2105/04 ,  B29K2995/0026 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/02 ,  B33Y70/00

摘要： A method of fabricating a polishing pad includes determining a desired distribution of voids to be introduced within a polymer matrix of a polishing layer of the polishing pad. Electronic control signals configured to be read by a 3D printer are generated which specify the locations where a polymer matrix precursor is to be deposited, and specify the locations of the desired distribution of voids where no material is to be deposited. A plurality of layers of the polymer matrix corresponding to the plurality of the first locations is successfully deposited with the 3D printer. Each layer of the plurality of layers of polymer matrix is deposited by ejecting a polymer matrix precursor from a nozzle. The polymer matrix precursor is solidified to form a solidified polymer matrix having the desired distribution of voids.

公开(公告)号：US20180130667A1

公开(公告)日：2018-05-10

申请号：US15564182

申请日：2016-04-05

申请人： EBARA CORPORATION

发明人： Toshifumi KIMBA

IPC分类号： H01L21/304 ,  B24B49/04 ,  B24B49/12 ,  B24B37/013 ,  G01B11/06

CPC分类号： H01L21/304 ,  B24B37/013 ,  B24B37/107 ,  B24B37/205 ,  B24B49/04 ,  B24B49/12 ,  G01B11/06 ,  G01B11/0625 ,  G01B11/0683 ,  H01L22/12 ,  H01L22/26

摘要： The present invention relates to a film-thickness measuring method for detecting a film thickness by analyzing optical information contained in a reflected light from a substrate. The film-thickness measuring method includes producing a spectral waveform indicating a relationship between intensity and wavelength of reflected light from a substrate; performing Fourier transform processing on the spectral waveform to determine strengths of frequency components and corresponding film thicknesses; determining local maximum values (M1, M2) of the strengths of the frequency components; and selecting, according to a preset selection rule, one film thickness from film thicknesses (t1, t2) corresponding respectively to the local maximum values (M1, M2). The selection rule is either to select an N-th largest film thickness or to select an N-th smallest film thickness, and N is a predetermined natural number.