摘要:
A method and an apparatus for forming a structure on a component made of a material composed of silicon oxide, especially of silicate glass, glass ceramic or quartz, wherein in accordance with the process at least a first surface of the component a partial removal of the material by plasma etching takes place and during the plasma etching at least at the surface to be etched a substrate temperature is established which is substantially greater than 90° C. but less than the softening temperature of the material. The apparatus is equipped for this purpose with a heater for generating the substrate temperature.
摘要:
An inductively coupled plasma processing apparatus (100) comprises a plasma chamber (12) with a dielectric window (400) forming a self-supporting wall element of the plasma chamber (12). The dielectric window (400) has an external and an internal side with respect to the chamber (12). An electromagnetic field source (140) is arranged in front of the external side of the dielectric window (400) for generating an electromagnetic field within the plasma chamber (12). The field source comprises at least one magnetic core (301, 302, 303). The at least one magnetic core (301, 302, 303) is attached to the external side of the dielectric window (400), such that the at least one magnetic core helps the dielectric window (400) to withstand collapsing forces caused by negative pressure inside said chamber during operation.
摘要:
A method and an apparatus for forming a structure on a component made of a material composed of silicon oxide, especially of silicate glass, glass ceramic or quartz, wherein in accordance with the process at least a first surface of the component a partial removal of the material by plasma etching takes place and during the plasma etching at least at the surface to be etched a substrate temperature is established which is substantially greater than 90° C. but less than the softening temperature of the material. The apparatus is equipped for this purpose with a heater for generating the substrate temperature.
摘要:
An inductively coupled plasma processing apparatus (100) comprises a plasma chamber (12) with a dielectric window (400) forming a self-supporting wall element of the plasma chamber (12). The dielectric window (400) has an external and an internal side with respect to the chamber (12). An electromagnetic field source (140) is arranged in front of the external side of the dielectric window (400) for generating an electromagnetic field within the plasma chamber (12). The field source comprises at least one magnetic core (301, 302, 303). The at least one magnetic core (301, 302, 303) is attached to the external side of the dielectric window (400), such that the at least one magnetic core helps the dielectric window (400) to withstand collapsing forces caused by negative pressure inside said chamber during operation.