Light emitting device having multi-pattern structure and method of manufacturing same
    1.
    发明授权
    Light emitting device having multi-pattern structure and method of manufacturing same 有权
    具有多图案结构的发光器件及其制造方法

    公开(公告)号:US08013354B2

    公开(公告)日:2011-09-06

    申请号:US11737479

    申请日:2007-04-19

    IPC分类号: H01L29/22

    CPC分类号: H01L33/22 H01L33/007

    摘要: A semiconductor light emitting device having a multiple pattern structure greatly increases light extraction efficiency. The semiconductor light emitting device includes a substrate and a semiconductor layer, an active layer, and an electrode layer formed on the substrate, a first pattern defining a first corrugated structure between the substrate and the semiconductor layer, and a second pattern defining a second corrugated structure on the first corrugated structure of the first pattern.

    摘要翻译: 具有多重图案结构的半导体发光器件大大提高了光提取效率。 半导体发光器件包括衬底和半导体层,有源层和形成在衬底上的电极层,在衬底和半导体层之间限定第一波纹结构的第一图案和限定第二波纹状的第二图案 结构上第一个波纹结构的第一个图案。

    Light emitting diode and method of manufacturing the same
    2.
    发明申请
    Light emitting diode and method of manufacturing the same 审中-公开
    发光二极管及其制造方法

    公开(公告)号:US20070176191A1

    公开(公告)日:2007-08-02

    申请号:US11511366

    申请日:2006-08-29

    申请人: Jin-seo Im

    发明人: Jin-seo Im

    IPC分类号: H01L33/00

    摘要: A light emitting diode having high light extraction efficiency and a method of manufacturing the same are provided. The LED includes a semiconductor multiple layer including an active layer; a transparent electrode layer formed on the semiconductor multiple layer; and refraction field unit embedded in the transparent electrode layer and formed of a material having a different refractive index than the transparent electrode layer. The method of manufacturing the LED includes: crystallizing and growing a semiconductor multiple layer having an active layer on a substrate; evaporating a first transparent electrode layer onto the semiconductor multiple layer; forming a plurality of grooves in the first transparent electrode layer by patterning and etching the first transparent electrode layer; and evaporating a second transparent electrode layer onto the first transparent electrode layer at an angle to the grooves to form cavities filled with air between the first transparent electrode layer and the second transparent electrode layer.

    摘要翻译: 提供了具有高光提取效率的发光二极管及其制造方法。 LED包括包括有源层的半导体多层; 形成在所述半导体多层上的透明电极层; 以及折射场单元,其被嵌入在透明电极层中,并且由折射率不同于透明电极层的材料形成。 制造LED的方法包括:在衬底上结晶和生长具有活性层的半导体多层; 将第一透明电极层蒸发到所述半导体多层上; 通过图案化和蚀刻第一透明电极层在第一透明电极层中形成多个凹槽; 并且将第二透明电极层以与沟槽成一定角度的方式蒸发到第一透明电极层上,以在第一透明电极层和第二透明电极层之间形成充满空气的空腔。

    Light emitting diode and method of manufacturing the same
    3.
    发明授权
    Light emitting diode and method of manufacturing the same 失效
    发光二极管及其制造方法

    公开(公告)号:US07989239B2

    公开(公告)日:2011-08-02

    申请号:US12470976

    申请日:2009-05-22

    申请人: Jin-seo Im

    发明人: Jin-seo Im

    IPC分类号: H01L21/00

    摘要: A light emitting diode having high light extraction efficiency and a method of manufacturing the same are provided. The LED includes a semiconductor multiple layer including an active layer; a transparent electrode layer formed on the semiconductor multiple layer; and refraction field unit embedded in the transparent electrode layer and formed of a material having a different refractive index than the transparent electrode layer. The method of manufacturing the LED includes: crystallizing and growing a semiconductor multiple layer having an active layer on a substrate; evaporating a first transparent electrode layer onto the semiconductor multiple layer; forming a plurality of grooves in the first transparent electrode layer by patterning and etching the first transparent electrode layer; and evaporating a second transparent electrode layer onto the first transparent electrode layer at an angle to the grooves to form cavities filled with air between the first transparent electrode layer and the second transparent electrode layer.

    摘要翻译: 提供了具有高光提取效率的发光二极管及其制造方法。 LED包括包括有源层的半导体多层; 形成在所述半导体多层上的透明电极层; 以及折射场单元,其被嵌入在透明电极层中,并且由折射率不同于透明电极层的材料形成。 制造LED的方法包括:在衬底上结晶和生长具有活性层的半导体多层; 将第一透明电极层蒸发到半导体多层上; 通过图案化和蚀刻第一透明电极层在第一透明电极层中形成多个凹槽; 并且将第二透明电极层以与沟槽成一定角度的方式蒸发到第一透明电极层上,以在第一透明电极层和第二透明电极层之间形成充满空气的空腔。

    LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 失效
    发光二极管及其制造方法

    公开(公告)号:US20090286339A1

    公开(公告)日:2009-11-19

    申请号:US12470976

    申请日:2009-05-22

    申请人: Jin-seo Im

    发明人: Jin-seo Im

    IPC分类号: H01L21/00

    摘要: A light emitting diode having high light extraction efficiency and a method of manufacturing the same are provided. The LED includes a semiconductor multiple layer including an active layer; a transparent electrode layer formed on the semiconductor multiple layer; and refraction field unit embedded in the transparent electrode layer and formed of a material having a different refractive index than the transparent electrode layer. The method of manufacturing the LED includes: crystallizing and growing a semiconductor multiple layer having an active layer on a substrate; evaporating a first transparent electrode layer onto the semiconductor multiple layer; forming a plurality of grooves in the first transparent electrode layer by patterning and etching the first transparent electrode layer; and evaporating a second transparent electrode layer onto the first transparent electrode layer at an angle to the grooves to form cavities filled with air between the first transparent electrode layer and the second transparent electrode layer.

    摘要翻译: 提供了具有高光提取效率的发光二极管及其制造方法。 LED包括包括有源层的半导体多层; 形成在所述半导体多层上的透明电极层; 以及折射场单元,其被嵌入在透明电极层中,并且由折射率不同于透明电极层的材料形成。 制造LED的方法包括:在衬底上结晶和生长具有活性层的半导体多层; 将第一透明电极层蒸发到半导体多层上; 通过图案化和蚀刻第一透明电极层在第一透明电极层中形成多个凹槽; 并且将第二透明电极层以与沟槽成一定角度的方式蒸发到第一透明电极层上,以在第一透明电极层和第二透明电极层之间形成充满空气的空腔。