公开(公告)号：US07951677B2

公开(公告)日：2011-05-31

申请号：US12894985

申请日：2010-09-30

申请人： Jens Heinrich ,  Thomas Werner ,  Frank Seliger ,  Frank Richter

发明人： Jens Heinrich ,  Thomas Werner ,  Frank Seliger ,  Frank Richter

IPC分类号： H01L21/336

CPC分类号： H01L21/82385 ,  H01L21/28088 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/66583 ,  H01L29/7833

摘要： In a replacement gate approach, a top area of a gate opening has a superior cross-sectional shape which is accomplished on the basis of a plasma assisted etch process or an ion sputter process. During the process, a sacrificial fill material protects sensitive materials, such as a high-k dielectric material and a corresponding cap material. Consequently, the subsequent deposition of a work function adjusting material layer may not result in a surface topography which may result in a non-reliable filling-in of the electrode metal. In some illustrative embodiments, the sacrificial fill material may also be used as a deposition mask for avoiding the deposition of the work function adjusting metal in certain gate openings in which a different type of work function adjusting species is required.

摘要翻译： 在替代栅极方法中，栅极开口的顶部区域具有优异的横截面形状，其基于等离子体辅助蚀刻工艺或离子溅射工艺来实现。 在该过程中，牺牲填充材料保护敏感材料，例如高k电介质材料和对应的帽材料。 因此，随后的功函调整材料层的沉积可能不会导致表面形貌，这可能导致不可靠地填充电极金属。 在一些说明性实施例中，牺牲填充材料也可以用作沉积掩模，以避免功能调节金属沉积在需要不同类型的功能调节物质的某些门开口中。

公开(公告)号：US20110104880A1

公开(公告)日：2011-05-05

申请号：US12894985

申请日：2010-09-30

申请人： Jens Heinrich ,  Thomas Werner ,  Frank Seliger ,  Frank Richter

发明人： Jens Heinrich ,  Thomas Werner ,  Frank Seliger ,  Frank Richter

IPC分类号： H01L21/71

CPC分类号： H01L21/82385 ,  H01L21/28088 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/66583 ,  H01L29/7833

摘要： In a replacement gate approach, a top area of a gate opening has a superior cross-sectional shape which is accomplished on the basis of a plasma assisted etch process or an ion sputter process. During the process, a sacrificial fill material protects sensitive materials, such as a high-k dielectric material and a corresponding cap material. Consequently, the subsequent deposition of a work function adjusting material layer may not result in a surface topography which may result in a non-reliable filling-in of the electrode metal. In some illustrative embodiments, the sacrificial fill material may also be used as a deposition mask for avoiding the deposition of the work function adjusting metal in certain gate openings in which a different type of work function adjusting species is required.

摘要翻译： 在替代栅极方法中，栅极开口的顶部区域具有优异的横截面形状，其基于等离子体辅助蚀刻工艺或离子溅射工艺来实现。 在该过程中，牺牲填充材料保护敏感材料，例如高k电介质材料和对应的帽材料。 因此，随后的功函调整材料层的沉积可能不会导致表面形貌，这可能导致不可靠地填充电极金属。 在一些说明性实施例中，牺牲填充材料也可以用作沉积掩模，以避免功能调节金属沉积在需要不同类型的功能调节物质的某些门开口中。

公开(公告)号：US09822377B2

公开(公告)日：2017-11-21

申请号：US14113844

申请日：2012-04-27

申请人： Alexander Steinkasserer ,  Marcello Stein ,  Thomas Werner ,  Ilka Knippertz

发明人： Alexander Steinkasserer ,  Marcello Stein ,  Thomas Werner ,  Ilka Knippertz

IPC分类号： C12N15/85 ,  C12N15/86

CPC分类号： C12N15/85 ,  C12N15/86 ,  C12N2710/10041

摘要： The present invention provides a mutant CD83 promoter comprising the promoter/enhancer regions of human CD83 promoter and being dendritic cell-specific, and the use thereof, specifically for the treatment or prevention of diseases or medical conditions related to malignancy, autoimmunity or prevention of transplant rejections.

