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1.发明申请SEMICONDUCTOR INTEGRATED CIRCUITS INCLUDING OPTOELECTRONIC DEVICE FOR CHANGING OPTICAL PHASE 有权半导体集成电路，包括用于改变光学相位的光电器件公开(公告)号：US20100278477A1
公开(公告)日：2010-11-04
申请号：US12746167
申请日：2008-06-03
申请人： Jeong-Woo Park , Gyung-Ock Kim , Mi-Ran Park , Jong-Bum You
发明人： Jeong-Woo Park , Gyung-Ock Kim , Mi-Ran Park , Jong-Bum You
CPC分类号： G02F1/218 , G02F2001/212 , G02F2201/302
摘要： Provided is a semiconductor integrated circuit. The semiconductor integrated circuit includes a semiconductor pattern disposed on a substrate and including an optical waveguide part and a pair of recessed portions. The optical waveguide part has a thickness ranging from about 0.05 m to about 0.5 μm. The recessed portions are disposed on both sides of the optical waveguide part and have a thinner thickness than the optical waveguide part. A first doped region and a second doped region are disposed in the recessed portions, respectively. The first and second doped regions are doped with a first conductive type dopant and a second conductive type dopant, respectively. An intrinsic region is formed in at least the optical waveguide part to contact the first and second doped regions.
摘要翻译： 提供了一种半导体集成电路。 半导体集成电路包括设置在基板上并且包括光波导部分和一对凹部的半导体图案。 光波导部分的厚度范围为约0.05μm至约0.5μm。 凹部设置在光波导部分的两侧，并且具有比光波导部分更薄的厚度。 第一掺杂区域和第二掺杂区域分别设置在凹部中。 第一和第二掺杂区域分别掺杂有第一导电型掺杂剂和第二导电型掺杂剂。 在至少光波导部分中形成本征区域以接触第一和第二掺杂区域。
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2.发明授权Semiconductor integrated circuits including optoelectronic device for changing optical phase 有权包括用于改变光学相位的光电器件的半导体集成电路公开(公告)号：US08422834B2
公开(公告)日：2013-04-16
申请号：US12746167
申请日：2008-06-03
申请人： Jeong-Woo Park , Gyung-Ock Kim , Mi-Ran Park , Jong-Bum You
发明人： Jeong-Woo Park , Gyung-Ock Kim , Mi-Ran Park , Jong-Bum You
CPC分类号： G02F1/218 , G02F2001/212 , G02F2201/302
摘要： Provided is a semiconductor integrated circuit. The semiconductor integrated circuit includes a semiconductor pattern disposed on a substrate and including an optical waveguide part and a pair of recessed portions. The optical waveguide part has a thickness ranging from about 0.05 μm to about 0.5 μm. The recessed portions are disposed on both sides of the optical waveguide part and have a thinner thickness than the optical waveguide part. A first doped region and a second doped region are disposed in the recessed portions, respectively. The first and second doped regions are doped with a first conductive type dopant and a second conductive type dopant, respectively. An intrinsic region is formed in at least the optical waveguide part to contact the first and second doped regions.
摘要翻译： 提供了一种半导体集成电路。 半导体集成电路包括设置在基板上并且包括光波导部分和一对凹部的半导体图案。 光波导部分的厚度范围为约0.05μm至约0.5μm。 凹部设置在光波导部分的两侧，并且具有比光波导部分更薄的厚度。 第一掺杂区域和第二掺杂区域分别设置在凹部中。 第一和第二掺杂区域分别掺杂有第一导电型掺杂剂和第二导电型掺杂剂。 在至少光波导部分中形成本征区域以接触第一和第二掺杂区域。
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