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    Electrostatically actuated micro-mechanical switching device
    3.
    发明授权
    Electrostatically actuated micro-mechanical switching device 有权
    静电致动微机械开关装置

    公开(公告)号：US08610520B2

    公开(公告)日：2013-12-17

    申请号：US13155002

    申请日：2011-06-07

    申请人： Joerg Froemel ,  Thomas Gessner ,  Christian Kaufmann ,  Stefan Leidich ,  Markus Nowack ,  Steffen Kurth ,  Andreas Bertz ,  Koichi Ikeda ,  Akira Akiba

    发明人： Joerg Froemel ,  Thomas Gessner ,  Christian Kaufmann ,  Stefan Leidich ,  Markus Nowack ,  Steffen Kurth ,  Andreas Bertz ,  Koichi Ikeda ,  Akira Akiba

    IPC分类号： H01H51/22 ,  H01P1/10

    CPC分类号： H01H59/0009 ,  H01H1/20 ,  H01H2001/0078 ,  H01P1/127

    摘要： An electrostatically actuated micro-mechanical switching device with movable elements formed in the bulk of a substrate for closing and releasing at least one Ohmic contact by a horizontal movement of the movable elements in a plane of the substrate. The switching device has a drive with comb-shaped electrodes including fixed driving electrodes and movable electrodes. A movable push rod is mechanically connected with the movable electrodes, extends through the electrodes, has a movable contact element at one side, and at least one restoring spring. A signal line has two parts interrupted by a gap. The micro-mechanical switching device is in shunt-configuration with low loss, high isolation in a wide frequency range, low switching time at low actuation voltage and sufficient reliability. The line impedance of the signal line and its variation is as small as possible. The switching device is in shunt-configuration for closing and releasing the Ohmic contact between a ground line and the signal line. The contact element has a movable contact beam extending at least partially opposite to the signal line and being electrically and mechanically connected to both parts of the signal line, respectively. The ground line is formed with a contact bar that leads through the gap of the signal line for forming the Ohmic contact between the contact beam and the ground line. A contact metallization is provided at least on top and on the side walls of the contact beam, of the signal line and of the ground line.

    摘要翻译： 一种静电致动的微机械开关装置，其具有形成在基板的主体中的可移动元件，用于通过可移动元件在基板的平面中的水平移动来闭合和释放至少一个欧姆接触。 开关装置具有带有固定驱动电极和可动电极的梳状电极的驱动器。 可移动推杆与可动电极机械连接，延伸穿过电极，在一侧具有可动接触元件，以及至少一个复位弹簧。 信号线有两个部分被间隙中断。 微机械开关器件处于分流配置，具有低损耗，在宽频率范围内的高隔离度，低致动电压下的低开关时间和足够的可靠性。 信号线的线路阻抗及其变化尽可能小。 开关器件处于分流配置，用于闭合和释放接地线与信号线之间的欧姆接触。 接触元件具有至少部分地与信号线相对延伸并且分别电信号和机械地连接到信号线的两个部分的可动接触梁。 接地线形成有接触杆，其通过信号线的间隙，以形成接触梁和接地线之间的欧姆接触。 接触金属化至少在信号线和接地线的接触梁的顶部和侧壁上提供。

    Microstructure and method for the production thereof
    4.
    发明授权
    Microstructure and method for the production thereof 失效
    微结构及其制造方法

    公开(公告)号：US06969628B2

    公开(公告)日：2005-11-29

    申请号：US10296771

    申请日：2001-06-13

    申请人： Andreas Bertz ,  Thomas Gessner ,  Matthias Küchler ,  Roman Knöfler

    发明人： Andreas Bertz ,  Thomas Gessner ,  Matthias Küchler ,  Roman Knöfler

    IPC分类号： B81B3/00 ,  B81C1/00 ,  H01L21/00

    CPC分类号： B81B3/0086 ,  B81B2203/033 ,  B81C2201/016

    摘要： The invention relates to a microstructure in a preferably electrically conductive substrate (1), more specifically made of doped single crystal silicon, with at least one functional unit (2.1, 2.2) and to a method of fabricating the same. In accordance with the invention, the functional unit (2.1, 2.2) is mechanically and electrically separated from the substrate (1) on all sides by means of isolation gaps (5, 5a) and is connected, on at least one site, to a first structure (4a) of an electrically conductive layer (S) that is electrically isolated from the substrate (1) by way of an isolation layer (3) and that secures the unit into position relative to the substrate (1). For this purpose, the functional unit (2.1, 2.2) is released from the substrate (1) in such a manner that the isolation gaps (5, 5a) are provided on all sides relative to the substrate (1). The electrically conductive layer (S) is applied in such a manner that it is connected through contact fingers (4a) for example to the functional unit (2.1, 2.2) which it secures into position. The method in accordance with the invention permits to substantially facilitate the manufacturing process and to produce a microstructure with but small parasitic capacitances.

