公开(公告)号：US20080036820A1

公开(公告)日：2008-02-14

申请号：US11575258

申请日：2005-11-28

申请人： Ji Yang ,  Jeong Oh ,  Suk Lee ,  Sang Han ,  Han Ko ,  Do Byun ,  Yong Kim ,  Sang Son

发明人： Ji Yang ,  Jeong Oh ,  Suk Lee ,  Sang Han ,  Han Ko ,  Do Byun ,  Yong Kim ,  Sang Son

IPC分类号： B41J2/06

CPC分类号： B41J2/06

摘要： Disclosed herein is an apparatus for jetting droplets using an electrostatic field, the apparatus includes a body, a chamber, an actuator, a nozzle, and a pillar-shaped member. The body is configured to contain and support a chamber, an actuator, a nozzle, and a pillar-shaped member and configured. The chamber is formed to have a predetermined volume in the body and accommodate a predetermined amount of fluid. The actuator is formed on the body, and configured to jet the fluid accommodated in the chamber using a controllable electrostatic field. The nozzle is configured to pass through the upper portion of the chamber and the central portion of the actuator, and to allow the fluid accommodated in the chamber to flow therethrough. The pillar-shaped member is located in a direction extending from the longitudinal central axis of the nozzle, and is configured to be electrically grounded and guide the fluid to smoothly flow to the inlet of the nozzle.

摘要翻译： 本文公开了一种使用静电场喷射液滴的装置，该装置包括主体，腔室，致动器，喷嘴和柱状构件。 主体构造成容纳和支撑腔室，致动器，喷嘴和柱状构件并构造。 腔室形成为在体内具有预定的体积，并适应预定量的流体。 致动器形成在主体上，并且构造成使用可控制的静电场喷射容纳在腔室中的流体。 喷嘴构造成穿过腔室的上部和致动器的中心部分，并且允许容纳在腔室中的流体流过其中。 柱状构件位于从喷嘴的纵向中心轴线延伸的方向上，并且被配置为电接地并引导流体平稳地流到喷嘴的入口。

公开(公告)号：US20060145288A1

公开(公告)日：2006-07-06

申请号：US11322865

申请日：2005-12-29

申请人： Han Ko

发明人： Han Ko

IPC分类号： H01L29/00 ,  H01L21/76

CPC分类号： H01L21/76224

摘要： A method of forming a shallow trench isolation (STI) of a semiconductor device is disclosed. The method includes the steps of (a) serially forming a pad oxide layer and a pad nitride layer on a silicon substrate, and serially etching the pad nitride layer, the pad oxide layer, and the silicon substrate to form a first trench on the silicon substrate, (b) selectively forming an epitaxial silicon layer on a silicon surface in the first trench to form a second trench, and (c) filling inner walls of the second trench with a Chemical Vapor Deposition (CVD) oxide. Herein, a size of the second trench may be smaller than a size of the first trench. Thus, a trench may have a size smaller than the size of a corresponding photoresist layer pattern, thereby facilitating formation of an STI structure having a relatively fine line width.

摘要翻译： 公开了形成半导体器件的浅沟槽隔离（STI）的方法。 该方法包括以下步骤：（a）在硅衬底上串联形成衬垫氧化物层和衬垫氮化物层，并且串联蚀刻衬垫氮化物层，焊盘氧化物层和硅衬底，以在硅上形成第一沟槽 衬底，（b）在所述第一沟槽中的硅表面上选择性地形成外延硅层以形成第二沟槽，以及（c）用化学气相沉积（CVD）氧化物填充所述第二沟槽的内壁。 这里，第二沟槽的尺寸可以小于第一沟槽的尺寸。 因此，沟槽的尺寸可以小于对应的光致抗蚀剂层图案的尺寸，从而有助于形成具有较细线宽的STI结构。