公开(公告)号：US09272732B2

公开(公告)日：2016-03-01

申请号：US14347822

申请日：2012-09-10

申请人： Roland Greul ,  Thomas Werner ,  Joerg Strecker

发明人： Roland Greul ,  Thomas Werner ,  Joerg Strecker

IPC分类号： B62D15/02 ,  B62D6/00

CPC分类号： B62D15/0225 ,  B62D6/008

摘要： A method for determining a rack force for a steering apparatus of a vehicle, in which the rack force is determined as a function of a steering angle variable which characterizes an actual wheel steering angle or a set point of the wheel steering angle. In order to specify a method for determining a rack force, with which a target steering torque can be generated such that a comfortable steering feel is imparted to the driver and the steering apparatus nevertheless gives the driver feedback that is as realistic as possible regarding the motion state of the vehicle, the method comprises: determining a variable which characterizes a lateral force on a shaft of the steering apparatus, and determining the rack force as a function of the lateral force, wherein the determination of the rack force comprises a filtering by means of a signal processing element having a proportional-differential transfer function.

摘要翻译： 一种用于确定车辆转向装置的齿条力的方法，其中机架力被确定为表征车轮转向角的实际车轮转向角或设定点的转向角变量的函数。 为了确定用于确定机架力的方法，通过该方法可以产生目标转向扭矩，使得向驾驶员和转向装置赋予舒适的转向感，然而给予驾驶员对于运动尽可能现实的反馈 该方法包括：确定表征转向装置的轴上的横向力的变量，以及确定作为横向力的函数的齿条力，其中机架力的确定包括通过装置的过滤 具有比例差分传递函数的信号处理元件。

公开(公告)号：US09174673B2

公开(公告)日：2015-11-03

申请号：US14116790

申请日：2012-07-16

申请人： Joerg Strecker ,  Thomas Werner

发明人： Joerg Strecker ,  Thomas Werner

IPC分类号： B62D11/00 ,  B62D55/02 ,  B62D6/04 ,  B62D6/00

CPC分类号： B62D6/04 ,  B62D6/008

摘要： A method for determining a steering rack force (FR) for a steering system of a vehicle, in which a first steering rack force (RFD) is ascertained as a function of at least one force that occurs in the steering system or at least one torque (tor_RA) that occurs in the steering system. So as to provide less strong feedback on the force conditions in the steering system for reasons of driving comfort, in particular when this is currently not required, it is proposed to ascertain a second steering rack force (RFC) as a function of at least one vehicle variable (v, ang_RA), which characterizes the state of movement of the vehicle, and to generate a resulting steering rack force (FR) based on the first steering rack force (RFD) and the second steering rack force (RFC).

摘要翻译： 一种用于确定用于车辆的转向系统的转向齿条力（FR）的方法，其中第一转向齿条力（RFD）被确定为在转向系统中发生的至少一个力的函数或至少一个扭矩 （tor_RA）发生在转向系统中。 为了提供驾驶舒适性的原因，对转向系统的力条件提供较少的强烈反馈，特别是当目前不需要时，建议确定第二转向架力（RFC）作为至少一个 车辆变量（v，ang_RA），其表征车辆的运动状态，并且基于第一转向齿条力（RFD）和第二转向齿条力（RFC）产生所产生的转向齿条力（FR）。

公开(公告)号：US08788147B2

公开(公告)日：2014-07-22

申请号：US13317281

申请日：2011-10-13

申请人： Joerg Strecker ,  Thomas Werner

发明人： Joerg Strecker ,  Thomas Werner

IPC分类号： B62D6/00

CPC分类号： B62D6/008 ,  B62D5/0472 ,  G01L5/221

摘要： Disclosed is a method for determining a toothed rack force on a steering device in a vehicle, wherein the toothed rack force (forZS) is determined as a function of a plurality of models, and wherein a component (forESM) of the toothed rack force (forZS) which relates to a driving process is generated by means of a first model, and a component of the toothed rack force (forZS) which relates to a parking process is generated by means of a second model.

摘要翻译： 公开了一种用于确定车辆中的转向装置上的齿条力的方法，其中，齿条力（forZS）被确定为多个模型的函数，并且其中齿条力的分量（forESM） forZS）通过第一模型产生，并且通过第二模型生成与驻车过程相关的齿条力（forZS）的分量。

公开(公告)号：US20140050748A1

公开(公告)日：2014-02-20

申请号：US14113844

申请日：2012-04-27

申请人： Alexander Steinkasserer ,  Marcello Stein ,  Thomas Werner ,  Ilka Knippertz

发明人： Alexander Steinkasserer ,  Marcello Stein ,  Thomas Werner ,  Ilka Knippertz

IPC分类号： C12N15/85

CPC分类号： C12N15/85 ,  C12N15/86 ,  C12N2710/10041

摘要： The present invention provides a mutant CD83 promoter comprising the promoter/enhancer regions of human CD83 promoter and being dendritic cell-specific, and the use thereof, specifically for the treatment or prevention of diseases or medical conditions related to malignancy, autoimmunity or prevention of transplant rejections.

