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    METHODS FOR PRODUCING ION EXCHANGED GLASS AND RESULTING APPARATUS
    1.
    发明申请
    METHODS FOR PRODUCING ION EXCHANGED GLASS AND RESULTING APPARATUS 审中-公开
    用于生产离子交换玻璃和结果设备的方法

    公开(公告)号：US20140087193A1

    公开(公告)日：2014-03-27

    申请号：US13626958

    申请日：2012-09-26

    申请人： Jeffrey Scott Cites ,  Thomas Michael Cleary ,  James Gregory Couillard ,  Michael John Moore

    发明人： Jeffrey Scott Cites ,  Thomas Michael Cleary ,  James Gregory Couillard ,  Michael John Moore

    IPC分类号： C03C21/00 ,  B32B17/00

    CPC分类号： B32B17/10119 ,  B32B17/10036 ,  B32B17/10137 ,  B32B17/10761 ,  C03C21/002 ,  Y10T428/315

    摘要： Methods and apparatus provide for performing an ion exchange process by immersing a glass sheet into a molten salt bath at one or more first temperatures for a first period of time such that ions within the glass sheet proximate to a surface thereof are exchanged for larger ions from the molten salt bath, thereby producing: (i) an initial compressive stress (iCS) at the surface of the glass sheet, (ii) an initial depth of compressive layer (iDOL) into the glass sheet, and (iii) an initial central tension (iCT) within the glass sheet; and annealing the glass sheet, after the ion exchange process has been completed, by elevating the glass sheet to one or more second temperatures for a second period of time such that at least one of the initial compressive stress (iCS), the initial depth of compressive layer (iDOL), and the initial central tension (iCT) are modified.

    摘要翻译： 方法和装置提供了通过在一个或多个第一温度下将玻璃板浸入熔融盐浴中进行离子交换过程第一时间段，使得靠近其表面的玻璃板内的离子被更换为较大的离子 熔融盐浴，从而产生：（i）在玻璃板表面的初始压缩应力（iCS），（ii）玻璃板中的初始压缩层深度（iDOL），和（iii）初始中心 玻璃板内的张力（iCT）; 以及退火所述玻璃板，在所述离子交换过程完成之后，通过将所述玻璃板升高至一个或多个第二温度第二时间段，使得所述初始压缩应力（iCS），所述初始压缩应力 压缩层（iDOL）和初始中心张力（iCT）。

    Semiconductor on insulator structure made using radiation annealing
    10.
    发明申请
    Semiconductor on insulator structure made using radiation annealing 失效
    半导体绝缘子结构采用辐射退火制成

    公开(公告)号：US20070281172A1

    公开(公告)日：2007-12-06

    申请号：US11726290

    申请日：2007-03-21

    申请人： James Gregory Couillard ,  Philippe Lehuede ,  Sophie A. Vallon

    发明人： James Gregory Couillard ,  Philippe Lehuede ,  Sophie A. Vallon

    IPC分类号： H01L21/00 ,  B32B9/04 ,  H01L21/324 ,  G21K5/00

    CPC分类号： H01L21/268 ,  G02F2202/09 ,  G02F2202/104 ,  H01L21/302 ,  H01L21/324 ,  H01L21/3247 ,  H01L21/67115 ,  H01L21/7624 ,  H01L21/76254

    摘要： Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI structure further may include subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to an insulator substrate; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to the laser annealing process.

    摘要翻译： 绝缘体上半导体（SOI）结构的系统和方法和产品，包括使至少一个未完成的表面进行激光退火处理。 SOI结构的制造还可以包括使施主半导体晶片的注入表面进行离子注入工艺以在施主半导体晶片中产生剥离层; 将剥离层的注入表面接合到绝缘体基板上; 将剥离层与施主半导体晶片分离，从而暴露至少一个切割表面; 以及对所述至少一个切割表面进行激光退火处理。