公开(公告)号：US08772864B2

公开(公告)日：2014-07-08

申请号：US13807612

申请日：2011-11-29

Applicant: Jiakun Wang

Inventor： Jiakun Wang

IPC: H01L29/66

CPC classification number: H01L29/7827 ,  H01L29/4236 ,  H01L29/66666

Abstract: A trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) device is disclosed. The trench MOSFET device includes a substrate, a body region, a source region, a dielectric layer, a metal layer, a contact hole, and a trench structure. The substrate includes a substrate layer and an epitaxial layer formed on the substrate layer; the body region is formed in the epitaxial layer; and the source region is formed in the body region of the epitaxial layer. Further, the dielectric layer is formed on the epitaxial layer; the metal layer is formed on the dielectric layer; and the contact hole is formed in the dielectric layer to connect the source region with the metal layer. In addition, the trench structure is formed in the epitaxial layer, and the trench structure includes a first trench that is a pectinate trench including a plurality of tooth trenches and a bar trench interconnecting the plurality of tooth trenches.

Abstract translation: 公开了一种沟槽金属氧化物半导体场效应晶体管（MOSFET）器件。 沟槽MOSFET器件包括衬底，体区，源极区，电介质层，金属层，接触孔和沟槽结构。 衬底包括衬底层和形成在衬底层上的外延层; 在外延层中形成体区; 并且源区域形成在外延层的体区中。 此外，介电层形成在外延层上; 金属层形成在电介质层上; 并且在电介质层中形成接触孔以将源极区域与金属层连接。 此外，沟槽结构形成在外延层中，并且沟槽结构包括第一沟槽，其是包括多个齿槽的果胶沟槽和互连多个齿槽的条形沟槽。

公开(公告)号：US20130093008A1

公开(公告)日：2013-04-18

申请号：US13807612

申请日：2011-11-29

Applicant: Jiakun Wang

Inventor： Jiakun Wang

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7827 ,  H01L29/4236 ,  H01L29/66666

Abstract: A trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) device is disclosed. The trench MOSFET device includes a substrate, a body region, a source region, a dielectric layer, a metal layer, a contact hole, and a trench structure. The substrate includes a substrate layer and an epitaxial layer formed on the substrate layer; the body region is formed in the epitaxial layer; and the source region is formed in the body region of the epitaxial layer. Further, the dielectric layer is formed on the epitaxial layer; the metal layer is formed on the dielectric layer; and the contact hole is formed in the dielectric layer to connect the source region with the metal layer. In addition, the trench structure is formed in the epitaxial layer, and the trench structure includes a first trench that is a pectinate trench including a plurality of tooth trenches and a bar trench interconnecting the plurality of tooth trenches.

Abstract translation: 公开了一种沟槽金属氧化物半导体场效应晶体管（MOSFET）器件。 沟槽MOSFET器件包括衬底，体区，源极区，电介质层，金属层，接触孔和沟槽结构。 衬底包括衬底层和形成在衬底层上的外延层; 在外延层中形成体区; 并且源区域形成在外延层的体区中。 此外，介电层形成在外延层上; 金属层形成在电介质层上; 并且在电介质层中形成接触孔以将源极区域与金属层连接。 此外，沟槽结构形成在外延层中，并且沟槽结构包括第一沟槽，其是包括多个齿槽的果胶沟槽和互连多个齿槽的条形沟槽。