摘要翻译： 本发明提供了包含人CD83启动子的启动子/增强子区并且是树突状细胞特异性的突变体CD83启动子，以及其用于治疗或预防与恶性肿瘤，自身免疫或预防移植有关的疾病或医学病症的用途 拒绝

公开(公告)号：US08652341B2

公开(公告)日：2014-02-18

申请号：US12433128

申请日：2009-04-30

申请人： Thomas Gessner ,  Andreas Bertz ,  Reinhard Schubert ,  Thomas Werner ,  Wolfgang Hentsch ,  Reinhard Fendler ,  Lutz Koehler

发明人： Thomas Gessner ,  Andreas Bertz ,  Reinhard Schubert ,  Thomas Werner ,  Wolfgang Hentsch ,  Reinhard Fendler ,  Lutz Koehler

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： C03C15/00 ,  C03C23/006 ,  C03C2204/08

摘要： A method and an apparatus for forming a structure on a component made of a material composed of silicon oxide, especially of silicate glass, glass ceramic or quartz, wherein in accordance with the process at least a first surface of the component a partial removal of the material by plasma etching takes place and during the plasma etching at least at the surface to be etched a substrate temperature is established which is substantially greater than 90° C. but less than the softening temperature of the material. The apparatus is equipped for this purpose with a heater for generating the substrate temperature.

摘要翻译： 一种用于在由氧化硅，特别是硅酸盐玻璃，玻璃陶瓷或石英组成的材料制成的部件上形成结构的方法和装置，其中根据该方法至少部件的第一表面部分去除 通过等离子体蚀刻发生材料，并且在等离子体蚀刻期间，至少在要蚀刻的表面处建立基板温度，其基本上大于90℃但小于材料的软化温度。 该装置为此用于产生衬底温度的加热器。

公开(公告)号：US08609524B2

公开(公告)日：2013-12-17

申请号：US12894469

申请日：2010-09-30

申请人： Kai Frohberg ,  Frank Feustal ,  Thomas Werner

发明人： Kai Frohberg ,  Frank Feustal ,  Thomas Werner

IPC分类号： H01L21/3205 ,  H01L21/4763 ,  H01L21/8238

CPC分类号： H01L29/7843 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76841 ,  H01L21/84 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833

摘要： In sophisticated semiconductor devices, the integrity of the device level may be enhanced after applying a replacement gate approach by providing an additional diffusion barrier layer, such as a silicon nitride layer, thereby obtaining a similar degree of diffusion blocking capabilities as in semiconductor devices without performing a replacement gate approach.

摘要翻译： 在复杂的半导体器件中，通过提供附加的扩散阻挡层（例如氮化硅层）应用替换栅极方法之后，器件电平的完整性可以被增强，从而获得与半导体器件相似的扩散阻挡能力，而不执行 替代门方法。

公开(公告)号：US08420533B2

公开(公告)日：2013-04-16

申请号：US12939424

申请日：2010-11-04

申请人： Robert Seidel ,  Thomas Werner

发明人： Robert Seidel ,  Thomas Werner

IPC分类号： H01L21/44

CPC分类号： H01L21/76804 ,  H01L21/31144 ,  H01L21/76811

摘要： In sophisticated metallization systems, vertical contacts and metal lines may be formed on the basis of a dual inlaid strategy, wherein an edge rounding or corner rounding may be applied to the trench hard mask prior to forming the via openings on the basis of a self-aligned via trench concept. Consequently, self-aligned interconnect structures may be obtained, while at the same time providing superior fill conditions during the deposition of barrier materials and conductive fill materials.

摘要翻译： 在复杂的金属化系统中，可以基于双嵌入式策略形成垂直触点和金属线，其中可以在形成通孔之前，将边缘圆形或圆角圆化施加到沟槽硬掩模， 通过沟槽概念对齐。 因此，可以获得自对准的互连结构，同时在阻挡材料和导电填充材料的沉积期间提供优异的填充条件。