公开(公告)号：US06995085B2

公开(公告)日：2006-02-07

申请号：US10346384

申请日：2003-01-17

申请人： Lawrence Lui ,  Chia-Shia Tsai ,  Chao-Cheng Chen ,  Jen-Cheng Liu

发明人： Lawrence Lui ,  Chia-Shia Tsai ,  Chao-Cheng Chen ,  Jen-Cheng Liu

IPC分类号： H01L21/4763

CPC分类号： H01L21/76808

摘要： A method of protecting an underlying diffusion barrier layer in a dual damascene trench and via etch process with a coating of negative photoresist. The dual damascene process starts with via hole etching in an intermetal dielectric (IMD) layer. Next, the thin film barrier layer is deposited and patterned to fill the bottom of the vias. The key process step is a coating of negative photoresist which is exposed and developed to partially fill the via openings. This thick layer of negative photoresist in the vias protects the thin diffusion barrier layer from subsequent dual damascene etch processing.

摘要翻译： 一种在双镶嵌沟槽中保护底层扩散阻挡层的方法，以及通过蚀刻工艺与负性光致抗蚀剂的涂层。 双镶嵌工艺从金属间电介质（IMD）层中的通孔蚀刻开始。 接下来，沉积和图案化薄膜阻挡层以填充通孔的底部。 关键的工艺步骤是负性光致抗蚀剂的涂层，其被暴露和显影以部分填充通孔。 通孔中的这种厚的负光致抗蚀剂层保护了薄的扩散阻挡层免于后续的双镶嵌蚀刻加工。

公开(公告)号：US06297168B1

公开(公告)日：2001-10-02

申请号：US09677068

申请日：2000-09-29

申请人： Jyu-Horng Shieh ,  Jen-Cheng Liu ,  Chao-Cheng Chen ,  Li-Chi Chao ,  Chia-Shia Tsai

发明人： Jyu-Horng Shieh ,  Jen-Cheng Liu ,  Chao-Cheng Chen ,  Li-Chi Chao ,  Chia-Shia Tsai

IPC分类号： H01L213065

CPC分类号： H01L21/7681 ,  H01L21/31116

摘要： Within a method for etching a trench within a silicon oxide layer there is first provided a substrate. There is then formed over the substrate a silicon oxide layer. There is then formed over the silicon oxide layer a masking layer. There is then etched, while employing a plasma etch method in conjunction with the masking layer as an etch mask layer, the silicon oxide layer to form an etched silicon oxide layer defining a trench. Within the method, the plasma etch method employs an etchant gas composition comprising: (1) octafluorocyclobutane; and (2) at least one of carbon tetrafluoride, difluoromethane, hexafluoroethane and oxygen; but excluding (3) a carbon and oxygen containing gas.

摘要翻译： 在氧化硅层内蚀刻沟槽的方法中，首先提供衬底。 然后在衬底上形成氧化硅层。 然后在氧化硅层上形成掩模层。 然后蚀刻，同时使用等离子体蚀刻方法结合掩模层作为蚀刻掩模层，氧化硅层形成蚀刻氧化硅层，限定沟槽。 在该方法中，等离子体蚀刻方法采用蚀刻剂气体组合物，其包含：（1）八氟环丁烷; 和（2）四氟化碳，二氟甲烷，六氟乙烷和氧中的至少一种; 但不包括（3）含碳和含氧气体。

公开(公告)号：US06211063B1

公开(公告)日：2001-04-03

申请号：US09318020

申请日：1999-05-25

申请人： Jen-Cheng Liu ,  Chia-Shia Tsai

发明人： Jen-Cheng Liu ,  Chia-Shia Tsai

IPC分类号： H01L214763

CPC分类号： H01L21/76831 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/7681 ,  H01L21/76835

摘要： A method to form dual damascene structures is described. A first silicon oxynitride layer is deposited overlying a provided substrate. A silicate glass layer is deposited overlying the first silicon oxynitride. A second silicon oxynitride layer is deposited overlying the silicate glass. Photoresist is deposited overlying the second silicon oxynitride and is etched to define areas of planned lower trenches. The second silicon oxynitride layer is etched to expose the top surface of the silicate glass layer. The remaining photoresist layer is etched away. An hydrogen silsesquioxane layer is deposited overlying the second silicon oxynitride and the silicate glass. An oxide layer is deposited overlying the hydrogen silsesquioxane. Photoresist is deposited overlying the oxide and is etched to define areas of planned upper trenches. The oxide layer and the hydrogen silsesquioxane layer are etched by reactive ion etching by a recipe comprising C4F8, CO, Ar, and N2 gases to form the upper trenches. The second silicon oxynitride acts as an etch stop. The silicate glass is etched by reactive ion etching by a recipe comprising C4F8, CO, and Ar gases to form the lower trenches. The first silicon oxynitride acts as an etch stop. A metal layer is deposited filling the trenches. The metal layer is etched back to the top surface of the oxide.

摘要翻译： 描述了形成双镶嵌结构的方法。 第一氧氮化硅层沉积在所提供的衬底上。 沉积覆盖第一氮氧化硅的硅酸盐玻璃层。 第二硅氮化硅层沉积在硅酸盐玻璃上。 光刻胶沉积在第二硅氮氧化物上，并被蚀刻以限定计划中的下沟槽的区域。 蚀刻第二氮氧化硅层以暴露硅酸盐玻璃层的顶表面。 残留的光致抗蚀剂层被蚀刻掉。 沉积在第二氮氧化硅和硅酸盐玻璃上的氢倍半硅氧烷层。 沉积在氢倍半硅氧烷上的氧化物层。 光刻胶沉积在氧化物上并被蚀刻以限定计划的上沟槽的区域。 通过包括C4F8，CO，Ar和N2气体的配方通过反应离子蚀刻来蚀刻氧化物层和氢倍半硅氧烷层，以形成上部沟槽。 第二氮氧化硅用作蚀刻停止。 通过包括C4F8，CO和Ar气体的配方通过反应离子蚀刻来蚀刻硅酸盐玻璃，以形成下沟槽。 第一氮氧化硅用作蚀刻停止。 沉积填充沟槽的金属层。 金属层被回蚀刻到氧化物的顶表面。