    摘要翻译： 本发明涉及在具有至少一个功能单元（2.1,2.2）的优选导电衬底（1）中，更具体地由掺杂单晶硅制成的微观结构及其制造方法。 根据本发明，通过隔离间隙（5,5a），功能单元（2.1,2.2）在所有侧面上与基板​​（1）机械地和电气地分开，并且在至少一个位置连接到 通过隔离层（3）与衬底（1）电绝缘的导电层（S）的第一结构（4a），并且将单元固定在相对于衬底（1）的位置。 为此，功能单元（2.1,2.2）以这样的方式从基板（1）释放，使得隔离间隙（5,5a）相对于基板（1）设置在所有侧面上。 导电层（S）以这样的方式被施加，使得它通过接触指状物（4a）例如连接到功能单元（2.1,2.2）上，其被固定到位。 根据本发明的方法允许基本上方便制造过程并产生具有小的寄生电容的微结构。

    Vertical transistor comprising a mobile gate and a method for the production thereof
    5.
    发明授权
    Vertical transistor comprising a mobile gate and a method for the production thereof 失效
    包括移动门的垂直晶体管及其制造方法

    公开(公告)号：US06849912B2

    公开(公告)日：2005-02-01

    申请号：US10311759

    申请日：2001-04-26

    申请人： Andreas Bertz ,  Steffen Heinz ,  Thomas Gessner

    发明人： Andreas Bertz ,  Steffen Heinz ,  Thomas Gessner

    IPC分类号： B81B3/00 ,  G01L9/00 ,  G01P15/08 ,  G01P15/12 ,  H01L21/336 ,  H01L29/78 ,  H01L29/84 ,  H01L29/82

    CPC分类号： H01L29/84 ,  G01L9/0098 ,  G01P15/0802 ,  G01P15/124

    摘要： What is proposed is a vertical field effect transistor produced from a semiconductor wafer, comprising a residual transistor composed of a source zone, a channel zone and a drain zone, as well as a movable gate structure disposed by means of at least one flexible suspension in front of said channel zone and spaced therefrom, which is characterized by the provision that the movable gate structure consists of the material of said semiconductor wafer. The suspensions of the movable structure preferably present a high ratio of their height to their width, such that the movable gate may preferably move in the wafer plane.

    摘要翻译： 提出的是由半导体晶片制造的垂直场效应晶体管，其包括由源极区，沟道区和漏极区组成的残余晶体管，以及通过至少一个柔性悬浮体设置的可移动栅极结构 所述通道区域的前部并与其间隔开，其特征在于，所述可移动栅极结构由所述半导体晶片的材料构成。 可移动结构的悬架优选地将其高度与其宽度的高比率呈现，使得可移动门优选地在晶片平面中移动。

    Phenothiazines, S-oxides, and S,S-dioxides as well as phenoxazines as emitters for OLEDs
    9.
    发明授权
    Phenothiazines, S-oxides, and S,S-dioxides as well as phenoxazines as emitters for OLEDs 有权
    吩噻嗪，S-氧化物和S，S-二氧化物以及吩恶嗪作为OLED的发射体

    公开(公告)号：US08029919B2

    公开(公告)日：2011-10-04

    申请号：US11720274

    申请日：2005-11-25

    申请人： Thomas Gessner ,  Hans-Werner Schmidt ,  Mukundan Thelakkat ,  Markus Baete

    发明人： Thomas Gessner ,  Hans-Werner Schmidt ,  Mukundan Thelakkat ,  Markus Baete

    IPC分类号： H01L51/00

    CPC分类号： C09K11/06 ,  C07D279/26 ,  C07D279/28 ,  C07D279/34 ,  C07D417/04 ,  C07D417/10 ,  C09B19/00 ,  C09B21/00 ,  C09B23/141 ,  C09B23/145 ,  C09K2211/1033 ,  C09K2211/1037 ,  C09K2211/1044 ,  C09K2211/185 ,  H01L51/005 ,  H01L51/0052 ,  H01L51/0059 ,  H01L51/0072 ,  H01L51/0085 ,  H01L51/5012 ,  H01L51/5096 ,  H01L2251/308 ,  H05B33/14 ,  Y10S428/917

    摘要： The use of phenoxazine, phenothiazine, phenothiazine S-oxide or phenothiazine S,S-dioxide derivatives as emitter substances in organic light-emitting diodes, an organic light-emitting diode comprising a light-emitting layer, the light-emitting layer comprising at least one phenoxazine, phenothiazine, phenothiazine S-oxide or phenothiazine S,S-dioxide derivative as an emitter substance, and a light-emitting layer comprising or consisting of the aforementioned phenoxazine, phenothiazine-phenothiazine, phenothiazine S-oxide or phenothiazine S,S-dioxide derivative as an emitter substance, a hole- and exciton-blocking layer comprising or consisting of the aforementioned phenoxazine derivative, phenothiazine derivative, phenothiazine S-oxide derivative or phenothiazine S,S-dioxide derivative, and a device which comprises an inventive organic light-emitting diode. The present invention further relates to specific phenothiazine S,S-dioxide derivatives, phenothiazine S-oxide derivatives and phenothiazine derivatives and production processes thereof, and to their use in organic light-emitting diodes.

    摘要翻译： 在有机发光二极管中使用吩恶嗪，吩噻嗪，吩噻嗪S-氧化物或吩噻嗪S，S-二氧化物衍生物作为发射物质，包含发光层的有机发光二极管，至少包含发光层 一种吩恶嗪，吩噻嗪，吩噻嗪S-氧化物或吩噻嗪S，S-二氧化物衍生物作为发射体物质，以及由上述吩恶嗪，吩噻嗪 - 吩噻嗪，吩噻嗪S-氧化物或吩噻嗪S组成或组成的发光层，S- 作为发射体物质的二氧化物衍生物，包含前述吩恶嗪衍生物，吩噻嗪衍生物，吩噻嗪S-氧化物衍生物或吩噻嗪S，S-二氧化物衍生物或包含本发明有机光的器件的空穴 - 和激子阻断层 发光二极管。 本发明还涉及特定的吩噻嗪S，S-二氧化物衍生物，吩噻嗪S-氧化物衍生物和吩噻嗪衍生物及其制备方法，以及它们在有机发光二极管中的应用。